Abstract: A method for manufacturing a light-emitting element includes: forming a semiconductor structure comprising a light-emitting layer on a first surface of a substrate, wherein the first surface comprising a plurality of protrusions and a second region; dividing the semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region of the substrate, wherein the second region is exposed from under the semiconductor structure in the exposed region; bonding a light-transmitting body to a second surface of the substrate that is opposite the first surface so as to form a bonded body, wherein the light-transmitting body comprises a fluorescer; forming a plurality of modified regions along the exposed region; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

Abstract: A light emitting element includes: a first semiconductor layer; light emitting cells disposed on the first semiconductor layer, each including: an active layer, and a second semiconductor layer disposed on the active layer, wherein the light emitting cells include a first light emitting cell positioned in a center, and a plurality of second light emitting cells positioned around the first light emitting cell; a first insulation layer having a first opening provided above the first semiconductor layer located outward from the second light emitting cells and a plurality of second openings located above each second semiconductor layer; a first electrode disposed on the first insulation layer and electrically connected to the first semiconductor layer at the first opening; and a plurality of second electrodes, each positioned on and electrically connected to a respective one of the second semiconductor layers at a respective one of the second openings.

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

Abstract: A method for manufacturing a light-emitting element includes: forming a semiconductor structure comprising a light-emitting layer on a first surface of a substrate, wherein the first surface comprising a plurality of protrusions and a second region; dividing the semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region of the substrate, wherein the second region is exposed from under the semiconductor structure in the exposed region; bonding a light-transmitting body to a second surface of the substrate that is opposite the first surface so as to form a bonded body, wherein the light-transmitting body comprises a fluorescer; forming a plurality of modified regions along the exposed region; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

Abstract: A method for manufacturing a light-emitting element includes dividing a semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region, a first surface being exposed from under the semiconductor structure in the exposed region; etching protrusions formed in the exposed region; bonding a light-transmitting body to a second surface so as to form a bonded body; forming a plurality of modified regions along the exposed region inside the substrate by irradiating a laser beam on the exposed region from the first surface side; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

Abstract: A method of manufacturing a light emitting element includes: providing a first light emitting part and a second light emitting part, the first light emitting part comprising a first base member and a first semiconductor layered body, the second light emitting part comprising a second base member and a second semiconductor layered body; bonding the first and second light emitting parts to each other such that the first base member and the second base member are disposed between the first semiconductor layered body and the second semiconductor layered body; disposing a light reflecting member to cover the bonded first and second light emitting parts; removing a portion of the light reflecting member to expose surfaces of the first and second base members; and disposing a wavelength conversion member on the exposed surface of the first base member and the exposed surface of the second base member.

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

Abstract: A method of manufacturing a light emitting element includes: providing a first light emitting part and a second light emitting part, the first light emitting part comprising a first base member and a first semiconductor layered body, the second light emitting part comprising a second base member and a second semiconductor layered body; bonding the first and second light emitting parts to each other such that the first base member and the second base member are disposed between the first semiconductor layered body and the second semiconductor layered body; disposing a light reflecting member to cover the bonded first and second light emitting parts; removing a portion of the light reflecting member to expose surfaces of the first and second base members; and disposing a wavelength conversion member on the exposed surface of the first base member and the exposed surface of the second base member.

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer, wherein a resistance of a peripheral portion of the p-side nitride semiconductor layer is higher than a resistance of an area inside of the peripheral portion in a top view, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; and first protective layer located on an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer.

Abstract: A method for manufacturing a light-emitting element includes dividing a semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region, a first surface being exposed from under the semiconductor structure in the exposed region; etching protrusions formed in the exposed region; bonding a light-transmitting body to a second surface so as to form a bonded body; forming a plurality of modified regions along the exposed region inside the substrate by irradiating a laser beam on the exposed region from the first surface side; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

Abstract: A light-emitting device includes a light-emitting element having a top surface, a bottom surface opposite to the top surface, and side surfaces connecting the top surface and the bottom surface. An element electrode of the light-emitting element is located on the bottom surface. A phosphor layer is disposed above the top surface of the light-emitting element and having side surfaces. A reflective member covers side surfaces of the light-emitting element and side surfaces of the phosphor layer. A dielectric multilayer film is disposed on at least one of the side surfaces of the light-emitting element and disposed on at least one of the side surfaces of the phosphor layer and not located between the light emitting element and the phosphor layer. The dielectric multilayer film is not provided on an upper surface of the phosphor layer.

