Abstract: Polyorganosiloxane which are useful as resist materials for use in microprocesses such as large scale integration device fabrication are those of the formula ##STR1## where R.sup.1 is a monovalent hydrocarbon group having 1 to 6 carbon atoms; R.sup.2 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 6 carbon atoms; x and z are positive numbers; y is zero or a positive number; and x, y, and z have values such that their ratios are 0.3.ltoreq.(x+y)/z.ltoreq.4; and zero .ltoreq.y/x.ltoreq.100. The polyorganosiloxanes can be prepared by cohydrolysis or condensation reactions of hydrolyzable group-containing organosilanes or disiloxanes with tetrafunctional hydrolyzable silanes.

Abstract: Alkali-soluble organopolysiloxanes useful in the alkali-developing resist materials for use in microprocesses in LSI device fabrication have the following general formula ##STR1## where A is a hydroxyphenyl group; R is an alkylene group having 1 to 4 carbon atoms; n is zero or one; R.sup.1 is an alkyl group having 1 to 4 carbon atoms; x and z are positive numbers; y is zero or a positive number; x, y, and z have values such that their ratios are 0.3.ltoreq.(x+y)/z.ltoreq.4; and zero.ltoreq.y/x.ltoreq.5.