Abstract: A cell cryopreservation method including adding a 1 volume % of a composition comprising 0.01 wt % to 20 wt % of a sophorose lipid to cells in a cell culture medium just before or up to 6 hours before cryopreserving the cells; and cryopreserving the cell culture medium, wherein the composition improves cell viability after cryopreservation compared to cells that are cryopreserved with a similar composition that does not contain the sophorose lipid.

Abstract: An object of the present invention is to provide a pericyte-like cell having high angiogenic potential with a higher cell proliferation ability than a primary pericyte available in the past and high VEGF expression, and a method for producing the same. Provided are a method for producing a VEGF-highly expressing pericyte-like cell, the method including selecting a CD56(?) pericyte-like cell from a population including a pericyte-like cell obtained by inducing differentiation of a pluripotent stem cell; and a VEGF-highly expressing pericyte-like cell produced by the production method.

Abstract: A ventilation system includes a refrigerant circuit, supply and exhaust fans, and a control unit. The refrigerant circuit has a compressor and first and second heat exchangers connected by a refrigerant pipe with a refrigerant flowing in the refrigerant circuit. The supply fan is arranged to supply air from an outdoor space to an indoor space through the first heat exchanger. The exhaust fan is arranged to exhaust air in the indoor space to the outdoor space through the second heat exchanger. The control unit determines whether the supply fan and the exhaust fan are normal. The control unit, upon determining that one of the supply fan or the exhaust fan is abnormal, stops the one of the supply fan or the exhaust fan determined to be abnormal, and continues an operation of an other one of the supply fan or the exhaust fan determined to be normal.

Abstract: An object of the present invention is to provide a pericyte-like cell having high angiogenic potential with a higher cell proliferation ability than a primary pericyte available in the past and high VEGF expression, and a method for producing the same. Provided are a method for producing a VEGF-highly expressing pericyte-like cell, the method including selecting a CD56(?) pericyte-like cell from a population including a pericyte-like cell obtained by inducing differentiation of a pluripotent stem cell; and a VEGF-highly expressing pericyte-like cell produced by the production method.

Abstract: A memory system includes a nonvolatile memory including a memory cell, and a controller. The controller is configured to write multi-bit data into the memory cell through a first write operation of writing a first part, and not a second part, of the multi-bit data and then a second write operation of writing the first and second parts. The controller is configured to, during writing of the multi-bit data, determine an amount of time that has passed since the first write operation, perform the second write operation in a first manner by inputting the second part, and not the first part, from the controller, when the determined amount is less than a threshold amount, and perform the second write operation in a second manner by inputting the first and second parts from the controller, when the determined amount is greater than the threshold amount.

Abstract: An optical detection device including a through electrode is provided. The optical detection device includes a first semiconductor layer having a photoelectric conversion region, a first surface, and a second surface that is a light entrance surface, a second semiconductor layer with a third surface and a fourth surface, a second wiring layer overlapped with the third surface, a third wiring layer overlapped with the fourth surface, a first wiring layer with one surface overlapped with the first surface and another surface overlapped with one of the second wiring layer and the third wiring layer, a first conductor that has a first width, includes a first material, and penetrates the second semiconductor layer in a thickness direction, and a second conductor that has a second width smaller than the first width, includes a second material different from the first material, and penetrates the second semiconductor layer in the thickness direction.

Abstract: An information storage device includes a storage unit, a control unit, an allocation information storage unit, a QoS parameter storage unit, and a monitoring result storage unit. The control unit creates and manages a logical storage area using the storage area of the storage unit when a storage area allocation request is received. The allocation information storage unit stores allocation information related to logical storage areas. The QoS parameter storage unit stores quality requests expected to be satisfied for a communication for using the logical storage area. The control unit monitors the operating state and characteristics of the storage unit and the communication status, and stores the results in the monitoring result storage unit. The control unit derives internal QoS parameters to be set in the information storage device from the information stored in the allocation information storage unit, the QoS parameter storage unit, and the monitoring result storage unit.

Abstract: A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a N2 atmosphere at not less than 650° C. or in a N2+O2 atmosphere at not less than 500° C.

Abstract: There is provided a solid-state imaging device capable of preventing the sensitivity difference from being generated between the pixels. The fixed imaging device of the present disclosure includes: a first pixel; and a second pixel located in a first direction of the first pixel, in which each of the first and second pixels includes a first transistor and a second transistor, and the first and second transistors in the second pixel are disposed periodically in the first direction with respect to the first and second transistors in the first pixel.

