Abstract: To provide an optical nuclear magnetic resonance apparatus in which a cleaning mechanism that can be mounted on an apparatus for performing an optical magnetic resonance method and can remove deposits on a sensor surface is mounted, and removal of contamination of the sensor surface can be determined. In a component analysis apparatus according to the present invention, a sensor includes therein a defect having an electron spin that causes electron spin resonance, an orientation of the electron spin can be optically detected, and an ozone generation device and an oxygen radical generation device are driven during washing of the sensor.

Abstract: A powder mixing system and method improves productivity of a final product by reducing time required for completion of mixing. The powder mixing system includes a mixing vessel provided with a rotating shaft for mixing multiple kinds of powder, a rotating machine for rotating the mixing vessel by means of the rotating shaft, an image photographing device for acquiring an image of the powder in a mixing process, and a computer. The mixing vessel includes a window through which the image of the powder is photographed. The computer has a function of detecting that the mixing vessel is located at a predetermined position. The image photographing device acquires the image of the powder through the window of the mixing vessel located at the predetermined position. The computer estimates a mixing state of the powder based on the acquired image of the powder.

Abstract: A sample holder structure is provided with which it is possible to reduce current noise derived from electromagnetic induction, etc. in electricity-detection electron spin resonance spectroscopy. Also provided is a process for producing the structure. The material of the sample holder, which is used in an electricity-detection electron spin resonance device, is an FR-4 resin, alumina, glass, or Teflon. The sample holder has four wiring leads formed on the surface thereof. The four wiring leads each has a three-layer structure composed of a nickel layer, a gold layer, and a resist layer which have been arranged in the order from the sample holder surface, and the sample holder has the shape of the letter T. The sample holder has, formed in the end thereof, a gold pad for affixing a sample, and the gold pad has a multilayer structure composed of a nickel layer and a gold layer arranged in this order from the sample holder surface.

Abstract: A sample holder structure is provided with which it is possible to reduce current noise derived from electromagnetic induction, etc. in electricity-detection electron spin resonance spectroscopy. Also provided is a process for producing the structure. The material of the sample holder, which is used in an electricity-detection electron spin resonance device, is an FR-4 resin, alumina, glass, or Teflon. The sample holder has four wiring leads formed on the surface thereof. The four wiring leads each has a three-layer structure composed of a nickel layer, a gold layer, and a resist layer which have been arranged in the order from the sample holder surface, and the sample holder has the shape of the letter T. The sample holder has, formed in the end thereof, a gold pad for affixing a sample, and the gold pad has a multilayer structure composed of a nickel layer and a gold layer arranged in this order from the sample holder surface.

Abstract: A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.

Abstract: The charge retention characteristics of a non-volatile memory, particularly, a MONOS-type non-volatile memory is improved. In a non-volatile memory cell including a tunnel silicon oxide film (107), a silicon nitride film (104) serving as a charge storage film, a silicon oxide film (105), and a gate electrode (108) which are sequentially formed on a semiconductor substrate, the tunnel silicon oxide film (107) has a stacked structure of a silicon oxynitride film (102) and a silicon oxide film (103). Herein, it is configured such that a density of nitrogen atoms contained in the silicon oxynitride film (102) decreases as a distance from an interface with the semiconductor substrate increases in a film-thickness direction of the silicon oxynitride film (102).

Abstract: The charge retention characteristics of a non-volatile memory, particularly, a MONOS-type non-volatile memory is improved. In a non-volatile memory cell including a tunnel silicon oxide film (107), a silicon nitride film (104) serving as a charge storage film, a silicon oxide film (105), and a gate electrode (108) which are sequentially formed on a semiconductor substrate, the tunnel silicon oxide film (107) has a stacked structure of a silicon oxynitride film (102) and a silicon oxide film (103). Herein, it is configured such that a density of nitrogen atoms contained in the silicon oxynitride film (102) decreases as a distance from an interface with the semiconductor substrate increases in a film-thickness direction of the silicon oxynitride film (102).

Abstract: A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.

Abstract: Provided is a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. In the display device using the TFT, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a part of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. A surface density of the defects is preferably 2.5×1010 cm?2 or more to 4.0×1010 cm?2 or less.

Abstract: Embodiments of the present invention provide a magnetic head suitable for high density recording at a high yield by reducing the thickness of an air-bearing surface protection layer of a magnetic head and suppressing reduction in the signal-to-noise (S/N) ratio of a read element. According to one embodiment, a read element of a magnetic head has a magnetoresistive effect film (TMR film) between a lower magnetic shield layer and an upper magnetic shield layer, and has a refill film and a magnetic domain control film in both sides of the TMR film. The TMR film is configured by a lower metal layer, an antiferromagnetic layer, a ferromagnetic pinned layer, an intermediate layer, a ferromagnetic free layer, and an upper metal layer. An air-bearing surface protection layer, including a silicon nitride film about 2.0 nm in thickness, is formed on a recording medium facing surface of the TMR film. Since silicon in the silicon nitride film is inactivated by nitrogen, the silicon does not damage the TMR film.