Abstract: A light emitting device includes: a flip-chip type light emitting element; a sealing portion; and a lens as defined herein, the light emitting element includes an n-type layer, an active layer, an electron blocking layer, a composition gradient layer, a p-type contact layer, and a p-side electrode as defined herein, and a thickness of the composition gradient layer is set such that light directed from the active layer toward the n-type layer and light directed from the active layer toward a side opposite to the n-type layer and then reflected by the p-side electrode toward the n-type layer strengthen each other in a direction perpendicular to a main surface of the light emitting element due to interference.

Abstract: An information storage device includes a storage unit, a control unit, an allocation information storage unit, a QoS parameter storage unit, and a monitoring result storage unit. The control unit creates and manages a logical storage area using the storage area of the storage unit when a storage area allocation request is received. The allocation information storage unit stores allocation information related to logical storage areas. The QoS parameter storage unit stores quality requests expected to be satisfied for a communication for using the logical storage area. The control unit monitors the operating state and characteristics of the storage unit and the communication status, and stores the results in the monitoring result storage unit. The control unit derives internal QoS parameters to be set in the information storage device from the information stored in the allocation information storage unit, the QoS parameter storage unit, and the monitoring result storage unit.

Abstract: A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a N2 atmosphere at not less than 650° C. or in a N2+O2 atmosphere at not less than 500° C.

Abstract: There is provided a solid-state imaging device capable of preventing the sensitivity difference from being generated between the pixels. The fixed imaging device of the present disclosure includes: a first pixel; and a second pixel located in a first direction of the first pixel, in which each of the first and second pixels includes a first transistor and a second transistor, and the first and second transistors in the second pixel are disposed periodically in the first direction with respect to the first and second transistors in the first pixel.

Abstract: According to one embodiment, a memory controller controls a plurality of non-volatile memory chips. The memory controller includes a memory that stores first data and a processing unit that processes the first data stored in the memory. During a write operation, the processing unit generates second data including the first data and additional data corresponding to the first data, changes the bit order of the second data based on information indicating the state of the write destination of the second data, and writes the second data having the changed bit order to the plurality of non-volatile memory chips. During a read operation, the processing unit reads the second data having the changed bit order from the plurality of non-volatile memory chips and revert the bit order of the read second data to the original state based on the information.

Abstract: According to one embodiment, a memory system includes a non-volatile memory and a controller. The non-volatile memory includes first and second memory areas. The controller is configured to, when receiving a write command from the host, determine a write method. The controller is configured to, when a first method is determined, write the data to the first memory area. The controller is configured to, when a second method is determined, write the data to the second memory area. The first method is a write method of writing the data to a physical address associated with the logical address designated in the write command. The second method is a write method of writing the data to a physical address designated by the controller.

Abstract: According to one embodiment, a memory controller controls a plurality of non-volatile memory chips. The memory controller includes a memory that stores first data and a processing unit that processes the first data stored in the memory. During a write operation, the processing unit generates second data including the first data and additional data corresponding to the first data, changes the bit order of the second data based on information indicating the state of the write destination of the second data, and writes the second data having the changed bit order to the plurality of non-volatile memory chips. During a read operation, the processing unit reads the second data having the changed bit order from the plurality of non-volatile memory chips and revert the bit order of the read second data to the original state based on the information.

Abstract: A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a N2 atmosphere at not less than 650° C. or in a N2+O2 atmosphere at not less than 500° C.

Abstract: A light-emitting element includes an n-type contact layer which includes AlGaN and in which a Fermi level and a conduction band are in degeneracy, and a light-emitting layer including AlGaN and being stacked on the n-type contact layer. An Al composition x of the n-type contact layer is not less than 0.1 greater than an Al composition x of the light-emitting layer. The n-type contact layer has an effective donor concentration that is a concentration to cause the degeneracy and that is not more than 4.0×1019 cm?3.

Abstract: According to one embodiment, a memory system includes a non-volatile memory and a controller. The non-volatile memory includes first and second memory areas. The controller is configured to, when receiving a write command from the host, determine a write method. The controller is configured to, when a first method is determined, write the data to the first memory area. The controller is configured to, when a second method is determined, write the data to the second memory area. The first method is a write method of writing the data to a physical address associated with the logical address designated in the write command. The second method is a write method of writing the data to a physical address designated by the controller.

Abstract: According to one embodiment, a memory system includes a cache configured to cache a part of a multi-level mapping table for logical-to-physical address translation, and a controller. The multi-level mapping table includes a plurality of hierarchical tables corresponding to a plurality of hierarchical levels. The table of each hierarchical level includes a plurality of address translation data portions. The controller sets a priority for each of the hierarchical level based on a degree of bias of reference for each of the hierarchical level, and preferentially caches each of the address translation data portions of a hierarchical level with a high priority into the cache, over each of the address translation data portions of a hierarchical level with low priority.

