Patents by Inventor Yoshiki Sugeta
Yoshiki Sugeta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8187798Abstract: It is disclosed a method of forming fine patterns comprising: subjecting a substrate having photoresist patterns to a hydrophilic treatment, covering the substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely.Type: GrantFiled: November 16, 2009Date of Patent: May 29, 2012Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
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Patent number: 8142980Abstract: It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, further characterized by comprising a water-soluble polymer which contains at least methacrylic acid and/or methyl methacrylate as the constitutive monomer thereof. Also disclosed is a method of forming fine-line patterns using the over-coating agent.Type: GrantFiled: December 4, 2009Date of Patent: March 27, 2012Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa, Naohisa Ueno
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Patent number: 8124318Abstract: It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing either a water-soluble polymer and an amide group-containing monomer or a water-soluble polymer which contains at least (meth)acrylamide as a monomeric component. Also disclosed is a method of forming fine-line patterns using any one of said over-coating agents. According to the invention, the thermal shrinkage of the over-coating agent for forming fine patterns in the heat treatment can be extensively increased, and one can obtain fine-line patterns which exhibit good profiles while satisfying the characteristics required of semiconductor devices.Type: GrantFiled: August 24, 2010Date of Patent: February 28, 2012Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
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Patent number: 8043798Abstract: It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns thereon made of a photoresist composition which is sensitive to high energy light rays with wavelength of 200 nm or shorter or electron beam radiation, with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely. The present invention provides a method of forming fine patterns whereby fine patterns having pattern width or diameter of 100 nm or shorter and being excellent in uniformity (in-plane uniformity), etc. can be formed by ultrafine processing using high energy light rays with wavelength of 200 nm or shorter or electron beams.Type: GrantFiled: August 21, 2003Date of Patent: October 25, 2011Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Tsuyoshi Nakamura, Tasuku Matsumiya, Kiyoshi Ishikawa, Yoshiki Sugeta, Toshikazu Tachikawa
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Publication number: 20100316802Abstract: It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing either a water-soluble polymer and an amide group-containing monomer or a water-soluble polymer which contains at least (meth)acrylamide as a monomeric component. Also disclosed is a method of forming fine-line patterns using any one of said over-coating agents. According to the invention, the thermal shrinkage of the over-coating agent for forming fine patterns in the heat treatment can be extensively increased, and one can obtain fine-line patterns which exhibit good profiles while satisfying the characteristics required of semiconductor devices.Type: ApplicationFiled: August 24, 2010Publication date: December 16, 2010Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
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Publication number: 20100272909Abstract: It is disclosed a method of forming fine patterns comprising repeating plural times the following course of steps: covering a substrate having thereon photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between the adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent. The invention provides a method of forming fine patterns which has high ability to control pattern dimensions and provide fine patterns that have a satisfactory profile and satisfy the characteristics required of semiconductor devices, even in the case of employing a substrate having thick-film photoresist patterns in a thickness of about 1.0 ?m or more.Type: ApplicationFiled: July 6, 2010Publication date: October 28, 2010Inventors: Hiroshi SHINBORI, Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
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Publication number: 20100139838Abstract: It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing a water-soluble polymer and a water-soluble fluorine compound (e.g. a fluoroalkyl alcohol or a fluoroalkyl carboxylic acid). Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can reduce microfoaming and defects to produce fine-line patterns that have good leveling and coating properties and which also present satisfactory profiles and meet the characteristics required of today's semiconductor devices.Type: ApplicationFiled: June 19, 2009Publication date: June 10, 2010Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
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Publication number: 20100086694Abstract: It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, further characterized by comprising a water-soluble polymer which contains at least methacrylic acid and/or methyl methacrylate as the constitutive monomer thereof. Also disclosed is a method of forming fine-line patterns using the over-coating agent.Type: ApplicationFiled: December 4, 2009Publication date: April 8, 2010Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa, Naohisa Ueno
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Publication number: 20100075263Abstract: It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing either a water-soluble polymer and an amide group-containing monomer or a water-soluble polymer which contains at least (meth)acrylamide as a monomeric component. Also disclosed is a method of forming fine-line patterns using any one of said over-coating agents. According to the invention, the thermal shrinkage of the over-coating agent for forming fine patterns in the heat treatment can be extensively increased, and one can obtain fine-line patterns which exhibit good profiles while satisfying the characteristics required of semiconductor devices.Type: ApplicationFiled: November 23, 2009Publication date: March 25, 2010Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
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Publication number: 20100068662Abstract: It is disclosed a method of forming fine patterns comprising: subjecting a substrate having photoresist patterns to a hydrophilic treatment, covering the substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely.Type: ApplicationFiled: November 16, 2009Publication date: March 18, 2010Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
