Patents by Inventor Yoshiki Nishibayashi

Yoshiki Nishibayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240118327
    Abstract: A diamond sensor unit includes: a diamond having a color center with electron spin; an excitation light irradiation part that irradiates the diamond with excitation light; a first patch antenna that receives electromagnetic waves; an electromagnetic wave irradiation part that irradiates the diamond with the electromagnetic waves received by the first patch antenna; a detection part that detects radiated light radiated from the color center of the diamond after the diamond is irradiated with the excitation light and the electromagnetic waves; and an optical waveguide that transmits the excitation light and the radiated light.
    Type: Application
    Filed: January 26, 2022
    Publication date: April 11, 2024
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Yoshiki NISHIBAYASHI, Hiromi NAKANISHI, Hiroshige DEGUCHI, Tsukasa HAYASHI, Natsuo TATSUMI
  • Publication number: 20240111008
    Abstract: A diamond sensor unit includes: a sensor part that includes a diamond having a color center with electron spin; an irradiation part that irradiates the diamond with excitation light; a detection part that detects radiated light from the color center of the diamond; and an optical waveguide that transmits the excitation light, and the radiated light.
    Type: Application
    Filed: January 26, 2022
    Publication date: April 4, 2024
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Yoshiki NISHIBAYASHI, Hiromi NAKANISHI, Hiroshige DEGUCHI, Tsukasa HAYASHI, Natsuo TATSUMI
  • Patent number: 11692264
    Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.
    Type: Grant
    Filed: May 10, 2022
    Date of Patent: July 4, 2023
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takuji Okahisa, Yoshiyuki Yamamoto, Yoshiki Nishibayashi, Natsuo Tatsumi
  • Patent number: 11629104
    Abstract: This method for producing a body obtained by processing a solid carbon-containing material includes: a step of preparing the solid carbon-containing material having at least a surface composed of solid carbon; and a step of processing the solid carbon-containing material. The step of processing the solid carbon-containing material includes: a sub-step of forming non-diamond carbon by heat-treating the solid carbon in the surface of the solid carbon-containing material; and a sub-step of removing at least a part of the non-diamond carbon.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: April 18, 2023
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Kensei Hamaki
  • Publication number: 20220411963
    Abstract: Provided is a synthetic single-crystal diamond containing nitrogen. In an X-ray absorption fine structure thereof, a ratio I405/I412 between an intensity I405 of a peak which appears at an energy of 405±1 eV and has a full width at ¾ maximum of 3 eV or more and an intensity I412 of a peak which appears at an energy of 412±2 eV is less than 1.
    Type: Application
    Filed: August 14, 2020
    Publication date: December 29, 2022
    Inventors: Yoshiki NISHIBAYASHI, Minori TERAMOTO, Yutaka KOBAYASHI, Hitoshi SUMIYA, Issei SATOH, Ryo TOYOSHIMA
  • Patent number: 11518680
    Abstract: A method for producing a body obtained by processing a solid carbon-containing material, the method includes: preparing the solid carbon-containing material composed of a material having at least a surface containing solid carbon; forming a gas phase fluid containing at least one of an active gas or an active plasma which are active against the solid carbon; and processing the solid carbon-containing material by injecting the gas phase fluid onto at least a part of the surface of the solid carbon-containing material.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: December 6, 2022
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Kensei Hamaki
  • Patent number: 11440799
    Abstract: A carbon material has at least either a peak related to diamond bonds, or a peak related to diamond-like bonds, appearing in a range of 1250 to 1400 cm?1 in a spectrum measured by Raman scattering spectrometry, and a full width at half maximum of a maximum peak, or each of full widths at half maximum of the maximum peak and a second largest peak, among peaks appearing in the range of 1250 to 1400 cm?1, has a signal less than 100 cm?1.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: September 13, 2022
    Assignees: SUMITOMO ELECTRIC INDUSTRIES, LTD., KYOTO UNIVERSITY
    Inventors: Tomoyuki Awazu, Masatoshi Majima, Yoshiki Nishibayashi, Toshiyuki Nohira, Kouji Yasuda, Kouji Hidaka
  • Publication number: 20220267894
    Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.
    Type: Application
    Filed: May 10, 2022
    Publication date: August 25, 2022
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Takuji Okahisa, Yoshiyuki Yamamoto, Yoshiki Nishibayashi, Natsuo Tatsumi
  • Patent number: 11371139
    Abstract: A method of manufacturing a diamond by a vapor phase synthesis method includes: preparing a substrate including a diamond seed crystal; forming a light absorbing layer lower in optical transparency than the substrate by performing ion implantation into the substrate, the light absorbing layer being formed at a predetermined depth from a main surface of the substrate; growing a diamond layer on the main surface of the substrate by the vapor phase synthesis method; and separating the diamond layer from the substrate by applying light from a main surface of at least one of the diamond layer and the substrate to allow the light absorbing layer to absorb the light and cause the light absorbing layer to be broken up.
    Type: Grant
    Filed: January 29, 2020
    Date of Patent: June 28, 2022
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya, Kazuo Nakamae
  • Patent number: 11359275
    Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.
