Abstract: A current control circuit controls a gate potential of a transistor to equalize a load current IL with a trapezoidal wave signal Sb. The trapezoidal wave signal Sb increases at a constant gradient when a drive command signal Sa turns into H level. Due to increase of load current IL, the transistor starts operating in a linear region and a gate voltage VGS abruptly increases. A saturation state detecting circuit turns a current saturation signal Sc into L level when the gate voltage VGS exceeds a reference voltage Vr. A trapezoidal wave generating circuit stops increase of trapezoidal wave signal Sb. When drive command signal Sa turns into L level, the trapezoidal wave signal Sb decreases at a constant gradient. The load current IL decreases according to reduction of trapezoidal wave signal Sb.

Abstract: A current control circuit controls a gate potential of a transistor to equalize a load current IL with a trapezoidal wave signal Sb. The trapezoidal wave signal Sb increases at a constant gradient when a drive command signal Sa turns into H level. Due to increase of load current IL, the transistor starts operating in a linear region and a gate voltage VGS abruptly increases. A saturation state detecting circuit turns a current saturation signal Sc into L level when the gate voltage VGS exceeds a reference voltage Vr. A trapezoidal wave generating circuit stops increase of trapezoidal wave signal Sb. When drive command signal Sa turns into L level, the trapezoidal wave signal Sb decreases at a constant gradient. The load current IL decreases according to reduction of trapezoidal wave signal Sb.

Abstract: A semiconductor device for a load drive circuit includes a main LDMOS device and a sense LDMOS device that are connected to each other in parallel to form a current mirror circuit. The main LDMOS device and the sense LDMOS device have plural drain cells and plural source cells that are arranged to form a generally square shape as a whole. In the plural drain cells, drain cells of the sense LDMOS device are arranged along a diagonal of the generally square shape.

Abstract: The present invention provides a spike, which includes a base (2), a claw (4) formed on a tip end of the base (2) and having a trapezoidal tip end portion, and a recess (6) formed in a rear side of the base (2) and extending from the claw (4) to the base (2), the recess (6) being curved relative to a longitudinal direction (7) of the spike (1).

Abstract: A semiconductor device for a load drive circuit includes a main LDMOS device and a sense LDMOS device that are connected to each other in parallel to form a current mirror circuit. The main LDMOS device and the sense LDMOS device have plural drain cells and plural source cells that are arranged to form a generally square shape as a whole. In the plural drain cells, drain cells of the sense LDMOS device are arranged along a diagonal of the generally square shape.

Abstract: An apparatus for driving an electric load includes a switch device interposed in a current feed path from a direct-current power source to the electric load. A sensing resistor connected in series with the switch device operates for detecting a load current as a voltage value. The load current flows into the electric load via the switch device. A signal generation device operates for generating a trapezoidal wave signal in response to externally applied commands to turn on and turn off the electric load. The trapezoidal wave signal gradually varies from a first predetermined voltage to a second predetermined voltage when the electric load starts to be turned on. The trapezoidal wave signal gradually varies from the second predetermined voltage to the first predetermined voltage when the electric load starts to be turned off.