Patents by Inventor Yoshimaro Fujii
Yoshimaro Fujii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220352026Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: ApplicationFiled: July 19, 2022Publication date: November 3, 2022Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro FUJII, Fumitsugu FUKUYO, Kenshi FUKUMITSU, Naoki UCHIYAMA
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Patent number: 11424162Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: GrantFiled: March 16, 2021Date of Patent: August 23, 2022Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro Fujii, Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama
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Patent number: 11101315Abstract: Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.Type: GrantFiled: October 12, 2017Date of Patent: August 24, 2021Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro Fujii, Terumasa Nagano, Kazuhisa Yamamura, Kenichi Sato, Ryutaro Tsuchiya
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Publication number: 20210210387Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: ApplicationFiled: March 16, 2021Publication date: July 8, 2021Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro FUJII, Fumitsugu FUKUYO, Kenshi FUKUMITSU, Naoki UCHIYAMA
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Patent number: 10879303Abstract: Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.Type: GrantFiled: February 19, 2014Date of Patent: December 29, 2020Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro Fujii, Terumasa Nagano, Kazuhisa Yamamura, Kenichi Sato, Ryutaro Tsuchiya
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Patent number: 10840294Abstract: Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.Type: GrantFiled: February 19, 2014Date of Patent: November 17, 2020Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro Fujii, Terumasa Nagano, Kazuhisa Yamamura, Kenichi Sato, Ryutaro Tsuchiya
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Publication number: 20200203225Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: ApplicationFiled: March 2, 2020Publication date: June 25, 2020Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro FUJII, Fumitsugu FUKUYO, Kenshi FUKUMITSU, Naoki UCHIYAMA
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Patent number: 10622255Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: GrantFiled: July 31, 2018Date of Patent: April 14, 2020Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro Fujii, Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama
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Publication number: 20180350682Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: ApplicationFiled: July 31, 2018Publication date: December 6, 2018Inventors: Yoshimaro FUJII, Fumitsugu FUKUYO, Kenshi FUKUMITSU, Naoki UCHIYAMA
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Patent number: 10068801Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: GrantFiled: June 8, 2017Date of Patent: September 4, 2018Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro Fujii, Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama
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Publication number: 20180090535Abstract: Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.Type: ApplicationFiled: October 12, 2017Publication date: March 29, 2018Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro FUJII, Terumasa NAGANO, Kazuhisa YAMAMURA, Kenichi SATO, Ryutaro TSUCHIYA
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Publication number: 20170271210Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: ApplicationFiled: June 8, 2017Publication date: September 21, 2017Inventors: Yoshimaro FUJII, Fumitsugu FUKUYO, Kenshi FUKUMITSU, Naoki UCHIYAMA
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Patent number: 9711405Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: GrantFiled: December 30, 2015Date of Patent: July 18, 2017Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro Fujii, Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama
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Publication number: 20170200693Abstract: An electronic component includes a base, a laminate of a plurality of conductive metal material layers, and a solder layer made of Au—Sn alloy solder. The laminate is disposed on the base. The solder layer is disposed on the laminate. The laminate includes a surface layer made of Au as the conductive metal material layer constituting an outermost layer. The surface layer includes a solder layer-disposing region in which the solder layer is disposed and a solder layer-empty region in which the solder layer is not disposed. The solder layer-disposing region and the solder layer-empty region are spatially separated from each other.Type: ApplicationFiled: August 5, 2015Publication date: July 13, 2017Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro FUJII, Hiroshi OGURI, Akira SAKAMOTO, Tomoya TAGUCHI
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Patent number: 9553023Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: GrantFiled: August 2, 2016Date of Patent: January 24, 2017Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro Fujii, Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama
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Patent number: 9548246Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: GrantFiled: August 2, 2016Date of Patent: January 17, 2017Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro Fujii, Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama
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Patent number: 9543207Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: GrantFiled: August 2, 2016Date of Patent: January 10, 2017Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro Fujii, Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama
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Patent number: 9543256Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: GrantFiled: August 2, 2016Date of Patent: January 10, 2017Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yoshimaro Fujii, Fumitsugu Fukuyo, Kenshi Fukumitsu, Naoki Uchiyama
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Publication number: 20160343617Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: ApplicationFiled: August 2, 2016Publication date: November 24, 2016Inventors: Yoshimaro FUJII, Fumitsugu FUKUYO, Kenshi FUKUMITSU, Naoki UCHIYAMA
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Publication number: 20160343618Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.Type: ApplicationFiled: August 2, 2016Publication date: November 24, 2016Inventors: Yoshimaro FUJII, Fumitsugu FUKUYO, Kenshi FUKUMITSU, Naoki UCHIYAMA