    Type: Grant
    Filed: September 25, 2020
    Date of Patent: June 14, 2022
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takuji Okahisa, Yoshiyuki Yamamoto, Yoshiki Nishibayashi, Natsuo Tatsumi
  • Patent number: 11181590
    Abstract: A diamond magnetic sensor including diamond containing at least one NV? center, a microwave generator which emits microwaves to the diamond, an excitation light generator which emits excitation light to the NV? center of the diamond, and a fluorescence sensor which receives fluorescence produced from the NV? center of the diamond includes a pattern measurement apparatus which measures a temporal change pattern of magnetic field intensity based on variation in fluorescence intensity sensed by the fluorescence sensor.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: November 23, 2021
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki Nishibayashi, Kazuhiro Ikeda
  • Publication number: 20210268562
    Abstract: A tool with a through hole includes a base and a diamond component held by the base, and when the length of the diamond component along a center line of the through hole is denoted as L1 and the maximum value of a diameter of a circle having the same area as a region surrounded by an outer edge of the diamond component in a cross section having the center line as a normal line is denoted as M1, the ratio L1/M1 between L1 and M1 is 0.8 or more.
    Type: Application
    Filed: June 25, 2019
    Publication date: September 2, 2021
    Inventors: Takuya NOHARA, Akihiko UEDA, Yutaka KOBAYASHI, Yoshiki NISHIBAYASHI
  • Publication number: 20210230766
    Abstract: Provided are a diamond composite body capable of shortening a separation time for separating a substrate and a diamond layer, the substrate, and a method for manufacturing a diamond, as well as a diamond obtained from the diamond composite body and a tool including the diamond. The diamond composite body includes a substrate including a diamond seed crystal and having grooves in a main surface, a diamond layer formed on the main surface of the substrate, and a non-diamond layer formed on a substrate side at a constant depth from an interface between the substrate and the diamond layer.
    Type: Application
    Filed: April 12, 2021
    Publication date: July 29, 2021
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya
  • Publication number: 20210156033
    Abstract: Provided is a method for manufacturing a hard carbon-based coating. The method includes: a step A of preparing a film-forming apparatus including a power supply device and a discharge electrode containing a carbon material, and a substrate having a surface on which a coating is to be formed; and a step B of causing the film-forming apparatus to repeatedly generate a discharge between the discharge electrode and the substrate, to form a hard carbon-based coating on the surface.
    Type: Application
    Filed: September 11, 2018
    Publication date: May 27, 2021
    Applicants: Sumitomo Electric Industries, Ltd., MITSUBISHI MATERIALS CORPORATION, D.N.A. METAL COMPANY, LIMITED
    Inventors: Yoshiki NISHIBAYASHI, Shigeki MAEDA, Kazutaka FUJIWARA
  • Patent number: 11007558
    Abstract: A diamond die includes a diamond provided with a hole for drawing a wire material, the diamond being a CVD single-crystal diamond, an axis of the hole being inclined relative to a normal direction of a crystal plane of the diamond.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: May 18, 2021
    Assignees: Sumitomo Electric Hardmetal Corp., Sumitomo Electric Industries, Ltd., A.L.M.T. Corp.
    Inventors: Makoto Yukawa, Bunya Suemitsu, Takuya Kinoshita, Shigetoshi Sumimoto, Yutaka Kobayashi, Akihiko Ueda, Natsuo Tatsumi, Yoshiki Nishibayashi, Hitoshi Sumiya
  • Patent number: 11001938
    Abstract: Provided are a diamond composite body capable of shortening a separation time for separating a substrate and a diamond layer, the substrate, and a method for manufacturing a diamond, as well as a diamond obtained from the diamond composite body and a tool including the diamond. The diamond composite body includes a substrate including a diamond seed crystal and having grooves in a main surface, a diamond layer formed on the main surface of the substrate, and a non-diamond layer formed on a substrate side at a constant depth from an interface between the substrate and the diamond layer.
    Type: Grant
    Filed: August 10, 2015
    Date of Patent: May 11, 2021
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya
  • Publication number: 20210010131
    Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.
    Type: Application
    Filed: September 25, 2020
    Publication date: January 14, 2021
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Takuji Okahisa, Yoshiyuki Yamamoto, Yoshiki Nishibayashi, Natsuo Tatsumi
  • Publication number: 20200361778
    Abstract: A method for producing a body obtained by processing a solid carbon-containing material, the method includes: preparing the solid carbon-containing material composed of a material having at least a surface containing solid carbon; forming a gas phase fluid containing at least one of an active gas or an active plasma which are active against the solid carbon; and processing the solid carbon-containing material by injecting the gas phase fluid onto at least a part of the surface of the solid carbon-containing material.
    Type: Application
    Filed: August 13, 2018
    Publication date: November 19, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki NISHIBAYASHI, Natsuo TATSUMI, Kensei HAMAKI
  • Publication number: 20200361829
    Abstract: This method for producing a body obtained by processing a solid carbon-containing material includes: a step of preparing the solid carbon-containing material having at least a surface composed of solid carbon; and a step of processing the solid carbon-containing material. The step of processing the solid carbon-containing material includes: a sub-step of forming non-diamond carbon by heat-treating the solid carbon in the surface of the solid carbon-containing material; and a sub-step of removing at least a part of the non-diamond carbon.
    Type: Application
    Filed: August 13, 2018
    Publication date: November 19, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki NISHIBAYASHI, Natsuo TATSUMI, Kensei HAMAKI
  • Patent number: 10822693
    Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: November 3, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takuji Okahisa, Yoshiyuki Yamamoto, Yoshiki Nishibayashi, Natsuo Tatsumi