Abstract: A photosensitive polymer composition includes (a) a polyamide having a repeating unit represented by the following general formula (I): wherein U represents a tetravalent organic group, V represents a bivalent organic group and p is an integer representing a number of the repeating unit; (b) a compound which generates an acid upon receiving light; and (c) a compound represented by the following general formula (II): wherein m and n are each independently integer of 1 or 2, Rs are each independently hydrogen, alkyl group or acyl group, and R1 and R2 each independently represents fluoroalkyl group having 1 to 3 carbon atoms.

Abstract: A photosensitive polymer composition, having (a) a polymer selected from polyimide precursors and polyimides having an acid group protected by a protecting group and having no amino group (—NH2) at the end; and (b) a compound that generates an acid when exposed to light and capable of deprotecting the protecting group from the acid group, is employed to form layers of a semiconductor device.

Abstract: A photosensitive polymer composition includes (a) a polyamide having a repeating unit represented by the following general formula (I): wherein U represents a tetravalent organic group, V represents a bivalent organic group and p is an integer representing a number of the repeating unit; (b) a compound which generates an acid upon receiving light; and (c) a compound represented by the following general formula (II): wherein m and n are each independently integer of 1 or 2, Rs are each independently hydrogen, alkyl group or acyl group, and R1 and R2 each independently represents fluoroalkyl group having 1 to 3 carbon atoms.

Abstract: A photosensitive polymer composition includes (a) a polyamide having a repeating unit represented by the following general formula (I): wherein U represents a tetravalent organic group, V represents a bivalent organic group and p is an integer representing a number of the repeating unit; (b) a compound which generates an acid upon receiving light; and (c) a compound represented by the following general formula (II): wherein m and n are each independently integer of 1 or 2, Rs are each independently hydrogen, alkyl group or acyl group, and R1 and R2 each independently represents fluoroalkyl group having 1 to 3 carbon atoms.

Abstract: A photosensitive polymer composition, having (a) a polymer selected from polyimide precursors and polyimides having an acid group protected by a protecting group and having no amino group (—NH2) at the end; and (b) a compound that generates an acid when exposed to light and capable of deprotecting the protecting group from the acid group, is employed to form layers of a semiconductor device.

Abstract: A photosensitive polymer composition, having (a) a polymer selected from polyimide precursors and polyimides having an acid group protected by a protecting group and having no amino group (—NH2) at the end; and (b) a compound that generates an acid when exposed to light and capable of deprotecting the protecting group from the acid group, is employed to form layers of a semiconductor device.

Abstract: A photosensitive polymer composition includes (a) a polyamide having a repeating unit represented by the following general formula (I): wherein U represents a tetravalent organic group, V represents a bivalent organic group and p is an integer representing a number of the repeating unit; (b) a compound which generates an acid upon receiving light; and (c) a compound represented by the following general formula (II): wherein m and n are each independently integer of 1 or 2, Rs are each independently hydrogen, alkyl group or acyl group, and R1 and R2 each independently represents fluoroalkyl group having 1 to 3 carbon atoms.

Abstract: A photosensitive polymer composition, having (a) a polymer selected from polyimide precursors and polyimides having an acid group protected by a protecting group and having no amino group (—NH2) at the end; and (b) a compound that generates an acid when exposed to light and capable of deprotecting the protecting group from the acid group, is employed to form layers of a semiconductor device.

Abstract: A photosensitive polymer composition, having (a) a polymer selected from polyimide precursors and polyimides having an acid group protected by a protecting group and having no amino group (—NH2) at the end; and (b) a compound that generates an acid when exposed to light and capable of deprotecting the protecting group from the acid group, is employed to form layers of a semiconductor device.

Abstract: A photosensitive polymer composition, having (a) a polymer selected from polyimide precursors and polyimides having an acid group protected by a protecting group and having no amino group (—NH2) at the end; and (b) a compound that generates an acid when exposed to light and capable of deprotecting the protecting group from the acid group, is employed to form layers of a semiconductor device.