Abstract: This invention relates to a method of fabricating trench cell capacitors which comprises a step of forming a first trench having side walls and a bottom, the side walls are substantially vertical to a surface of a semiconductor substrate of one conductive type and forming an oxide layer on the side walls and bottom of said first trench, a step of forming a silicon nitride layer on the oxide layer of the side walls of said first trench, and removing the oxide layer on the bottom of said first trench by anisotropic etching using said silicon nitride layer as a mask, a step of removing said silicon nitride layer and growing an epitaxial layer of the same conductive type as said semiconductor substrate in said first trench to embed the first trench with this epitaxial layer, and a step of removing the oxide layer remaining on the side wall of said first trench to form a loop-shaped second trench.