Abstract: To expose the peripheral area of a film with high precision while the film is being transported, even if the peripheral area of the film has an arch or a fold, the edge of a copper foil on a TAB strip is determined by way of an optical detector which includes a light projection section and a light receiving section. The sliding base and the projection lens unit are moved such that the amount of light received by the light receiving part is constant. Ultraviolet light is concentrated on the peripheral area of the copper foil of the TAB strip, by which the peripheral area is exposed. The projection lens unit is provided with a nozzle from which air is blown onto the area of the TAB strip which is undergoing peripheral area exposure. This area is pressed by the pressure of the air against the surface of the carrier so that the peripheral area of the TAB strip can be made planar even if the strip has an arch or a fold.

Abstract: A resist curing device including a workpiece stage with a plate adapted to support a silicon wafer laid thereupon, a workpiece retention device that vacuum adsorbs the silicon wafer laid upon the plate, a light source unit that provides ultraviolet irradiation to cure resist applied to the silicon wafer, and a workpiece temperature control device that heats and/or cools the silicon wafer supported on the plate, where the plate has an expansion coefficient substantially similar to that of the silicon wafer.

Abstract: To enable uniform heating of the wafer and to carry out heating of the guard ring with high efficiency using lamps of a light source part formed of wafer heating lamps and guard ring heating lamps, the distance between the guard ring heating lamps and the guard ring is made larger than the distance between the wafer heating lamps and the wafer. A side wall is formed with a mirror surface is located between the lamps for wafer heating and the lamps for heating the guard ring by which the light which was emitted from the guard ring heating lamps in the direction toward the wafer are reflected toward the guard ring. Furthermore, at the outer periphery of the guard ring heating lamps, a second side wall is formed which is used as a reflection surface. In addition, at the outer periphery of the guard ring, there is a second mirror by which the light emitted outward of the guard ring is focused back onto the guard ring.

Abstract: A process for curing of a resist in which the consumption of the device is not increased and a device for carrying out the process is achieved following manner. The workpiece stage is divided into several stages which are smaller than the size of the workpiece. The areas formed by division are each controlled to different constant temperatures. First, the part of the workpiece to which a resist has been applied and which has been developed is seated on a stage of the workpiece stage by a workpiece transport means. The resist-applied part of the workpiece is irradiated with UV radiation from a light irradiation part while it is being heated. Then, the workpiece is moved by the workpiece transport means such that the workpiece which was located on the above described stage is transported onto another stage and the other part of the workpiece is transported onto the stage named first. UV radiation is emitted from the light irradiation part.

Abstract: To enable uniform heating of the wafer and to carry out heating of the guard ring with high efficiency using lamps of a light source part formed of wafer heating lamps and guard ring heating lamps, the distance between the guard ring heating lamps and the guard ring is made larger than the distance between the wafer heating lamps and the wafer. A side wall is formed with a mirror surface is located between the lamps for wafer heating and the lamps for heating the guard ring by which the light which was emitted from the guard ring heating lamps in the direction toward the wafer are reflected toward the guard ring. Furthermore, at the outer periphery of the guard ring heating lamps, a second side wall is formed which is used as a reflection surface. In addition, at the outer periphery of the guard ring, there is a second mirror by which the light emitted outward of the guard ring is focused back onto the guard ring.

Abstract: To expose the peripheral area of a film with high precision while the film is being transported, even if the peripheral area of the film has an arch or a fold, the edge of a copper foil on a TAB strip is determined by way of an optical detector which includes a light projection section and a light receiving section. The sliding base and the projection lens unit are moved such that the amount of light received by the light receiving part is constant. Ultraviolet light is concentrated on the peripheral area of the copper foil of the TAB strip, by which the peripheral area is exposed. The projection lens unit is provided with a nozzle from which air is blown onto the area of the TAB strip which is undergoing peripheral area exposure. This area is pressed by the pressure of the air against the surface of the carrier so that the peripheral area of the TAB strip can be made planar even if the strip has an arch or a fold.

Abstract: A heat treatment device of the light irradiation type with a long service life, in which effective, adequate cooling of the lamps (10) prevents devitrification of the lamp emission portion, even if the power supplied to the lamps is increased to accelerate the temperature increase of the wafer, is achieved by the provision of air injection lines (14) in a mirror (11), in which the lamps are mounted, for blowing in air into the vicinity of the lamps (10), and at least one air exhaust line (23) for evacuation of air from the vicinity of the lamps (10).

