Abstract: The present invention provides a method for manufacturing a liquid crystal display device. In openings of a first light transmission type photosensitive resin formed on an insulating substrate, a gate electrode, a source line, and a pixel contact layer are prepared. On these components, a gate insulator, a semiconductor layer, an ohmic contact layer (n+ semiconductor layer) and a protective film are prepared. Further, in openings of a second light transmission type photosensitive resin, a source electrode, a drain electrode, and a pixel electrode are prepared. Also, the crossing portion connecting line formed at the opening of the second light transmission type photosensitive resin is, similarly to the source line or the gate line, made of baked silver produced by baking an ink containing silver fine particles plotted by ink jet process.

Abstract: The present invention provides a liquid crystal display device using a thin-film transistor, and the invention also provides a method for manufacturing the liquid crystal display device. In openings of a first light transmission type photosensitive resin formed on an insulating substrate, a gate electrode, a source line, and a pixel contact layer are prepared. On these components, a gate insulator, a semiconductor layer, an ohmic contact layer (n+ semiconductor layer) and a protective film are prepared. Further, in openings of a second light transmission type photosensitive resin, a source electrode, a drain electrode, and a pixel electrode are prepared. Also, the crossing portion connecting line formed at the opening of the second light transmission type photosensitive resin is, similarly to the source line or the gate line, made of baked silver produced by baking an ink containing silver fine particles plotted by ink jet process.

Abstract: The present invention provides a liquid crystal display device using a thin-film transistor, and the invention also provides a method for manufacturing the liquid crystal display device. In openings of a first light transmission type photosensitive resin formed on an insulating substrate, a gate electrode, a source line, and a pixel contact layer are prepared. On these components, a gate insulator, a semiconductor layer, an ohmic contact layer (n+ semiconductor layer) and a protective film are prepared. Further, in openings of a second light transmission type photosensitive resin, a source electrode, a drain electrode, and a pixel electrode are prepared. Also, the crossing portion connecting line formed at the opening of the second light transmission type photosensitive resin is, similarly to the source line or the gate line, made of baked silver produced by baking an ink containing silver fine particles plotted by ink jet process.

Abstract: The present invention provides a liquid crystal display device to be operated at high speed and with high precision by improving performance of a thin-film transistor without increasing cross capacity of gate lines and data lines. On an upper layer of a gate insulator GI at an intersection of gate lines GL and data lines DL to be prepared on an active matrix substrate SUB1, which makes up a liquid crystal display panel of a liquid crystal display device, an insulating material with low dielectric constant is dropped by ink jet coating method to prepare another insulator LDP in order to improve performance characteristics of the thin-film transistor to be prepared on a silicon semiconductor layer SI without increasing cross capacity on said intersection.

Abstract: The present invention provides a liquid crystal display device to be operated at high speed and with high precision by improving performance of a thin-film transistor without increasing cross capacity of gate lines and data lines. On an upper layer of a gate insulator GI at an intersection of gate lines GL and data lines DL to be prepared on an active matrix substrate SUB1, which makes up a liquid crystal display panel of a liquid crystal display device, an insulating material with low dielectric constant is dropped by ink jet coating method to prepare another insulator LDP in order to improve performance characteristics of the thin-film transistor to be prepared on a silicon semiconductor layer SI without increasing cross capacity on said intersection.

Abstract: The present invention provides a technique, by which it is possible to obtain a liquid crystal display panel with high precision by forming very fine pattern of electroconductive film through linking of the areas with different widths, and it is also possible to reduce the number of processes. Like a wide-width electroconductive film and a narrow-width electroconductive film, most of the surface of an underlying film UW of a thin-film transistor substrate SUB1 is turned to lyophobic portion RA, and only the narrow-width gate electrode forming area is turned to lyophilic portion FA. An electroconductive ink is dropped evenly to the gate electrode forming area of the lyophilic portion FA, and a wide-width gate line is formed on the gate line forming area GLA of lyophobic portion RA by direct drawing of IJ.

Abstract: The present invention provides a liquid crystal display device to be operated at high speed and with high precision by improving performance of a thin-film transistor without increasing cross capacity of gate lines and data lines. On an upper layer of a gate insulator GI at an intersection of gate lines GL and data lines DL to be prepared on an active matrix substrate SUB1, which makes up a liquid crystal display panel of a liquid crystal display device, an insulating material with low dielectric constant is dropped by ink jet coating method to prepare another insulator LDP in order to improve performance characteristics of the thin-film transistor to be prepared on a silicon semiconductor layer SI without increasing cross capacity on said intersection.

Abstract: A method of manufacturing an active matrix substrate includes forming wiring lines each having a matrix pattern on a substrate such that a wiring line extending in any one of a first direction and a second direction is separated from another wiring line at an intersection; forming a laminated portion composed of an insulating layer and a semiconductor layer on a portion of the wiring line and the intersection; and forming a conductive layer electrically connecting the separated wiring line, and a pixel electrode electrically connected to the wiring line via the semiconductor layer on the laminated portion.

