Patents by Inventor Yoshiki Hishiro
Yoshiki Hishiro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8956981Abstract: A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.Type: GrantFiled: October 2, 2013Date of Patent: February 17, 2015Assignee: Micron Technology, Inc.Inventors: Jon Daley, Yoshiki Hishiro
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Patent number: 8859195Abstract: A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.Type: GrantFiled: October 24, 2012Date of Patent: October 14, 2014Assignee: Micron Technology, Inc.Inventors: Yoshiki Hishiro, Scott Sills, Hiroyuki Mori, Troy Gugel, Paul D. Shirley, Lijing Gou, Adam Olson
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Publication number: 20140038425Abstract: A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.Type: ApplicationFiled: October 2, 2013Publication date: February 6, 2014Applicant: MICRON TECHNOLOGY, INC.Inventors: Jon Daley, Yoshiki Hishiro
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Patent number: 8552538Abstract: A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.Type: GrantFiled: February 16, 2010Date of Patent: October 8, 2013Assignee: Micron Technology, Inc.Inventors: Jon Daley, Yoshiki Hishiro
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Publication number: 20130059255Abstract: A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.Type: ApplicationFiled: October 24, 2012Publication date: March 7, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Yoshiki Hishiro, Scott Sills, Hiroyuki Mori, Troy Gugel, Paul D. Shirley, Lijing Gou, Adam Olson
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Patent number: 8309297Abstract: A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.Type: GrantFiled: October 5, 2007Date of Patent: November 13, 2012Assignee: Micron Technology, Inc.Inventors: Yoshiki Hishiro, Scott Sills, Hiroyuki Mori, Troy Gugel, Paul D. Shirley, Lijing Gou, Adam Olson
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Patent number: 8163468Abstract: Reducing or eliminating watermark-type defects during semiconductor device fabrication are described and can comprise treating photoresist using one of several embodiments. In some embodiments, the propensity for defect formation is reduced/eliminated by conditioning the photoresist surface through the application and removal of a sacrificial overcoat. In other embodiments, existing defects are reduced/eliminated by exposing the photoresist surface to a defect-stripping material during post-develop processing.Type: GrantFiled: March 10, 2008Date of Patent: April 24, 2012Assignee: Micron Technology, Inc.Inventors: Yoshiki Hishiro, Lijing Gou, Scott E. Sills, Hiroyuki Mori, Paul D. Shirley, Troy V. Gugel, Adam L. Olson
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Publication number: 20110042622Abstract: A reflow stabilizing solution for treating photoresist patterns and a reflow technology are disclosed. The reflow stabilizing solution comprises a polymer and is applied after the photoresist material has been developed and patterned. By treating the photoresist with the reflow stabilizing solution after resist patterning and further subjecting the reflow stabilizing solution to a heat treatment, the non-volatile polymer remains in between adjacent resist patterns and acts as a stopper to the reflowed photoresist. In this manner, the non-volatile polymer provides structural and mechanical support for the reflowed resist, preventing resist collapse at high temperatures and allowing the formation of reflowed resist structures having line width dimensions in the submicron range.Type: ApplicationFiled: November 2, 2010Publication date: February 24, 2011Inventor: Yoshiki Hishiro
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Patent number: 7846623Abstract: A reflow stabilizing solution for treating photoresist patterns and a reflow technology are disclosed. The reflow stabilizing solution comprises a polymer and is applied after the photoresist material has been developed and patterned. By treating the photoresist with the reflow stabilizing solution after resist patterning and further subjecting the reflow stabilizing solution to a heat treatment, the non-volatile polymer remains in between adjacent resist patterns and acts as a stopper to the reflowed photoresist. In this manner, the non-volatile polymer provides structural and mechanical support for the reflowed resist, preventing resist collapse at high temperatures and allowing the formation of reflowed resist structures having line width dimensions in the submicron range.Type: GrantFiled: April 10, 2008Date of Patent: December 7, 2010Assignee: Micron Technology, Inc.Inventor: Yoshiki Hishiro
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Publication number: 20100181656Abstract: A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.Type: ApplicationFiled: February 16, 2010Publication date: July 22, 2010Inventors: Jon Daley, Yoshiki Hishiro
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Patent number: 7687406Abstract: A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.Type: GrantFiled: July 17, 2006Date of Patent: March 30, 2010Assignee: Micron Technology, Inc.Inventors: Jon Daley, Yoshiki Hishiro
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Publication number: 20090226847Abstract: Reducing or eliminating watermark-type defects during semiconductor device fabrication are described and can comprise treating photoresist using one of several embodiments. In some embodiments, the propensity for defect formation is reduced/eliminated by conditioning the photoresist surface through the application and removal of a sacrificial overcoat. In other embodiments, existing defects are reduced/eliminated by exposing the photoresist surface to a defect-stripping material during post-develop processing.Type: ApplicationFiled: March 10, 2008Publication date: September 10, 2009Applicant: MICRON TECHNOLOGY, INC.Inventors: Yoshiki Hishiro, Lijing Gou, Scott E. Sills, Hiroyuki Mori, Paul D. Shirley, Troy V. Gugel, Adam L. Olson
