Abstract: A method of manufacturing a semiconductor device includes a process of removing, by dry etching, an insulating layer which is formed on the top surface of a Ni-containing silicide layer to thereby at least partially expose the Ni-containing silicide layer; and a process of cleaning the exposed portion of the Ni-containing silicide layer using reduced water having a reductive function.

Abstract: Improved control over formation of low k air gaps in interlayer insulating films is achieved by plasma pretreatment of the region of the insulating film to be removed. The intended air gap region is exposed through a mask while the film region to be preserved is shielded by the mask. The intended air gap region is then exposed to a plasma so as to render it more susceptible to removal in a subsequent treatment. One or more Cu interconnects are embedded in both regions of the insulator film. The insulator film in the intended air gap region is then selectively removed to form air gaps adjacent a Cu interconnect in that region.

Abstract: A method of manufacturing a semiconductor device includes a process of removing, by dry etching, an insulating layer which is formed on the top surface of a Ni-containing silicide layer to thereby at least partially expose the Ni-containing silicide layer; and a process of cleaning the exposed portion of the Ni-containing silicide layer using reduced water having a reductive function.

Abstract: A cleaning solution for semiconductor substrates comprising a nonionic surface active agent of the formula (1) and/or the formula (2), a chelating agent and a chelating accelerator: CH3—(CH2)l—O—(CmH2mO)n—X ??(1) wherein l, m and n independently represent a positive number, and X represents a hydrogen atom or a hydrocarbon group; CH3—(CH2)a—O—(CbH2bO)d—(CxH2xO)y—X ??(2) wherein a, b, d, x and y independently represent a positive number, b and x are different, and X represents a hydrogen atom or a hydrocarbon group.

Abstract: There is provided a washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition including an aliphatic polycarboxylic acid and a surfactant, and the washing liquid composition having a contact angle of at most 50 degrees when dropped on the semiconductor substrate. It is thereby possible to effectively remove particles and metals on the surface of a hydrophobic substrate without corroding it.

Abstract: According to this invention, residues generated after selectively removing a low-dielectric-constant film such as SiOC can be effectively removed without damage on an insulating film or metal film. Specifically, residues 126 and 128 generated after forming an interconnect trench in an SiOC film 116 are removed using a fluoride-free weak alkaline amine stripper. After the removing step, the wafer is rinsed with isopropyl alcohol and then dried without drying with pure water.

Abstract: The stripping agent is sprayed from the tip of the nozzle 33 onto the wafer surface, while the first supply nozzle 33 is actuated to scan from the central portion of the wafer to the outer portion thereof. This operation provides the situation, in which the interface of the residual droplet 38 is pulled back from the center of the wafer to the outer portion of the wafer by the surface tension of the stripping agent supplied from the nozzle. Meanwhile, the second supply nozzle 36 also scans at a same scanning speed as the first supply nozzle 33 scans. Vapor IPA is sprayed from the orifice of the second supply nozzle 36. This provides that vapor IPA is sprayed onto the wafer surface immediately after the stripping agent is sprayed thereon from the first supply nozzle 33, and the residual stripping agent on the wafer surface is efficiently replaced with IPA.

Abstract: A photoresist residue remover composition is provided that includes one type or two or more types of fluoride compound and one type or two or more types chosen from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose (but excluding one that includes ammonium fluoride, a polar organic solvent, water, and ascorbic acid). There is also provided use of the photoresist residue remover composition for removing a photoresist residue and a sidewall polymer remaining after dry etching and after ashing.

Abstract: A cleaning solution for semiconductor substrates comprising a nonionic surface active agent of the formula (1) and/or the formula (2), a chelating agent and a chelating accelerator:

Abstract: This invention provides a liquid composition for cleaning a hydrophobic substrate which is used for cleaning a substrate having a surface area on which a water droplet exhibits a contact angle of 60° or more, comprising a phosphonic acid chelating agent having at least two phosphonic groups in one molecule and a polyoxyalkylene alkyl ether type of nonionic surfactant, wherein a droplet of the liquid composition or a dilute aqueous solution thereof exhibits a contact angle of 50° or less to the surface area.

Abstract: The stripping agent is sprayed from the tip of the nozzle 33 onto the wafer surface, while the first supply nozzle 33 is actuated to scan from the central portion of the wafer to the outer portion thereof. This operation provides the situation, in which the interface of the residual droplet 38 is pulled back from the center of the wafer to the outer portion of the wafer by the surface tension of the stripping agent supplied from the nozzle. Meanwhile, the second supply nozzle 36 also scans at a same scanning speed as the first supply nozzle 33 scans. Vapor IPA is sprayed from the orifice of the second supply nozzle 36. This provides that vapor IPA is sprayed onto the wafer surface immediately after the stripping agent is sprayed thereon from the first supply nozzle 33, and the residual stripping agent on the wafer surface is efficiently replaced with IPA.

Abstract: A photoresist residue remover composition is provided that includes one type or two or more types of fluoride compound and one type or two or more types chosen from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose (but excluding one that includes ammonium fluoride, a polar organic solvent, water, and ascorbic acid). There is also provided use of the photoresist residue remover composition for removing a photoresist residue and a sidewall polymer remaining after dry etching and after ashing.

Abstract: There is provided a washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition including an aliphatic polycarboxylic acid and a surfactant, and the washing liquid composition having a contact angle of at most 50 degrees when dropped on the semiconductor substrate. It is thereby possible to effectively remove particles and metals on the surface of a hydrophobic substrate without corroding it.