Abstract: A camera can perform two different photographing operations with a lens at different positions without vignetting while preventing entry of light and dust. A camera includes a frame including a film compartment to contain a photographic film and a barrel extending from the film compartment in an optical axis direction, and a lens barrel movable in the barrel in X-direction. The lens barrel includes cylinders movable frontward relative to the barrel, and a cylinder movable frontward relative to the cylinder. The camera includes a rear bellows connecting the frame and the cylinder, and a front bellows connecting the cylinder and the cylinder. In a first photographing state in which the cylinders extend frontward relative to the barrel and the cylinder is accommodated inside the cylinder, the rear bellows is expanded and the front bellows is partially contracted. In a second photographing state, the cylinder extends frontward relative to the cylinder.

Abstract: A camera can perform two different photographing operations with a lens at different positions without vignetting while preventing entry of light and dust. A camera includes a frame including a film compartment to contain a photographic film and a barrel extending from the film compartment in an optical axis direction, and a lens barrel movable in the barrel in X-direction. The lens barrel includes cylinders movable frontward relative to the barrel, and a cylinder movable frontward relative to the cylinder. The camera includes a rear bellows connecting the frame and the cylinder, and a front bellows connecting the cylinder and the cylinder. In a first photographing state in which the cylinders extend frontward relative to the barrel and the cylinder is accommodated inside the cylinder, the rear bellows is expanded and the front bellows is partially contracted. In a second photographing state, the cylinder extends frontward relative to the cylinder.

Abstract: A camera can perform two different photographing operations with a lens at different positions without vignetting while preventing entry of light and dust. A camera includes a frame including a film compartment to contain a photographic film and a barrel extending from the film compartment in an optical axis direction, and a lens barrel movable in the barrel in X-direction. The lens barrel includes cylinders movable frontward relative to the barrel, and a cylinder movable frontward relative to the cylinder. The camera includes a rear bellows connecting the frame and the cylinder, and a front bellows connecting the cylinder and the cylinder. In a first photographing state in which the cylinders extend frontward relative to the barrel and the cylinder is accommodated inside the cylinder, the rear bellows is expanded and the front bellows is partially contracted. In a second photographing state, the cylinder extends frontward relative to the cylinder.

Abstract: A semiconductor laser device includes a first cavity facet formed on an end of the semiconductor element layer on a light-emitting side of a region including the light emitting layer, a first insulating film, made of AlN, formed on a surface of the first cavity facet and a second insulating film, made of AlOXNY (0?X<1.5, 0?Y?1), formed on a surface on an opposite side of the first insulating film to the first cavity facet. A first interface between the first insulating film and the second insulating film has a first recess portion and a first projection portion.

Abstract: An electrostatic generator includes a substrate, an electrode formed on or in a surface of the substrate, an electret film provided so as to be opposed to the electrode and an insulating film on an electrode side formed on a surface of the electrode on a side opposed to the electret film.

Abstract: This nitride-based semiconductor laser element includes a semiconductor element layer made of a nitride-based semiconductor having an emitting-side cavity facet and a reflecting-side cavity facet, and a facet coating film formed on the emitting-side cavity facet. The facet coating film has a first dielectric film made of aluminum nitride formed in contact with the emitting-side cavity facet, a second dielectric film made of aluminum oxynitride formed on a side of the first dielectric film opposite to the emitting-side cavity facet, a third dielectric film made of aluminum oxide formed on a side of the second dielectric film opposite to the first dielectric film, a fourth dielectric film made of aluminum oxynitride formed on a side of the third dielectric film opposite to the second dielectric film, and a fifth dielectric film made of aluminum oxide formed on a side of the fourth dielectric film opposite to the third dielectric film.

Abstract: An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section (20) having a movable electrode (22), a fixed electrode section (10) having an electret film (12) opposed to the movable section (20) at a predetermined distance and capable of storing charge and a conductive layer (14) formed on a predetermined region on the upper surface of the electret film (12), and an insulating film (13) interposed between the electret film (12) and the conductive layer (14).

Abstract: An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section (20) having a movable electrode (22) and a fixed electrode section (10) having an electret film (12) opposed to the movable electrode section (20) at a predetermined distance and capable of storing charge and a conductive layer (13) formed on a predetermined region on the upper surface of the electret film (12). The conductive layer (13) is formed on the surface of a region of the electret film (12), and the region is projected.