Abstract: A light emitting element includes: a light reflecting member including a first region and a second region; a first semiconductor layered body disposed between the first region and the second region and configured to emit first light having a first peak wavelength; a second semiconductor layered body disposed between the first semiconductor layered body and the second region and configured to emit second light having a second peak wavelength different from the first peak wavelength; a base member disposed between the first semiconductor layered body and the second semiconductor layered body; and a wavelength conversion member on which the first light and the second light is incident, the wavelength conversion member producing third light having a third peak wavelength different from the first peak wavelength and the second peak wavelength.

Abstract: The present invention provides spark plug that can improve detection accuracy of pre-ignition caused by flame kernel occurring inside spark plug. Terminal is located at a rear end side with respect to thread portion of metal shell. Detector electrode is provided at a portion located at a top end side with respect to a top end of contact portion between reduced diameter portion and shelf portion or packing in a space formed between outer periphery of insulator and inner periphery of the metal shell. The detector electrode and the terminal are connected by conductor. The detector electrode and the conductor are insulated from center electrode, the metal shell and ground electrode. Since the detector electrode is located in the space between the outer periphery of the insulator and the inner periphery of the metal shell, an early detection of the flame kernel occurring in this space can be possible.

Abstract: A light-emitting device includes a light-emitting element having a top surface, a bottom surface opposite to the top surface, and side surfaces connecting the top surface and the bottom surface. An element electrode of the light-emitting element is located on the bottom surface. A phosphor layer is disposed above the top surface of the light-emitting element and having side surfaces. A reflective member covers side surfaces of the light-emitting element and side surfaces of the phosphor layer. A dielectric multilayer film is disposed on at least one of the side surfaces of the light-emitting element and disposed on at least one of the side surfaces of the phosphor layer and not located between the light emitting element and the phosphor layer. The dielectric multilayer film is not provided on an upper surface of the phosphor layer.

Abstract: A light emitting device includes a light-transmissive member including a first surface, a second surface opposite to the first surface, and third surfaces connected to the first surface and the second surface. A phosphor layer faces the second surface of the light-transmissive member. A reflective member faces side surfaces of the phosphor layer and the third surfaces of the light-transmissive member. The light-emitting element has a top surface facing the phosphor layer, a bottom surface opposite to the top surface, and side surfaces connecting the top surface and the bottom surface. The phosphor layer has a bonding surface facing the light emitting element. A first dielectric multilayer film is arranged on at least one of side surfaces of the light-emitting element without being provided on the bonding surface of the phosphor layer.

Abstract: A light emitting element includes: a light reflecting member including a first region and a second region; a first semiconductor layered body disposed between the first region and the second region and configured to emit first light having a first peak wavelength; a second semiconductor layered body disposed between the first semiconductor layered body and the second region and configured to emit second light having a second peak wavelength different from the first peak wavelength; a base member disposed between the first semiconductor layered body and the second semiconductor layered body; and a wavelength conversion member on which the first light and the second light is incident, the wavelength conversion member producing third light having a third peak wavelength different from the first peak wavelength and the second peak wavelength.

Abstract: A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer containing an n-type impurity and located on the substrate, and a p-side nitride semiconductor layer containing a p-type impurity and located on the n-side nitride semiconductor layer, wherein a resistance of a peripheral portion of the p-side nitride semiconductor layer is higher than a resistance of an area inside of the peripheral portion in a top view, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; and first protective layer located on an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer.

Abstract: The present invention provides spark plug that can improve detection accuracy of pre-ignition caused by flame kernel occurring inside spark plug. Terminal is located at a rear end side with respect to thread portion of metal shell. Detector electrode is provided at a portion located at a top end side with respect to a top end of contact portion between reduced diameter portion and shelf portion or packing in a space formed between outer periphery of insulator and inner periphery of the metal shell. The detector electrode and the terminal are connected by conductor. The detector electrode and the conductor are insulated from center electrode, the metal shell and ground electrode. Since the detector electrode is located in the space between the outer periphery of the insulator and the inner periphery of the metal shell, an early detection of the flame kernel occurring in this space can be possible.