Abstract: A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.

Abstract: There is provided a technique that includes forming a film containing a first element and oxygen on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a modifying agent to the substrate to form, on the substrate, an adsorption layer containing the modifying agent physically adsorbed on a surface of the substrate; (b) supplying a precursor containing the first element to the substrate and causing the precursor to react with the surface of the substrate to form a first layer containing the first element on the substrate; and (c) supplying an oxidizing agent to the substrate and causing the oxidizing agent to react with the first layer to modify the first layer into a second layer containing the first element and oxygen.

Abstract: There is provided a technique that includes a process container where a plurality of substrates to be processed is arranged in an inside of the process container; and a gas injector including a pipe extending along a direction in which the plurality of substrates is arranged, and configured to supply a gas into the process container, wherein the gas injector includes at least one first injection hole installed along a longitudinal direction of the pipe in a section where the plurality of substrates is arranged, and configured to supply the gas, and a plurality of second injection holes having an area smaller than a flow path cross-sectional area of the pipe, and installed to be opened obliquely to the longitudinal direction at a tip of the pipe.

Abstract: Provided is a technique including: a processing chamber that processes a substrate; a first gas supplier that supplies a metal-containing gas into the processing chamber; a second gas supplier that supplies a first oxygen-containing gas into the processing chamber; and an exhauster including a gas exhaust pipe and a trap that collects a component of the metal-containing gas contained in an exhaust gas using plasma, the exhauster discharging the exhaust gas from the processing chamber.

Abstract: A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.

Abstract: According to some embodiments of the present disclosure, there is provided a technique that includes: a process gas nozzle configured to supply a process gas into a process chamber; two or more inert gas nozzles installed at each of both sides of the process gas nozzle in a circumferential direction of the process chamber and configured to supply an inert gas into the process chamber; a process gas supplier configured to supply the process gas to the process gas nozzle; an inert gas supplier configured to supply the inert gas to each of the inert gas nozzles; and a controller configured to be capable of controlling a flow rate of the process gas supplied from the process gas supplier to the process gas nozzle and a flow rate of the inert gas supplied from the inert gas supplier to each of the inert gas nozzles, respectively.

Abstract: A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.

Abstract: According to one aspect thereof, there is provided a method of manufacturing a semiconductor device, including: forming an oxide film containing a predetermined element on a surface of a substrate provided with a pattern formed thereon by repeatedly performing a cycle including: (a) forming a first layer containing the predetermined element by supplying a source gas containing the predetermined element from an outer periphery of the substrate toward the surface; and (b) forming an oxide layer containing the predetermined element by supplying an oxidizing gas from the outer periphery toward the surface, wherein (a) and (b) are performed non-simultaneously. A supply time of the oxidizing gas is selected such that a thickness distribution of the oxide film becomes a predetermined distribution.

Abstract: Described herein is a technique capable of improving characteristics of a film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) performing (a-1) supplying in parallel a metal-containing gas and a reducing gas that contains silicon and hydrogen and is free of halogen to a substrate in a process chamber, and (a-2) exhausting an inner atmosphere of the process chamber; (b) repeatedly performing (a) a first number of times; (c) supplying a nitrogen-containing gas to the substrate in the process chamber and exhausting the inner atmosphere of the process chamber after performing (b); and (d) repeatedly performing (a) a second number of times.

Abstract: By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.

Abstract: By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.

Abstract: By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.

Abstract: By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate.

Abstract: A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.