Abstract: According to one embodiment, a memory controller controls a plurality of non-volatile memory chips. The memory controller includes a memory that stores first data and a processing unit that processes the first data stored in the memory. During a write operation, the processing unit generates second data including the first data and additional data corresponding to the first data, changes the bit order of the second data based on information indicating the state of the write destination of the second data, and writes the second data having the changed bit order to the plurality of non-volatile memory chips. During a read operation, the processing unit reads the second data having the changed bit order from the plurality of non-volatile memory chips and revert the bit order of the read second data to the original state based on the information.

Abstract: According to one embodiment, a memory system includes a non-volatile memory and a controller. The non-volatile memory includes first and second memory areas. The controller is configured to, when receiving a write command from the host, determine a write method. The controller is configured to, when a first method is determined, write the data to the first memory area. The controller is configured to, when a second method is determined, write the data to the second memory area. The first method is a write method of writing the data to a physical address associated with the logical address designated in the write command. The second method is a write method of writing the data to a physical address designated by the controller.

Abstract: According to one embodiment, a memory controller controls a plurality of non-volatile memory chips. The memory controller includes a memory that stores first data and a processing unit that processes the first data stored in the memory. During a write operation, the processing unit generates second data including the first data and additional data corresponding to the first data, changes the bit order of the second data based on information indicating the state of the write destination of the second data, and writes the second data having the changed bit order to the plurality of non-volatile memory chips. During a read operation, the processing unit reads the second data having the changed bit order from the plurality of non-volatile memory chips and revert the bit order of the read second data to the original state based on the information.

Abstract: A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a N2 atmosphere at not less than 650° C. or in a N2+O2 atmosphere at not less than 500° C.

Abstract: A light-emitting element includes an n-type contact layer which includes AlGaN and in which a Fermi level and a conduction band are in degeneracy, and a light-emitting layer including AlGaN and being stacked on the n-type contact layer. An Al composition x of the n-type contact layer is not less than 0.1 greater than an Al composition x of the light-emitting layer. The n-type contact layer has an effective donor concentration that is a concentration to cause the degeneracy and that is not more than 4.0×1019 cm?3.

Abstract: According to one embodiment, a memory system includes a non-volatile memory and a controller. The non-volatile memory includes first and second memory areas. The controller is configured to, when receiving a write command from the host, determine a write method. The controller is configured to, when a first method is determined, write the data to the first memory area. The controller is configured to, when a second method is determined, write the data to the second memory area. The first method is a write method of writing the data to a physical address associated with the logical address designated in the write command. The second method is a write method of writing the data to a physical address designated by the controller.

Abstract: According to one embodiment, a memory system includes a cache configured to cache a part of a multi-level mapping table for logical-to-physical address translation, and a controller. The multi-level mapping table includes a plurality of hierarchical tables corresponding to a plurality of hierarchical levels. The table of each hierarchical level includes a plurality of address translation data portions. The controller sets a priority for each of the hierarchical level based on a degree of bias of reference for each of the hierarchical level, and preferentially caches each of the address translation data portions of a hierarchical level with a high priority into the cache, over each of the address translation data portions of a hierarchical level with low priority.

Abstract: According to one embodiment, a memory system includes a memory and a memory controller. The memory includes a first buffer and a memory cell array. The memory controller includes a second buffer for receiving first data from a host. The memory controller transfers the first data to the first buffer without accumulating a predetermined size of the first data in the second buffer. The memory controller creates second data in the first buffer and programs the second data created in the first buffer into the memory cell array. The second data is formed of a plurality of third data. The third data is first data received from the memory controller by the memory. The size of the second data is equal to a size of a unit in which to program into the memory cell array.

Abstract: A storage system includes non-volatile storage devices and a control device. Each of the storage devices is divided into blocks, and data is erased in units of the blocks. The control device includes a setting unit and a writing/reading unit. The setting unit sets first storage regions obtained by dividing a storage region for each of the storage devices and sets second storage regions obtained by dividing storage regions of all of the storage devices for all of the storage devices. The writing/reading unit manages data stored in the storage devices in units of the second storage regions. The setting unit sets each of the first storage regions so that the first storage region for at least one of the plurality of storage devices includes the entirety of one or more blocks and sets each of the second storage regions to include two or more of the first storage regions.

Abstract: A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and AlxGa1-xN (0.1?x?1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.

Abstract: According to one embodiment, a memory system includes a cache configured to cache a part of a multi-level mapping table for logical-to-physical address translation, and a controller. The multi-level mapping table includes a plurality of hierarchical tables corresponding to a plurality of hierarchical levels. The table of each hierarchical level includes a plurality of address translation data portions. The controller sets a priority for each of the hierarchical level based on a degree of bias of reference for each of the hierarchical level, and preferentially caches each of the address translation data portions of a hierarchical level with a high priority into the cache, over each of the address translation data portions of a hierarchical level with low priority.