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Patent number: 7538036Abstract: A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking layer. A second patterned photoresist is subsequently formed over the masking layer and utilized during a second etch into the masking layer. The combined first and second etches form openings extending entirely through the masking layer and thus form the masking layer into the patterned mask. The patterned mask can be utilized to form a pattern in a substrate underlying the mask. The pattern formed in the substrate can correspond to an array of capacitor container openings. Capacitor structure can be formed within the openings. The capacitor structures can be incorporated within a DRAM array.Type: GrantFiled: August 31, 2005Date of Patent: May 26, 2009Assignee: Micron Technology, Inc.Inventors: Brett W. Busch, Luan C. Tran, Ardavan Niroomand, Fred D. Fishburn, Yoshiki Hishiro, Ulrich C. Boettiger, Richard D. Holscher
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Publication number: 20090092933Abstract: A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.Type: ApplicationFiled: October 5, 2007Publication date: April 9, 2009Inventors: Yoshiki Hishiro, Scott Sills, Hiroyuki Mori, Troy Gugel, Paul D. Shirley, Lijing Gou, Adam Olson
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Publication number: 20080261125Abstract: A reflow stabilizing solution for treating photoresist patterns and a reflow technology are disclosed. The reflow stabilizing solution comprises a polymer and is applied after the photoresist material has been developed and patterned. By treating the photoresist with the reflow stabilizing solution after resist patterning and further subjecting the reflow stabilizing solution to a heat treatment, the non-volatile polymer remains in between adjacent resist patterns and acts as a stopper to the reflowed photoresist. In this manner, the non-volatile polymer provides structural and mechanical support for the reflowed resist, preventing resist collapse at high temperatures and allowing the formation of reflowed resist structures having line width dimensions in the submicron range.Type: ApplicationFiled: April 10, 2008Publication date: October 23, 2008Inventor: Yoshiki Hishiro
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Patent number: 7402379Abstract: A resist exposure system and a method of forming a pattern on a resist are provided and include an exposure source, a photoresist composition, and a mask positioned therebetween. The resist composition comprises a first photoresist X and a second photoresist Y. The first photoresist X absorbs at a higher wavelength than the second photoresist Y. The second photoresist Y has a lower glass transitional temperature than the first photoresist X.Type: GrantFiled: February 23, 2006Date of Patent: July 22, 2008Assignee: Micron Technology, Inc.Inventor: Yoshiki Hishiro
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Patent number: 7371509Abstract: A reflow stabilizing solution for treating photoresist patterns and a reflow technology are disclosed. The reflow stabilizing solution comprises a polymer and is applied after the photoresist material has been developed and patterned. By treating the photoresist with the reflow stabilizing solution after resist patterning and further subjecting the reflow stabilizing solution to a heat treatment, the non-volatile polymer remains in between adjacent resist patterns and acts as a stopper to the reflowed photoresist. In this manner, the non-volatile polymer provides structural and mechanical support for the reflowed resist, preventing resist collapse at high temperatures and allowing the formation of reflowed resist structures having line width dimensions in the submicron range.Type: GrantFiled: May 7, 2004Date of Patent: May 13, 2008Assignee: Micron Technology, Inc.Inventor: Yoshiki Hishiro
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Patent number: 7169545Abstract: A resist exposure system and a method of forming a pattern on a resist are provided and include an exposure source, a photoresist composition, and a mask positioned therebetween. The resist composition comprises a first photoresist X and a second photoresist Y. The first photoresist X absorbs at a higher wavelength than the second photoresist Y. The second photoresist Y has a lower glass transitional temperature than the first photoresist X.Type: GrantFiled: August 19, 2004Date of Patent: January 30, 2007Assignee: Micron Technology, Inc.Inventor: Yoshiki Hishiro
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Patent number: 7153778Abstract: A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking layer. A second patterned photoresist is subsequently formed over the masking layer and utilized during a second etch into the masking layer. The combined first and second etches form openings extending entirely through the masking layer and thus form the masking layer into the patterned mask. The patterned mask can be utilized to form a pattern in a substrate underlying the mask. The pattern formed in the substrate can correspond to an array of capacitor container openings. Capacitor structure can be formed within the openings. The capacitor structures can be incorporated within a DRAM array.Type: GrantFiled: February 20, 2004Date of Patent: December 26, 2006Assignee: Micron Technology, Inc.Inventors: Brett W. Busch, Luan C. Tran, Ardavan Niroomand, Fred D. Fishburn, Yoshiki Hishiro, Ulrich C. Boettiger, Richard D. Holscher
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Publication number: 20060257758Abstract: A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.Type: ApplicationFiled: July 17, 2006Publication date: November 16, 2006Inventors: Jon Daley, Yoshiki Hishiro