Abstract: According to one embodiment, a memory system includes a memory and a memory controller. The memory includes a first buffer and a memory cell array. The memory controller includes a second buffer for receiving first data from a host. The memory controller transfers the first data to the first buffer without accumulating a predetermined size of the first data in the second buffer. The memory controller creates second data in the first buffer and programs the second data created in the first buffer into the memory cell array. The second data is formed of a plurality of third data. The third data is first data received from the memory controller by the memory. The size of the second data is equal to a size of a unit in which to program into the memory cell array.

Abstract: A storage system includes non-volatile storage devices and a control device. Each of the storage devices is divided into blocks, and data is erased in units of the blocks. The control device includes a setting unit and a writing/reading unit. The setting unit sets first storage regions obtained by dividing a storage region for each of the storage devices and sets second storage regions obtained by dividing storage regions of all of the storage devices for all of the storage devices. The writing/reading unit manages data stored in the storage devices in units of the second storage regions. The setting unit sets each of the first storage regions so that the first storage region for at least one of the plurality of storage devices includes the entirety of one or more blocks and sets each of the second storage regions to include two or more of the first storage regions.

Abstract: A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and AlxGa1-xN (0.1?x?1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.

Abstract: According to one embodiment, a memory system includes a cache configured to cache a part of a multi-level mapping table for logical-to-physical address translation, and a controller. The multi-level mapping table includes a plurality of hierarchical tables corresponding to a plurality of hierarchical levels. The table of each hierarchical level includes a plurality of address translation data portions. The controller sets a priority for each of the hierarchical level based on a degree of bias of reference for each of the hierarchical level, and preferentially caches each of the address translation data portions of a hierarchical level with a high priority into the cache, over each of the address translation data portions of a hierarchical level with low priority.

Abstract: To provide a method for producing a Group III nitride semiconductor light-emitting device using a substrate containing Al such as AlN substrate while suppressing polarity inversion. The production method comprising an oxide film formation step, a first Group III nitride layer formation step, a first semiconductor layer formation step, a light-emitting layer formation step, and a second semiconductor layer formation step. In the production method, an AlN substrate or AlGaN substrate is employed. In the oxide film formation step, an oxide film containing Al atoms, N atoms, and O atoms is formed. In the first Group III nitride layer formation step, an AlN layer or AlGaN layer is formed as the first Group III nitride layer under the condition that the substrate temperature 1200° C. to 1450° C.

Abstract: According to one embodiment, a memory system includes a memory and a memory controller. The memory includes a first buffer and a memory cell array. The memory controller includes a second buffer for receiving first data from a host. The memory controller transfers the first data to the first buffer without accumulating a predetermined size of the first data in the second buffer. The memory controller creates second data in the first buffer and programs the second data created in the first buffer into the memory cell array. The second data is formed of a plurality of third data. The third data is first data received from the memory controller by the memory. The size of the second data is equal to a size of a unit in which to program into the memory cell array.

Abstract: When receiving a write command from a host, a memory system according to one embodiment updates first correspondence information indicating the correspondence relationship between a logical address corresponding to user data and a position in a first memory and transmits the user data which has been stored in a second memory to the first memory. When the transmission is completed, the memory system writes the user data to the first memory. When the update and the transmission are completed, the memory system releases a memory area which stores the user data such that the memory area can be used as a memory area for other data.

Abstract: According to one embodiment, a memory system includes a memory and a memory controller. The memory includes a first buffer and a memory cell array. The memory controller includes a second buffer for receiving first data from a host. The memory controller transfers the first data to the first buffer without accumulating a predetermined size of the first data in the second buffer. The memory controller creates second data in the first buffer and programs the second data created in the first buffer into the memory cell array. The second data is formed of a plurality of third data. The third data is first data received from the memory controller by the memory. The size of the second data is equal to a size of a unit in which to program into the memory cell array.

Abstract: A light-emitting element includes an n-type semiconductor layer mainly including AlxGa1?XN (0.5?x?1), a p-type semiconductor layer, a light-emitting layer sandwiched between the n-type semiconductor layer and the p-type semiconductor layer, an n-electrode connected to the n-type semiconductor layer, and a plurality of p-electrodes that are connected to the p-type semiconductor layer and are arranged in a dot pattern. An area of the n-electrode is not less than 25% and not more than 50% of a chip area.