Abstract: Provided is a varistor assembly capable of achieving good surge breakdown voltage while suppressing capacitance. The varistor assembly is obtained by connecting a plurality of varistor elements in parallel. Each varistor element includes: a sintered body obtained by sintering a laminate in which varistor layers and internal electrodes are alternately laminated; and a pair of external electrodes provided in a state where the internal electrodes are alternately connected on at least both end faces of this sintered body. Varistor element includes at least a plurality of first group varistor elements in which a value obtained by dividing a surface area of the sintered body by a volume of the sintered body is 1.9 mm?1 or more.

Abstract: A varistor includes an effective layer having first and second surfaces opposite to each other, a first ineffective layer stacked on the first surface of the effective layer, a second ineffective layer stacked on the second surface of the effective layer, and an external electrode. The effective layer includes a ceramic layer having a polycrystalline structure including crystal particles exhibiting voltage nonlinear characteristics, and internal electrodes stacked alternately on the ceramic layer. The thickness of the second ineffective layer is equal to or more than 1.1 times a thickness of the first ineffective layer and equal to or smaller than 6 times the thickness of the first ineffective layer. This varistor has a small size and excellent surge resistance.

Abstract: Provided is a varistor assembly capable of achieving good surge breakdown voltage while suppressing capacitance. The varistor assembly is obtained by connecting a plurality of varistor elements in parallel. Each varistor element includes: a sintered body obtained by sintering a laminate in which varistor layers and internal electrodes are alternately laminated; and a pair of external electrodes provided in a state where the internal electrodes are alternately connected on at least both end faces of this sintered body. Varistor element includes at least a plurality of first group varistor elements in which a value obtained by dividing a surface area of the sintered body by a volume of the sintered body is 1.9 mm?1 or more.

Abstract: A varistor includes an effective layer having first and second surfaces opposite to each other, a first ineffective layer stacked on the first surface of the effective layer, a second ineffective layer stacked on the second surface of the effective layer, and an external electrode. The effective layer includes a ceramic layer having a polycrystalline structure including crystal particles exhibiting voltage nonlinear characteristics, and internal electrodes stacked alternately on the ceramic layer. The thickness of the second ineffective layer is equal to or more than 1.1 times a thickness of the first ineffective layer and equal to or smaller than 6 times the thickness of the first ineffective layer. This varistor has a small size and excellent surge resistance.

Abstract: The present disclosure provides a surface-mount power storage device. A power storage device of the present disclosure includes a solid electrolyte layer; a coating layer that coats a surface of the solid electrolyte layer; a first internal electrode disposed inside the solid electrolyte layer; a first external electrode disposed outside of the solid electrolyte layer and electrically connected to the first internal electrode; a second internal electrode disposed inside the solid electrolyte layer; and a second external electrode disposed outside of the solid electrolyte layer and electrically connected to the second internal electrode. The coating layer has a conductivity less than a conductivity of the solid electrolyte layer.

Abstract: Provided is a solid electrolyte containing a crystal phase having a chemical composition Li7(1+x)?3?2+aO12+3.5x+b, where ? includes Pr, ? includes Zr, ?0.05?x?0.35, ?0.5?a?0.5, and ?0.5?b?0.5.

Abstract: An object of the present disclosure is to provide a common mode choke coil with high impedance and small variation. A common mode choke coil includes magnetic core having winding core part and a pair of flange parts provided on opposite ends of winding core part, external electrodes formed on each of flange parts, a pair of windings wound on winding core part, with each of the ends being drawn out and joined to one of external electrodes, and magnetic plate joined to the pair of flange parts with adhesive. Magnetic plate has joining parts joined to flange parts and opposing part opposing winding core part, and surface roughness of joining parts is smaller than surface roughness of opposing part.

Abstract: A chromaticity of zinc oxide is measured. The durability of a zinc oxide varistor is evaluated based on the chromaticity. This provides a varistor with a high durability stably.

Abstract: A chromaticity of zinc oxide is measured. The durability of a zinc oxide varistor is evaluated based on the chromaticity. This provides a varistor with a high durability stably.

Abstract: Provided is a solid electrolyte containing a crystal phase having a chemical composition Li7(1+x)??2+aO12+3.5x+b, where a includes Pr, ? includes Zr, ?0.05?x0.35, ?0.5?a?0.5, and ?0.5?b?0.5.

Abstract: An object of the present disclosure is to provide a common mode choke coil with high impedance and small variation. A common mode choke coil includes magnetic core having winding core part and a pair of flange parts provided on opposite ends of winding core part, external electrodes formed on each of flange parts, a pair of windings wound on winding core part, with each of the ends being drawn out and joined to one of external electrodes, and magnetic plate joined to the pair of flange parts with adhesive. Magnetic plate has joining parts joined to flange parts and opposing part opposing winding core part, and surface roughness of joining parts is smaller than surface roughness of opposing part.

Abstract: A piezoelectric device includes a substrate, a lower electrode disposed above the substrate, a lower bonding layer disposed on the lower electrode, a piezoelectric layer containing a piezoelectric material disposed on an upper surface of the lower bonding layer, and an upper electrode disposed above the piezoelectric layer. The lower bonding layer includes an electrode material portion containing an electrode material of the lower electrode and a piezoelectric material portion containing a piezoelectric material. The electrode material portion and the piezoelectric material portion interdigitate with each other in the lower bonding layer.

Abstract: A piezoelectric device includes a substrate, a lower electrode disposed above the substrate, a lower bonding layer disposed on the lower electrode, a piezoelectric layer containing a piezoelectric material disposed on an upper surface of the lower bonding layer, and an upper electrode disposed above the piezoelectric layer. The lower bonding layer includes an electrode material portion containing an electrode material of the lower electrode and a piezoelectric material portion containing a piezoelectric material. The electrode material portion and the piezoelectric material portion interdigitate with each other in the lower bonding layer.

Abstract: A voltage nonlinear resistor includes a plurality of N-type ZnO crystal grains, a grain boundary layer, and an oxide grain as a P-type semiconductor. The grain boundary layer is formed between the ZnO crystal grains, and contains at least one kind of oxide of alkaline-earth metal. The oxide grain is disposed between the ZnO crystal grains via the grain boundary layer.

Abstract: A voltage nonlinear resistor includes a plurality of N-type ZnO crystal grains, a grain boundary layer, and an oxide grain as a P-type semiconductor. The grain boundary layer is formed between the ZnO crystal grains, and contains at least one kind of oxide of alkaline-earth metal. The oxide grain is disposed between the ZnO crystal grains via the grain boundary layer.