Patents by Inventor Yoshimi Adachi
Yoshimi Adachi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9412948Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.Type: GrantFiled: February 19, 2015Date of Patent: August 9, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
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Publication number: 20150171330Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.Type: ApplicationFiled: February 19, 2015Publication date: June 18, 2015Inventors: Hirokazu YAMAGATA, Yoshimi ADACHI, Noriko SHIBATA
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Patent number: 8980660Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.Type: GrantFiled: January 24, 2013Date of Patent: March 17, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
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Patent number: 8367439Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.Type: GrantFiled: February 4, 2011Date of Patent: February 5, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
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Patent number: 8273583Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.Type: GrantFiled: May 7, 2010Date of Patent: September 25, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
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Publication number: 20110136266Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.Type: ApplicationFiled: February 4, 2011Publication date: June 9, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Hirokazu YAMAGATA, Yoshimi ADACHI, Noriko SHIBATA
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Patent number: 7871930Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.Type: GrantFiled: February 22, 2005Date of Patent: January 18, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
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Publication number: 20100233931Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.Type: ApplicationFiled: May 7, 2010Publication date: September 16, 2010Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
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Patent number: 7190114Abstract: A light emitting display device comprises a thin film transistor formed over a substrate, a first insulating film comprising an organic material and formed over the thin film transistor, a second insulating film comprising at least one material selected from the group consisting of aluminum nitride, aluminum nitride oxide, and aluminum oxynitride formed over the first insulating film, an anode formed in contact with the second insulating film, a light emitting layer formed over the anode, and a cathode formed over the light emitting layer.Type: GrantFiled: May 3, 2005Date of Patent: March 13, 2007Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hirokazu Yamagata, Hisao Ikeda, Yoshimi Adachi, Noriko Miyagi, Tatsuya Arao, Koji Ono
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Publication number: 20050197034Abstract: The surface of an anode is made flat by wiping/cleaning of the present invention. Thereafter, an organic compound layer and a cathode are formed to produce a light emitting element. In this way, the distance between the anode and the cathode becomes constant. Therefore, when an electric field is applied to the light emitting element, the current density in the organic compound layer becomes uniform. Thus, it is possible to prevent the deterioration of the organic compound layer and improve the element characteristic thereof.Type: ApplicationFiled: May 3, 2005Publication date: September 8, 2005Inventors: Hirokazu Yamagata, Hisao Ikeda, Yoshimi Adachi, Noriko Miyagi, Tatsuya Arao, Koji Ono
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Publication number: 20050196892Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.Type: ApplicationFiled: February 22, 2005Publication date: September 8, 2005Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
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Patent number: 6909111Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.Type: GrantFiled: December 19, 2001Date of Patent: June 21, 2005Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
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Patent number: 6893887Abstract: The surface of an anode is made flat by wiping/cleaning of the present invention. Thereafter, an organic compound layer and a cathode are formed to produce a light emitting element. In this way, the distance between the anode and the cathode becomes constant. Therefore, when an electric field is applied to the light emitting element, the current density in the organic compound layer becomes uniform. Thus, it is possible to prevent the deterioration of the organic compound layer and improve the element characteristic thereof.Type: GrantFiled: January 17, 2002Date of Patent: May 17, 2005Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hirokazu Yamagata, Hisao Ikeda, Yoshimi Adachi, Noriko Miyagi, Tatsuya Arao, Koji Ono
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Publication number: 20020142697Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.Type: ApplicationFiled: December 19, 2001Publication date: October 3, 2002Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
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Publication number: 20020110940Abstract: The surface of an anode is made flat by wiping/cleaning of the present invention. Thereafter, an organic compound layer and a cathode are formed to produce a light emitting element. In this way, the distance between the anode and the cathode becomes constant. Therefore, when an electric field is applied to the light emitting element, the current density in the organic compound layer becomes uniform. Thus, it is possible to prevent the deterioration of the organic compound layer and improve the element characteristic thereof.Type: ApplicationFiled: January 17, 2002Publication date: August 15, 2002Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hirokazu Yamagata, Hisao Ikeda, Yoshimi Adachi, Noriko Miyagi, Tatsuya Arao, Koji Ono