Abstract: An infrared detecting device is provided. The infrared detecting device includes: a semiconductor substrate; a first layer having a first conductivity type on the semiconductor substrate; a light receiving layer on the first layer; and a second layer having a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure. The second layer contains AlzIn1-zSb (0.05<z<0.18). The side surfaces and an upper surface of the mesa structure are covered with the protective layer. A part of an upper surface of the second layer that forms an interface between the second layer and the protective layer has an oxide layer made of a constituent material of the second layer. The oxide layer includes an oxide of Al and has no oxide of Sb.

Abstract: A compound semiconductor device having a high SNR is provided. A compound semiconductor device (1) includes an insulating substrate (10); a plurality of mesa-type compound semiconductor laminate portions (20) including a first compound semiconductor layer (21) having a first conductivity type, an active layer (23) made of a compound semiconductor material, and a second compound semiconductor layer (25) having a second conductivity type laminated in this order; a first protective film (31); a second protective film (32) made of a material having a film density greater than that of the first protective film (31); and a recess (40) including recess side surfaces (40a) and a recess bottom surface (40b) for separating the plurality of mesa-type compound semiconductor laminate portion. The recess side surface and the recess bottom surface are covered with the first protective film and the second protective film.

Abstract: Provided is an infrared detecting device with a high SNR. The infrared detecting device includes: a semiconductor substrate 10; a first layer 21 having a first conductivity type on the semiconductor substrate; a light receiving layer 22 on the first layer; and a second layer 23 having a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure, the light receiving layer contains AlxIn1-xSb (0.05<x<0.18), and at least a part of side surfaces of the mesa structure are covered with a protective layer, and part of the protective layer that is in contact with side surfaces of the light receiving layer is made of silicon nitride.

Abstract: Provided is an infrared detecting device with a high SNR. The infrared detecting device includes: a semiconductor substrate 10; a first layer 21 having a first conductivity type on the semiconductor substrate; a light receiving layer 22 on the first layer; and a second layer 23 having a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure, the light receiving layer contains AlxIn1-xSb (0.05<x<0.18), and at least a part of side surfaces of the mesa structure are covered with a protective layer, and part of the protective layer that is in contact with side surfaces of the light receiving layer is made of silicon nitride.

Abstract: Provided is an infrared light emitting device with high emission intensity. The infrared light emitting device includes: a semiconductor substrate; a first compound semiconductor layer; a light emitting layer containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s); a third compound semiconductor layer; and a second compound semiconductor layer containing at least In, Al, and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), in which the first compound semiconductor layer includes, in the stated order, a first A layer, a first B layer, and a first C layer, each containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), and the proportion(s) of the Al composition or the Al composition and the Ga composition of each layer satisfy a predetermined relation(s).

Abstract: Provided is an infrared light emitting device with high emission intensity. The infrared light emitting device includes: a semiconductor substrate; a first compound semiconductor layer; a light emitting layer containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s); a third compound semiconductor layer; and a second compound semiconductor layer containing at least In, Al, and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), in which the first compound semiconductor layer includes, in the stated order, a first A layer, a first B layer, and a first C layer, each containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), and the proportion(s) of the Al composition or the Al composition and the Ga composition of each layer satisfy a predetermined relation(s).

Abstract: Provided is an infrared detecting device with high SNR. The infrared detecting device includes: a semiconductor substrate; a first compound semiconductor layer; a light receiving layer formed on the first compound semiconductor layer and containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s); a third compound semiconductor layer; and a second compound semiconductor layer containing at least In, Al, and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), in which the first compound semiconductor layer includes, in the stated order, a first A layer, a first B layer, and a first C layer, each containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), and the proportion(s) of the Al composition or the Al composition and the Ga composition of each layer satisfy a predetermined relation(s).

Abstract: Provided is an infrared detecting device with high SNR. The infrared detecting device includes: a semiconductor substrate; a first compound semiconductor layer; a light receiving layer formed on the first compound semiconductor layer and containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s); a third compound semiconductor layer; and a second compound semiconductor layer containing at least In, Al, and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), in which the first compound semiconductor layer includes, in the stated order, a first A layer, a first B layer, and a first C layer, each containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), and the proportion(s) of the Al composition or the Al composition and the Ga composition of each layer satisfy a predetermined relation(s).

Abstract: A light emitting device including: a light emitting element; a molded resin portion configured to seal at least a portion of the light emitting element; a temperature information acquiring unit configured to acquire temperature information; a humidity information calculating unit configured to calculate humidity information, based on information relating to at least either electrical characteristics or optical characteristics of the light emitting element and the temperature information; and a controlling unit configured to control the light emitting element, based on the temperature information and the humidity information.

Abstract: A light receiving device including: a light receiving element configured to receive at least a portion of light incident from an outside and output an output signal corresponding to amount of received light; a molded resin portion configured to seal at least a portion of the light receiving element; a temperature information acquiring unit configured to acquire temperature information; a humidity information calculating unit configured to calculate humidity information, based on information relating to at least either electrical characteristics or optical characteristics of the light receiving element and the temperature information; and a compensating unit configured to compensate the output signal, based on the temperature information and the humidity information.