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Patent number: 7579138Abstract: The present invention provides a method for forming a micropattern, enabling to narrow intervals between resist patterns, in which the narrowing extent of intervals between resist patterns can be increased while maintaining the controllability of resist pattern dimensions and the good resist pattern shape within a wafer face. The present invention relates a method for forming a micropattern comprising: a coating film formation process for applying a coating composition to form a coating film on a substrate having a resist pattern; a first heating treatment process for heat-treating the coating film; a coating film removal process for removing the coating film after the first heating treatment process; and a second heat treatment process for heat-treating the pattern narrowed after the coating film removal process.Type: GrantFiled: July 19, 2007Date of Patent: August 25, 2009Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Yoshiki Sugeta, Naohisa Ueno
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Publication number: 20090186156Abstract: It is disclosed a method of forming fine patterns comprising: subjecting a substrate having photoresist patterns to a hydrophilic treatment, covering the substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely.Type: ApplicationFiled: March 23, 2009Publication date: July 23, 2009Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
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Patent number: 7553610Abstract: It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely by way of bringing thusly treated substrate into contact with a remover solution for over 60 seconds.Type: GrantFiled: September 18, 2008Date of Patent: June 30, 2009Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Fumitake Kaneko, Yoshiki Sugeta, Toshikazu Tachikawa
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Publication number: 20090148611Abstract: It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing either a water-soluble polymer and an amide group-containing monomer or a water-soluble polymer which contains at least (meth)acrylamide as a monomeric component. Also disclosed is a method of forming fine-line patterns using any one of said over-coating agents. According to the invention, the thermal shrinkage of the over-coating agent for forming fine patterns in the heat treatment can be extensively increased, and one can obtain fine-line patterns which exhibit good profiles while satisfying the characteristics required of semiconductor devices.Type: ApplicationFiled: February 10, 2009Publication date: June 11, 2009Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
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Publication number: 20090126855Abstract: It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, further characterized by comprising a water-soluble polymer which contains at least methacrylic acid and/or methyl methacrylate as the constitutive monomer thereof. Also disclosed is a method of forming fine-line patterns using the over-coating agent.Type: ApplicationFiled: January 12, 2009Publication date: May 21, 2009Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa, Naohisa Ueno
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Publication number: 20090041948Abstract: It is disclosed a method of forming fine patterns comprising repeating plural times the following course of steps: covering a substrate having thereon photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between the adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent. The invention provides a method of forming fine patterns which has high ability to control pattern dimensions and provide fine patterns that have a satisfactory profile and satisfy the characteristics required of semiconductor devices, even in the case of employing a substrate having thick-film photoresist patterns in a thickness of about 1.0 ?m or more.Type: ApplicationFiled: September 22, 2008Publication date: February 12, 2009Inventors: Hiroshi Shinbori, Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
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Publication number: 20090029297Abstract: It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely by way of bringing thusly treated substrate into contact with a remover solution for over 60 seconds.Type: ApplicationFiled: September 18, 2008Publication date: January 29, 2009Inventors: Fumitake Kaneko, Yoshiki Sugeta, Toshikazu Tachikawa
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Publication number: 20090011601Abstract: It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing a copolymer or a mixture of polyvinyl alcohol with a water-soluble polymer other than polyvinyl alcohol. Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can effectively increase the shrinkage amount (the amount of heat shrinking) of the agent, thereby achieving a remarkably improved effect of forming or defining fine-line patterns and which also present satisfactory profiles and meet the characteristics required of today's semiconductor devices.Type: ApplicationFiled: September 8, 2008Publication date: January 8, 2009Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa, Kazumasa Wakiya
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Publication number: 20080145539Abstract: It is disclosed a method of forming fine patterns comprising: subjecting a substrate having photoresist patterns to a hydrophilic treatment, covering the substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely.Type: ApplicationFiled: February 11, 2008Publication date: June 19, 2008Inventors: Yoshiki Sugeta, Fumitake Kaneko, Toshikazu Tachikawa
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Publication number: 20080020328Abstract: The present invention provides a method for forming a micropattern, enabling to narrow intervals between resist patterns, in which the narrowing extent of intervals between resist patterns can be increased while maintaining the controllability of resist pattern dimensions and the good resist pattern shape within a wafer face. The present invention relates a method for forming a micropattern comprising: a coating film formation process for applying a coating composition to form a coating film on a substrate having a resist pattern; a first heating treatment process for heat-treating the coating film; a coating film removal process for removing the coating film after the first heating treatment process; and a second heat treatment process for heat-treating the pattern narrowed after the coating film removal process.Type: ApplicationFiled: July 19, 2007Publication date: January 24, 2008Applicant: Tokyo Ohka Kogyo Co., Ltd.Inventors: Yoshiki Sugeta, Naohisa Ueno