Abstract: A watch is provided that includes a constant current circuit including: a plurality of transistors coupled in series between a first power supply and a second power supply, the first power supply being a power supply of a high potential side power supply, the second power supply being a power supply of a low potential side power supply; a plurality of connection wiring lines each provided for each of the plurality of transistors, and configured to couple the first power supply and a terminal on the first power supply side of each of the plurality of transistors; a non-disconnected fuse provided in a non-disconnected state to one connection wiring line of the plurality of connection wiring lines, and a disconnected fuse provided in a disconnected state to a connection wiring line other than the one connection wiring line of the plurality of connection wiring lines.

Abstract: A watch is provided that includes a constant current circuit including: a plurality of transistors coupled in series between a first power supply and a second power supply, the first power supply being a power supply of a high potential side power supply, the second power supply being a power supply of a low potential side power supply; a plurality of connection wiring lines each provided for each of the plurality of transistors, and configured to couple the first power supply and a terminal on the first power supply side of each of the plurality of transistors; a non-disconnected fuse provided in a non-disconnected state to one connection wiring line of the plurality of connection wiring lines, and a disconnected fuse provided in a disconnected state to a connection wiring line other than the one connection wiring line of the plurality of connection wiring lines.

Abstract: In an N-channel depletion type first transistor, a gate is connected to a reference node and a drain is connected to a current output node. In a P-channel enhancement type second transistor, a gate and a drain are connected to the reference node and a source is connected to a source of the N-channel depletion type first transistor.

Abstract: An integrated circuit includes first and second coils, a first pad connected to the first coil and to a resonator, a second pad connected to the second coil and to the resonator, and first and second output terminals. The first pad is arranged to provide signals between the resonator and the first coil. The second pad is arranged to provide signals between the resonator and the second coil. A distance between the first pad and the first coil is less than a distance between the first coil and the first output terminal and a distance between the first coil and the second output terminal. A distance between the second pad and the second coil is less than a distance between the second coil and the first output terminal and a distance between the second coil and the second output terminal.

Abstract: In an N-channel depletion type first transistor, a gate is connected to a reference node and a drain is connected to a current output node. In a P-channel enhancement type second transistor, a gate and a drain are connected to the reference node and a source is connected to a source of the N-channel depletion type first transistor.

Abstract: An integrated circuit includes first and second coils, a first pad connected to the first coil and to a resonator, a second pad connected to the second coil and to the resonator, and first and second output terminals. The first pad is arranged to provide signals between the resonator and the first coil. The second pad is arranged to provide signals between the resonator and the second coil. A distance between the first pad and the first coil is less than a distance between the first coil and the first output terminal and a distance between the first coil and the second output terminal. A distance between the second pad and the second coil is less than a distance between the second coil and the first output terminal and a distance between the second coil and the second output terminal.

Abstract: An oscillation module includes an oscillation circuit which includes a first coil and a second coil and a filter circuit which is provided at a stage subsequent to the oscillation circuit and includes a third coil. The first coil, the second coil, and the third coil are a part of an integrated circuit. The third coil is arranged so as to intersect a virtual straight line equidistant from the center of the first coil and the center of the second coil, in a plan view of the integrated circuit.

Abstract: An oscillation module includes: an oscillation circuit which includes a first coil and a second coil; and a filter circuit which is provided at a stage subsequent to the oscillation circuit and includes a third coil, in which the first coil, the second coil, and third coil are a part of an integrated circuit, and the third coil is arranged so as to intersect a virtual straight line equidistant from the center of the first coil and the center of the second coil, in a plan view of the integrated circuit.

Abstract: A semiconductor circuit includes an oscillation circuit; an output circuit that receives a first oscillation signal from the oscillation circuit and outputs a second oscillation signal; a DC circuit that receives a voltage based on a power supply voltage and outputs at least one of a DC voltage and a DC current; and a semiconductor substrate on which the oscillation circuit, the output circuit, and the DC circuit are formed. In a plan view of the semiconductor substrate, the DC circuit is disposed between the oscillation circuit and the output circuit.

Abstract: A semiconductor circuit includes an oscillation circuit; an output circuit that receives a first oscillation signal from the oscillation circuit and outputs a second oscillation signal; a DC circuit that receives a voltage based on a power supply voltage and outputs at least one of a DC voltage and a DC current; and a semiconductor substrate on which the oscillation circuit, the output circuit, and the DC circuit are formed. In a plan view of the semiconductor substrate, the DC circuit is disposed between the oscillation circuit and the output circuit.