Abstract: A light receiving device including: a light receiving element configured to receive at least a portion of light incident from an outside and output an output signal corresponding to amount of received light; a molded resin portion configured to seal at least a portion of the light receiving element; a temperature information acquiring unit configured to acquire temperature information; a humidity information calculating unit configured to calculate humidity information, based on information relating to at least either electrical characteristics or optical characteristics of the light receiving element and the temperature information; and a compensating unit configured to compensate the output signal, based on the temperature information and the humidity information.

Abstract: A light emitting device including: a light emitting element; a molded resin portion configured to seal at least a portion of the light emitting element; a temperature information acquiring unit configured to acquire temperature information; a humidity information calculating unit configured to calculate humidity information, based on information relating to at least either electrical characteristics or optical characteristics of the light emitting element and the temperature information; and a controlling unit configured to control the light emitting element, based on the temperature information and the humidity information.

Abstract: When a TCP packet communication acceleration technique is applied to a wireless communication network, an acceleration effect is determined according to various pieces of information in real time, and acceleration control is dynamically performed to efficiently accelerate the communication by the use of the TCP of a wireless terminal present in the wireless communication network. A wireless communication system including at least one wireless terminal and at least one base station that communicates with the wireless terminal further includes an information collection server that collects various pieces of information from the base station and the wireless terminal. The base station includes a packet acceleration unit that accelerates a TCP packet communication, and the information collection server determines whether to accelerate the base station from the various pieces of information, or not, and controls the acceleration of the base station on the basis of its determination result.

Abstract: In the case where a plurality of wireless systems differing in service area from each other are present, there is provided a wireless terminal having a function for collecting a history of application information, and a history of position information, a function for transmitting these histories to a priority table control server, a function whereby the priority table control server prepares a priority table on the basis of information obtained, and a function whereby the information is transmitted to the wireless terminal. The wireless terminal selects a connection destination on the basis of the information.

Abstract: A method for supplying rolling oil for cold rolling is provided wherein emulsion rolling oil is supplied using both: (i) a first rolling oil supply system for sypplying the emulsion rolling oil to a roll and a steel sheet being rolled in a recirculation mode, and (ii) a second rolling oil supply system for supplying the emulsion rolling oil to only the front and back surface of the stell sheet. The emulsion rolling oil supplied by the first and second supply systems comprise an emulsifier of a same type and concentration, and the second supply system is controlled so that an average particle diameter of emulsion is larger than an average particle diameter of emulsion of the first supply system. The emulsion of the second supply system, which has not stuck onto the steel sheet being rolled, is then joined to the emulsion of the first supply system.

Abstract: A method for supplying rolling oil for cold rolling comprises the steps of: supplying emulsion rolling oil using a first rolling oil supply system supplying the emulsion rolling oil to a roll and a steel sheet in a recirculation mode and a second rolling oil supply system supplying the emulsion rolling oil to only the front and back surface of the steel sheet, wherein the emulsion rolling oil, which is added with an emulsifier of the same type and concentration with respect to the amount of oil as those of the emulsifier of the first supply system and controlled so that the average particle diameter of emulsion is larger than that of emulsion of the first supply system, is supplied from the second supply system; and joining the emulsion of the second supply system to the emulsion of the first supply system.

Abstract: A hard disk drive includes a housing which has a bottom wall and a cover facing each other. A stator for generating an alernating magnetic field is attached to the bottom wall. First and second bearings are provided on the stator and the cover, respectively, and a rotating shaft is rotatably supported by the bearings. A rotor formed of a magnetic material is fixed to the rotating shaft and has first and second surfaces facing the stator and the cover. A ring-shaped magnet is fixed to the first surface of the rotor to face the stator, and a magnetic disk is mounted on the second surface of the rotor.

Abstract: A magnetic disk apparatus, a method for assembling an actuator mechanism thereof and an assembling unit of the actuator mechanism, wherein a plurality of head arms are installed integrally onto an arm supporting block and a head assembly is fixed to these head arms by use of arm mounting assembly. Also, an assembling method and assembling unit suitable for installing the head assembly to the head arm in the case that a plurality of head arms are installed integrally onto the arm supporting block. Because a plurality of head arms are installed integrally onto the arm supporting block, its assembling work is simple, the cost is decreased, and still more it is possible to effectively reduce a latent off-track of magnetic head.

Abstract: Disclosed is a flexible disk drive apparatus which is so formed that a flexible disk cartridge drives a pop-up arm urged in the direction opposite to the cartridge inserting direction when the cartridge is inserted in the apparatus with doors open; the pop-up arm is latched to a main frame of the apparatus after the cartridge has reached a predetermined working position, while the pop-up arm and cartridge are forced out toward the doors by the urging force before the cartridge reaches the working position.