Abstract: A process for determination of blackening of a lamp in which the blackening of a lamp can be determined without visual inspection in real time or during operation is achieved by the spectral radiant energy which is emitted by the lamp bulb being measured and evaluated based on the difference that exists between when blackening occurs as compared to when blackening does not occur. Therefore, blackening of a lamp can be determined by determining the change of the spectral radiant energy emitted by the bulb. Furthermore, in a lamp in which the bulb temperature changes, the spectral radiant energy emitted by the bulb can be measured at two different wavelengths and blackening of the lamp can be determined based on the change of the ratio relative to each other.

Abstract: A device for exposure of the peripheral area of a wafer with a small shape and at low costs in which, using a device for stepped exposure of the peripheral area of a wafer, the peripheral area of a wafer can be exposed in a ring shape. A wafer to which resist has been applied is placed on a rotary support and rotated once. The seated state of the wafer and a singular orienting shape such as an Ori-Fla or the like are determined. Based on this information, the wafer is positioned in a given position. Then, the rotary support is moved by means of an X-Y support and exposure is performed. If the coordinates of the center of rotation (X.THETA., Y.THETA.) are taken accurately a ring shape is approached in practice (if, for example, .THETA.=0.1.degree. and for a polygon with 3600 corners a circle is approached), there is no problem. Two exposure devices are not necessary, specifically one device for stepped exposure of the peripheral area of a wafer and one device for ring-shaped exposure of the peripheral area.

Abstract: A process for exposing the peripheral area of a wafer and a device for executing the process is provided to enable both step-shaped exposure and also ring-shaped exposure of part of the peripheral area of a wafer using a single arrangement. The device includes a rotary carrier for receiving a wafer having resist thereon, which is moved and rotated based on the position of the wafer on the carrier, the position of a singular point formed on an edge of the wafer, such as an "ori-fla" and the like, and furthermore alignment mark position information, to position the wafer in a stipulated position. Then, using an X-Y carrier, the rotary carrier is moved as exposure light is radiated from a first exit part to expose some of the peripheral area of the wafer in a step shape. Next, the rotary carrier is moved again and rotated, and exposure light emitted from a second exit part to expose a not yet exposed part of the peripheral area of the wafer in a ring-shape.

Abstract: To effect exposure of the peripheral area of a wafer to remove an unnecessary resist with a step shape in a development process with high precision and ease, even if the position has errors, in which a circuit pattern is formed on a semiconductor wafer in a preceding process, according to the invention, before exposing the unnecessary resist on a wafer outside of the area on which a pattern is formed, the position of a singular shaped area, such as an "orientation flat" or the like is determined by a unit for determining the peripheral edge area of the wafer, and the rotating carrier is driven and the wafer is rotated until the singular shaped area is positioned in a predetermined position. Furthermore, according to the invention, a unit for determining the alignment marks computes and stores the positions of predetermined alignment marks, by which positional errors in the location in which the circuit pattern is formed are corrected.

Abstract: Ultraviolet radiation process applies to manufacture semiconductor devices in order to enhance the thermal stability of the developed positive photoresist film on semiconductor wafers.A method, in ultraviolet radiation process, and an apparatus enabling the high-speed and effective treatment of the positive photoresist empolying ultraviolet irradiation by preventing the deformation of the developed positive photoresist image which is caused by the light radiated from a discharge lamp such as high pressure mercury vapor lamp. These method and apparatus employ ultraviolet irradiation, in which ultraviolet rays are applied to the developed positive photoresist image, placed in a chamber filled with gas of lower pressure than 1 atmospheric pressure using a means to intercept or reduce selectively all or part of the wavelengths in the spectral response region of the positive photoresist out of radiant lights obtained from the discharge lamp.

Abstract: Ultraviolet radiation process applies to manufacture to semiconductor devices in order to enhance the thermal stability of the developed positive photoresist film on semiconductor's wafers.A method, in ultraviolet radiation process, and an apparatus enabling the high-speed and effective treatmnent of the positive photoresist employing ultraviolet irradiation by preventing the deformation of the positive photoresist which is caused by the light radiated form the microwave-excited electrodeless discharge lamp. These method and apparatus employ ultraviolet irradiation, in which ultraviolet rays are applied to the developed positive photoresist image placed under lower or pressure than 1 atmospheric pressure, using a means to intercept or reduce selectively all or part of the wavelengths in the spectral response region of the positive photoresist out of radiant lights obtained from the microwave-excited electrodeless discharge lamp.

