Abstract: This invention relates to a projection lens system used for transferring circuit or other patterns from masks, etc. on which the circuit patterns are drawn onto semiconductor wafers by projection photolithography, and provides a projection lens system which makes high resolving power of the order of a few micrometers and wide exposure coverages compatible with each other.This projection lens system includes at least two sets of lens groups, each built up of lenses having concave surfaces located opposite to each other, and includes at least one lens surface of positive refractive power between said two sets of lens groups, said two sets of lens groups all satisfying the following conditions:1/L<.vertline..phi..sub.1 <20/L (1)1/L<.vertline..phi..sub.2 <20/L (2)wherein .phi..sub.1 and .phi..sub.2 stand for the respective negative refractive powers of said oppositely located concave surfaces, and L is the distance between object and image.

Abstract: This invention relates to a projection lens system used for transferring circuit or other patterns from masks, etc. on which the circuit patterns are drawn onto semiconductor wafers by projection photolithography, and provides a projection lens system which makes high resolving power of the order of a few micrometers and wide exposure coverages compatible with each other. This projection lens system includes at least two sets of lens groups, each built up of lenses having concave surfaces located opposite to each other, and includes at least one lens surface of positive refractive power between said two sets of lens groups, said two sets of lens groups all satisfying the following conditions:(1) 1/L<.vertline..phi..sub.1 .vertline.<20/L(2) 1/L<.vertline..phi..sub.2 .vertline.<20/Lwherein .phi..sub.1 and .phi..sub.2 stand for the respective negative refractive powers of said oppositely located concave surfaces, and L is the distance between object and image.

Abstract: The present invention relates to a projection lens system well-fit for baking integrated circuit patterns onto silicon wafers using a light source having wavelengths ranging from an ultraviolet wavelength zone to a vacuum ultraviolet wavelength zone. This projection lens system is characterized by comprising a plurality of lens elements including a Fresnel lens element having negative dispersion characteristics, said Fresnel lens being located at a position lying somewhere in said projection lens system with the exception of the pupil thereof and satisfying the following condition:2h.sub.MAX /3.ltoreq.h.Here h.sub.MAX is the maximum height of a marginal ray in said projection lens system, and h is the height of a marginal ray at the position of said Fresnel lens.