Abstract: An oscillator circuit includes an oscillating amplifier circuit to which an oscillator element is connected, and which generates an oscillation signal, and a plurality of MOS type variable capacitance elements each having two terminals, one of which is electrically connected to the oscillating amplifier circuit, the MOS type variable capacitance elements have respective threshold voltages different from each other, a control voltage is applied to one of the terminals of each of the MOS type variable capacitance elements, and a reference voltage is applied to the other of the terminals of each of the MOS type variable capacitance elements. It is also possible for the MOS type variable capacitance elements to be different from each other in dope amount of impurities to a semiconductor layer below a gate electrode.

Abstract: A constant-voltage generation circuit 100 creates a constant voltage. This constant-voltage generation circuit 100 comprises a first voltage creation circuit 110 for creating a reference voltage and a second voltage creation circuit 130 for creating the constant voltage which has a predetermined relationship with the reference voltage. The first voltage creation circuit 110 comprises a first constant-current source 150-1 for supplying a constant current and a first voltage-control transistor 112, through which this constant current flows, for outputting the reference voltage on the basis of a predetermined potential. The constant current is set to a value within the saturated operating region of the first voltage control transistor 112.

Abstract: An oscillation circuit including a first electrostatic protection circuit connected between a signal path of the oscillation circuit and a constant-voltage side, and bypassing an electrostatic voltage of a first polarity that intrudes into the signal path to a side of a constant bypass voltage through a first semiconductor rectifier element. A second electrostatic protection circuit is connected between the signal path and a reference potential side, and bypassing an electrostatic voltage of a second polarity that intrudes into the signal path to the reference potential side through a second semiconductor rectifier element. The constant bypass voltage is set to a value such that the first and second semiconductor rectifier elements are not turned on by voltage change in the signal path caused by a leakage current, even when a leakage current is generated between the signal path and a power-supply voltage line.

Abstract: This invention relates to a crystal oscillation circuit that oscillates stably with a low power consumption. This crystal oscillation circuit comprises an inverting amplifier, a crystal oscillator, and a feedback circuit that inverts the phase of an output from this inverting amplifier and feeds it back as an input. The sum of the absolute value of the threshold voltage of a first semiconductor switching element and the absolute value of the threshold voltage of a second semiconductor switching element is set to be greater than or equal to the absolute value of the potential difference between first and second potentials, when said inverting amplifier includes the first and second semiconductor switching elements.

Abstract: A constant-voltage generation circuit 100 creates a constant voltage. This constant-voltage generation circuit 100 comprises a first voltage creation circuit 110 for creating a reference voltage and a second voltage creation circuit 130 for creating the constant voltage which has a predetermined relationship with the reference voltage. The first voltage creation circuit 110 comprises a first constant-current source 150-1 for supplying a constant current and a first voltage-control transistor 112, through which this constant current flows, for outputting the reference voltage on the basis of a predetermined potential. The constant current is set to a value within the saturated operating region of the first voltage control transistor 112.

Abstract: There is provided an oscillation circuit that enables oscillation at a stable frequency, unaffected by changes in the power-supply voltage of a main power source.

Abstract: A constant-voltage generation circuit 100 creates a constant voltage.

Abstract: A constant-voltage generation circuit 100 creates a constant voltage.

Abstract: A constant-voltage generation circuit is provided which creates a constant voltage. The constant-voltage generation circuit may consist of a first voltage creation circuit for creating a reference voltage and a second voltage creation circuit for creating a constant voltage which has a predetermined relationship with the reference voltage. The first voltage creation circuit may consist of a constant-current source for supplying a constant current and a voltage-control transistor through which this constant current flows, for outputting the reference voltage on the basis of a predetermined potential. The constant current is set to a value within the saturated operating region of the voltage-control transistor.

Abstract: This invention relates to a crystal oscillation circuit that oscillates stably with a low power consumption. This crystal oscillation circuit comprises an inverting amplifier, a crystal oscillator, and a feedback circuit that inverts the phase of an output from this inverting amplifier and feeds it back as an input. The sum of the absolute value of the threshold voltage of a first semiconductor switching element and the absolute value of the threshold voltage of a second semiconductor switching element is set to be greater than or equal to the absolute value of the potential difference between first and second potentials, when said inverting amplifier includes the first and second semiconductor switching elements.