Abstract: Ultraviolet radiation process applied to manufacture semiconductor devices in order to enhance the thermal stability of the photoresist film on semiconductor wafers.A method, in ultraviolet radiation process, enabling effective treatment of the developed positive photoresist image employing ultraviolet irradiation by preventing the deformation of the developed positive photoresist image which is caused by exposing it to high ultraviolet radiation at the beginning of exposure. This method employs ultraviolet irradiation, in which the developed positive photoresist image placed in gas of a lower atmospheric pressure is exposed to ultraviolet radiation of low intensity at the beginning of exposure, and then exposed to ultraviolet radiation, the intensity of which increases little by little or in steps.

Abstract: Ultraviolet radiation process applicable in the manufacture of semiconductor devices to enhance the thermal stability of a photoresist film on a semiconductor wafer.A method, in ultraviolet radiation process, and an apparatus enabling the high-speed and effective treatment of a photoresist pattern employing ultraviolet irradiation by preventing the deformation of the photoresist which is caused by the light radiated from a discharge lamp such as high pressure mercury vapor lamp. This method and apparatus employ ultraviolet irradiation, in which ultraviolet rays are applied to the photoresist pattern, using a means to intercept or reduce selectively all or part of the wavelengths in the spectral response region of the photoresist out of radiant energy obtained from the discharge lamp.

Abstract: A method for heating a semiconductor wafer having a first region to be heated and a second region requiring no heating thereof, which method comprises forming a film over at least one of the first and second regions so as to make the reflectivity of the surface of the first region smaller than the reflectivity of the surface of the second region, and then exposing the semiconductor wafer to a flash of light to heat same. The above method permits selectively heating the region which is required to be heated, and, at the same time, to avoid any overheating of the region where no heating is required. The above heating method is particularly effective for annealing a semiconductor wafer which has a large surface area.

Abstract: A flashlight-radiant apparatus is constructed of a housing defining an object-handling space and an irradiation space located adjacent to the object-handling space, a plurality of flash discharge lamps provided side by side in an upper part of the irradiation space, a gas-discharging member provided in the upper part of the irradiation space for controlling the atmosphere of the housing, and an object-supporting table movable reciprocally between the object-handling space and the irradiation space in the housing and equipped with built-in subsidiary heating. An object, for example, a silicon wafer is preheated on the object-supporting table while the object-supporting table is located in the object-handling space. The flashlight-radiant apparatus has a simple structure, enjoys a high level of handling safety, assures long service life for its flash discharge lamps, and is suitable particularly for annealing semiconductor wafers.

Abstract: Disclosed herein are a heater assembly and a method for heat-treating a semiconductor wafer using the same. The heater assembly is formed of a heating device having a ring-shaped portion and a holder combined with the heating device detachably each other. A wafer material such as a semiconductor wafer is held on the holder of the heater assembly. A heat-treatment is effected by heating the wafer material by means of application of light radiated from a light source, which is formed of one or more lamps, while heating or after having heated the circumferential portion of the wafer by the heating device of the heater assembly. Owing to the subsidiary heating of the circumferential portion, the wafer may be heat-treated at substantially the same temperature in its entirety. Thus, the heat-treatment does not develop such large "warping" impairing subsequent treatment and/or treatment of the wafer or "slip lines". The heater assembly may be used successfully and conveniently in effecting uniform heating.

Abstract: A method for heating a semiconductor wafer which may have a first region to be heated and a second region requiring no heating thereof, which method comprises forming a film on a surface of the semiconductor wafer so as to make the reflectivity of the whole surface of the wafer uniform, and then exposing the semiconductor wafer to a flash of light to heat same. The above method permits to heat the whole surface of the wafer at a uniform temperature thereby heating a region of the wafer which is required to be heated, and, at the same time, avoiding any overheating of another region of the wafer where no heating is required. The above heating method is effective for annealing a semiconductor wafer which has large surface area.

Abstract: A light-radiant heating furnace is formed of a multiplane light source constructed by arranging in combination a plurality of plane light source units, each of which is constructed of a plurality of lamps arranged side by side, along a vertically-extending axis in such a manner that the plane light source units surround a heating space. Each of the lamps includes an elongated and sealed tubular envelope and a filament, which has alternately non-luminous portions and luminous portions, and is disposed in such a manner that it extends in a direction perpendicular to the vertically-extending axis. It is preferred to use frame members each of which has two plate portions extending at a predetermined angle relative to each other and defining lamp-supporting holes at different levels. The light-radiant heating furnace can heat an object either uniformly or with a desired temperature distribution to a desired high temperature. Its structure is extremely simple and its assembly is thus easy.