Patents by Inventor Yoshimi Adachi

Yoshimi Adachi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9412948
    Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
    Type: Grant
    Filed: February 19, 2015
    Date of Patent: August 9, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
  • Publication number: 20150171330
    Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
    Type: Application
    Filed: February 19, 2015
    Publication date: June 18, 2015
    Inventors: Hirokazu YAMAGATA, Yoshimi ADACHI, Noriko SHIBATA
  • Patent number: 8980660
    Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
    Type: Grant
    Filed: January 24, 2013
    Date of Patent: March 17, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
  • Patent number: 8367439
    Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
    Type: Grant
    Filed: February 4, 2011
    Date of Patent: February 5, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
  • Patent number: 8273583
    Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
    Type: Grant
    Filed: May 7, 2010
    Date of Patent: September 25, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
  • Publication number: 20110136266
    Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
    Type: Application
    Filed: February 4, 2011
    Publication date: June 9, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hirokazu YAMAGATA, Yoshimi ADACHI, Noriko SHIBATA
  • Patent number: 7871930
    Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
    Type: Grant
    Filed: February 22, 2005
    Date of Patent: January 18, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
  • Publication number: 20100233931
    Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
    Type: Application
    Filed: May 7, 2010
    Publication date: September 16, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
  • Patent number: 7190114
    Abstract: A light emitting display device comprises a thin film transistor formed over a substrate, a first insulating film comprising an organic material and formed over the thin film transistor, a second insulating film comprising at least one material selected from the group consisting of aluminum nitride, aluminum nitride oxide, and aluminum oxynitride formed over the first insulating film, an anode formed in contact with the second insulating film, a light emitting layer formed over the anode, and a cathode formed over the light emitting layer.
    Type: Grant
    Filed: May 3, 2005
    Date of Patent: March 13, 2007
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hirokazu Yamagata, Hisao Ikeda, Yoshimi Adachi, Noriko Miyagi, Tatsuya Arao, Koji Ono
  • Publication number: 20050197034
    Abstract: The surface of an anode is made flat by wiping/cleaning of the present invention. Thereafter, an organic compound layer and a cathode are formed to produce a light emitting element. In this way, the distance between the anode and the cathode becomes constant. Therefore, when an electric field is applied to the light emitting element, the current density in the organic compound layer becomes uniform. Thus, it is possible to prevent the deterioration of the organic compound layer and improve the element characteristic thereof.
    Type: Application
    Filed: May 3, 2005
    Publication date: September 8, 2005
    Inventors: Hirokazu Yamagata, Hisao Ikeda, Yoshimi Adachi, Noriko Miyagi, Tatsuya Arao, Koji Ono
  • Publication number: 20050196892
    Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
    Type: Application
    Filed: February 22, 2005
    Publication date: September 8, 2005
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
  • Patent number: 6909111
    Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
    Type: Grant
    Filed: December 19, 2001
    Date of Patent: June 21, 2005
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
  • Patent number: 6893887
    Abstract: The surface of an anode is made flat by wiping/cleaning of the present invention. Thereafter, an organic compound layer and a cathode are formed to produce a light emitting element. In this way, the distance between the anode and the cathode becomes constant. Therefore, when an electric field is applied to the light emitting element, the current density in the organic compound layer becomes uniform. Thus, it is possible to prevent the deterioration of the organic compound layer and improve the element characteristic thereof.
    Type: Grant
    Filed: January 17, 2002
    Date of Patent: May 17, 2005
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hirokazu Yamagata, Hisao Ikeda, Yoshimi Adachi, Noriko Miyagi, Tatsuya Arao, Koji Ono
  • Publication number: 20020142697
    Abstract: A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
    Type: Application
    Filed: December 19, 2001
    Publication date: October 3, 2002
    Inventors: Hirokazu Yamagata, Yoshimi Adachi, Noriko Shibata
  • Publication number: 20020110940
    Abstract: The surface of an anode is made flat by wiping/cleaning of the present invention. Thereafter, an organic compound layer and a cathode are formed to produce a light emitting element. In this way, the distance between the anode and the cathode becomes constant. Therefore, when an electric field is applied to the light emitting element, the current density in the organic compound layer becomes uniform. Thus, it is possible to prevent the deterioration of the organic compound layer and improve the element characteristic thereof.
    Type: Application
    Filed: January 17, 2002
    Publication date: August 15, 2002
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hirokazu Yamagata, Hisao Ikeda, Yoshimi Adachi, Noriko Miyagi, Tatsuya Arao, Koji Ono