Abstract: The present invention provides a technique, by which it is possible to obtain a liquid crystal display panel with high precision by forming very fine pattern of electroconductive film through linking of the areas with different widths, and it is also possible to reduce the number of processes. Like a wide-width electroconductive film and a narrow-width electroconductive film, most of the surface of an underlying film UW of a thin-film transistor substrate SUB1 is turned to lyophobic portion RA, and only the narrow-width gate electrode forming area is turned to lyophilic portion FA. An electroconductive ink is dropped evenly to the gate electrode forming area of the lyophilic portion FA, and a wide-width gate line is formed on the gate line forming area GLA of lyophobic portion RA by direct drawing of IJ.

Abstract: The present invention discloses a method for manufacturing a liquid crystal display panel and said liquid crystal display panel by simplifying the manufacturing process and by manufacturing the liquid crystal display panel at lower cost. The ink jet direct drawing method is introduced in the process or in several processes to manufacture a source electrode SD1 and a drain electrode SD2 including gate lines, gate electrodes and data lines of the liquid crystal display panel, and ink jet direct drawing process is used for the formation of an active layer island, which has a laminated layer comprising a silicon semiconductor layer SI and an n+ contact layer NS.

Abstract: The present invention provides a new technique, in which direct drawing of ink jet is used and a gap between a source electrode and a drain electrode is narrowed down to 4 ?m or less without increasing the number of processes. According to this technique, a conductive layer SD1A and a conductive layer SD2A arranged at opposed positions with a first gap are prepared by direct drawing of ink jet on upper layer of a silicon semiconductor layer SI by forming a source electrode SD1 and a drain electrode SD2 on a thin-film transistor, and by a laminating layer of the transparent conductive films SD1 and SD2 with a second gap, which is narrower than the first gap between the opposed ends of the conductive layers, to cover the upper layer of said first layer and the opposed ends of the conductive layers arranged at opposed positions.

Abstract: The present invention provides a liquid crystal display device to be operated at high speed and with high precision by improving performance of a thin-film transistor without increasing cross capacity of gate lines and data lines. On an upper layer of a gate insulator GI at an intersection of gate lines GL and data lines DL to be prepared on an active matrix substrate SUB1, which makes up a liquid crystal display panel of a liquid crystal display device, an insulating material with low dielectric constant is dropped by ink jet coating method to prepare another insulator LDP in order to improve performance characteristics of the thin-film transistor to be prepared on a silicon semiconductor layer SI without increasing cross capacity on said intersection.

Abstract: The object of the present invention is to provide an inspection apparatus for liquid crystal drive substrates that improves the inspection accuracy of liquid crystal drive substrates, judges defect type more accurately, and does not cause a decrease in throughput.

Abstract: The present invention provides a liquid crystal display device using a thin-film transistor, and the invention also provides a method for manufacturing the liquid crystal display device. In openings of a first light transmission type photosensitive resin formed on an insulating substrate, a gate electrode, a source line, and a pixel contact layer are prepared. On these components, a gate insulator, a semiconductor layer, an ohmic contact layer (n+ semiconductor layer) and a protective film are prepared. Further, in openings of a second light transmission type photosensitive resin, a source electrode, a drain electrode, and a pixel electrode are prepared. Also, the crossing portion connecting line formed at the opening of the second light transmission type photosensitive resin is, similarly to the source line or the gate line, made of baked silver produced by baking an ink containing silver fine particles plotted by ink jet process.

Abstract: The object of the present invention is to provide an inspection apparatus for liquid crystal drive substrates that improves the inspection accuracy of liquid crystal drive substrates, judges defect type more accurately, and does not cause a decrease in throughput.

Abstract: The object of the present invention is to provide an inspection apparatus for liquid crystal drive substrates that improves the inspection accuracy of liquid crystal drive substrates, judges defect type more accurately, and does not cause a decrease in throughput.

Abstract: The object of the present invention is to provide an inspection apparatus for liquid crystal drive substrates that improves the inspection accuracy of liquid crystal drive substrates, judges defect type more accurately, and does not cause a decrease in throughput.

Abstract: A method for preparing a graphite intercalation compound having a metal or a metal compound inserted between adjacent graphite layers, comprising simultaneously introducing a mixture of a vapor of both a hydrocarbon compound and an organo metallic compound together with a carrier gas into a reactor, and decomposing said hydrocarbon compound and said organo metallic compound on a single-crystalline substrate at a relatively low temperature.

Abstract: A thermoelectric material is provided which consists of an oxide with a perovskite structure, wherein the oxide is of the formula (Ln.sub.1-x A.sub.x).sub.2 MO.sub.4 with 0.01.ltoreq.x.ltoreq.0.05, where Ln is a rare earth element, A is an alkali earth metal element, and M is a transition metal element. The thermoelectric material is particularly useful for Peltier cooling elements to produce low temperatures below room temperature.

Abstract: The disclosure is directed to a method for converting between heat energy and electric energy which is characterized in that a carbon intercalation compound is employed as a thermoelectric material by utilizing a temperature difference in a direction perpendicular to the structure of carbon layers, or a method for producing a light-heat converting material which is characterized in that a thin metallic layer like a translucent mirror is caused to adhere to the inner surface of a light transmissive hollow tube by pyrolytically decomposing at a temperature approximately below 1000.degree. C., with hydrocarbons being introduced into the hollow tube at the rate of a predetermined amount per hour.