Abstract: A semiconductor laser device capable of improving the reliability of the laser device is obtained. This semiconductor laser device (1000) includes a semiconductor element layer (20) having a light emitting layer (25), a first cavity facet (1) formed on an end portion on a light emitting side of a region of the semiconductor element layer including the light emitting layer, a first insulating film (40) in which a first nitride film (41), a first intermediate film including a first oxide film (42) and a second nitride film (43) are formed on the first cavity facet in this order from the side of the first cavity facet and a second insulating film (51), formed on the first insulating film, including a second oxide film (51).

Abstract: This electrostatic actuator includes an electret film and a conductor layer formed on the electret film, and the conductor layer is so formed as to have a sectional shape reduced in width upward from the side closer to the electret film.

Abstract: In a flareless-type pipe joint, a pressing surface, which presses a rear end portion of a ferrule in the axial direction and toward the inner periphery of the ferrule, is formed in a joint body or a coupling member in which a cam surface is not formed. The ferrule has a groove that extends radially outward from the inner periphery. By pressing the rear end portion in the axial direction and toward the inner periphery by the pressing surface, the distal portion of the ferrule is pressed against the cam surface and an edge portion of the distal portion is deformed to bite into a pipe. An edge portion of a rear end portion of the inner peripheral surface of the ferrule is deformed to bite into the pipe.

Abstract: An electret device includes an electret film into which charges are injected and a barrier film provided on a surface of the electret film and having an electron affinity smaller than the electron affinity of the electret film.

Abstract: A memory capable of suppressing reduction of data determination accuracy is provided. This memory includes a memory cell connected to a bit line for holding data and a bipolar transistor whose base is connected to the bit line. In data reading, the memory reads the data by amplifying a current, corresponding to the data of the memory cell, appearing on the bit line with the bipolar transistor.

Abstract: This semiconductor laser device includes a semiconductor element layer having an active layer and a cavity facet and a facet coating film arranged on the cavity facet, while the facet coating film includes an oxide film made of hafnium silicate (HfSiO) or hafnium aluminate (HfAlO), and the facet coating film further has a nitrogen-containing film, in contact with the cavity facet, between the cavity facet and the oxide film.

Abstract: An electret device includes an electret film capable of storing charges and a protective film formed so as to substantially surround a side end surface of the electret film.

Abstract: An electret device includes an electret film capable of storing charges and a charge outflow inhibition film formed on an upper surface of a region having a high charge density in the electret film and inhibiting the charges stored in the electret film from flowing out.

Abstract: A semiconductor laser device capable of improving the reliability of the laser device is obtained. This semiconductor laser device (1000) includes a semiconductor element layer (20) having a light emitting layer (25), a first cavity facet (1) formed on an end portion on a light emitting side of a region of the semiconductor element layer including the light emitting layer, a first insulating film (40) in which a first nitride film (41), a first intermediate film including a first oxide film (42) and a second nitride film (43) are formed on the first cavity facet in this order from the side of the first cavity facet and a second insulating film (51), formed on the first insulating film, including a second oxide film (51).

Abstract: A semiconductor laser device includes a first cavity facet formed on an end of the semiconductor element layer on a light-emitting side of a region including the light emitting layer, a first insulating film, made of AlN, formed on a surface of the first cavity facet and a second insulating film, made of AlOXNY (0?X<1.5, 0<Y?1), formed on a surface on an opposite side of the first insulating film to the first cavity facet. A first interface between the first insulating film and the second insulating film has a first recess portion and a first projection portion.

Abstract: An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section (20) having a movable electrode (22), a fixed electrode section (10) having an electret film (12) opposed to the movable section (20) at a predetermined distance and capable of storing charge and a conductive layer (14) formed on a predetermined region on the upper surface of the electret film (12), and an insulating film (13) interposed between the electret film (12) and the conductive layer (14).

Abstract: In a flareless-type pipe joint, a pressing surface 25, which presses a rear end portion of a ferrule 3 in the axial direction and toward the inner periphery of the ferrule 3, is formed in a joint body 1 or a coupling member 2 in which a cam surface 19 is not formed. The ferrule 3 has a groove 36 that extends radially outward from the inner periphery. By pressing the rear end portion in the axial direction and toward the inner periphery by means of the pressing surface 25, the distal portion of the ferrule 3 is pressed against the cam surface 19 and an edge portion 3b of the distal portion is deformed to bite into a pipe p. Further, an edge portion 3c of a rear end portion of the inner peripheral surface of the ferrule 3 is deformed to bite into the pipe p.