Abstract: A method of manufacturing a silicon carbide semiconductor device. The method includes providing a starting substrate containing silicon carbide, epitaxially growing an epitaxial layer on the starting substrate to thereby form a semiconductor wafer, forming a plurality of scribe lines at a surface of the semiconductor wafer to delineate a plurality of chip regions, forming a mark in the epitaxial layer, the mark being formed in a marking region that is outside the scribe lines, inspecting the epitaxial layer for a crystal defect, forming a device element structure in at least one of the plurality of chip regions, dicing the semiconductor wafer into a plurality of individual semiconductor chips along the plurality of scribe lines, and identifying, as a conforming product candidate, one of the plurality of semiconductor chips that is free of the crystal defect detected during the inspecting.

Abstract: A method of manufacturing a silicon carbide semiconductor device. The method includes epitaxially growing an epitaxial layer on a starting substrate to form a semiconductor wafer, forming a plurality of scribe lines, including a first scribe line, in the epitaxial layer, forming a mark in the first scribe line, inspecting the epitaxial layer for a crystal defect using crystal defect inspection equipment, which recognizes the first scribe line as being a second scribe line, forming a device element structure in the semiconductor wafer, dicing the semiconductor wafer into semiconductor chips along the scribe lines, and identifying, as a conforming product candidate, one of the semiconductor chips that is free of the crystal defect detected during the inspecting. A distance between an edge of the second scribe line and an edge of the mark, when the first and second scribe lines are aligned, is in a range from 10 ?m to 25 ?m.