Abstract: A power element package includes a semiconductor chip, radiating members, a mold resin member, a lead terminal for control signals, and lead terminals for large electric current. On a heat accepting surface of the radiating member, an insulating layer and a conductive layer are disposed. The lead terminal for control signals is electrically connected with a gate of the semiconductor chip through the conductive layer. An emitter of the semiconductor chip is electrically connected through a solder connection member with a non-insulating portion of the heat accepting surface.

Abstract: A semiconductor device includes a heat generation element; a bonding member; first and second heat radiation plates disposed on first and second sides of the heat generation element through the bonding member; a heat radiation block disposed between the first heat radiation plate and the heat generation element through the bonding member; and a resin mold. The heat radiation block has a thickness in a range between 0.5 mm and 1.5 mm. The semiconductor device has high reliability of the bonding member.

Abstract: A semiconductor device includes: a semiconductor chip; a first metal plate disposed on one side of the chip through a first solder layer; a second metal plate disposed on the other side of the chip through a second solder layer; a third metal plate disposed on the second metal plate through a third solder layer; supporting means for holding at least one of distances between the chip and the first metal plate and between the chip and the second metal plate; and excess solder accommodation means for accommodating excess solder in a case where the third solder layer includes the excess solder.

Abstract: A semiconductor device includes a semiconductor chip that generates heat in operation, a pair of heat sinks for cooling the chip, and a mold resin, in which the chip and the heat sinks are embedded. The thickness t1 of the chip and the thickness t2 of one of heat sinks that is joined to the chip using a solder satisfy the equation of t2/t1?5. Furthermore, the thermal expansion coefficient ?1 of the heat sinks and the thermal expansion coefficient ?2 of the mold resin satisfy the equation of 0.5??2/?1?1.5. In addition, the surface of the chip that faces the solder has a roughness Ra that satisfies the equation of Ra?500 nm. Moreover, the solder is a Sn-based solder to suppress relaxation of a compressive stress in the chip, which is caused by the creeping of the solder.

Abstract: In a semiconductor device having semiconductor chips, a lower heat sink which is joined on the principal rear surface side of the semiconductor chips and an upper heat sink which is joined on the principal front surface side of the semiconductor chips, wherein substantially the whole device is encapsulated with a molded resin, the thick-walled portion of a resin lying around a mounted portion is provided with holes which are resin-flow hindering portions for hindering the flow of the resin during the molding thereof, whereby air bubbles are prevented from appearing in the resin within the mounted portion.

Abstract: Semiconductor equipment includes: a semiconductor device; a pair of upper and lower heat radiation plates; and a heat radiation block. The heat radiation block has a planar shape, which is smaller than a planer shape of the semiconductor device. The semiconductor device includes a heat generation portion facing the heat radiation block. The heat generation portion has a periphery edge, which is determined such that a distance between the periphery edge of the heat generation portion and a periphery edge of the heat radiation block is equal to or shorter than 1.0 mm.

Abstract: A package type semiconductor device comprising: a semiconductor chip having a semiconductor part; a main electrode for connecting to a first region of the semiconductor part; a control wiring layer for connecting to a second region of the semiconductor part; a blocking member electrically isolated from the control wiring layer; a first metallic layer; a protection film disposed among the main electrode, the control wiring layer and the blocking member; and a metal block for connecting to the main electrode through the first metallic layer. The chip, the main electrode, the control wiring layer, the blocking member, and the metal block are packaged. The blocking member is disposed between the main electrode and the control wiring layer.

Abstract: A semiconductor element, and a pair of insulation substrates sandwiching the semiconductor element therebetween forms a substrate unit. The substrate unit is press-fitted in a recess provided between first radiation block and cooling block. The press-fitting of the substrate unit is performed by a second radiation block which is screwed to push the first radiation block toward the cooling block. A high thermal-conductive radiation material is disposed at the interfaces between each of the insulation substrates and each of the blocks to keep adhesiveness therebetween.

Abstract: A semiconductor device includes two semiconductor chips that are interposed between a pair of radiation members, and thermally and electrically connected to the radiation members. One of the radiation members has two protruding portions and front ends of the protruding portions are connected to principal electrodes of the semiconductor chips. The radiation members are made of a metallic material containing Cu or Al as a main component. The semiconductor chips and the radiation members are sealed with resin with externally exposed radiation surfaces.

Abstract: A stick-type ignition coil have a central core, a cylindrical member, primary spool, primary coil, secondary spool, secondary coil, outer core and a resin insulator. The two longitudinal end corners and faces of the core are covered by respective buffer members. The inner circumferential corners of the outer core is supported by ring members. Some of the members disposed radially inside and other members disposed radially outside of the inside members are held slidably to each other in the ignition coil. The spools are made of resin containing a rubber in excess of 5 weight percent and reinforcing materials. The resin insulator contains a flexible material.

Abstract: A stick-type ignition coil have a central core, a cylindrical member, primary spool, primary coil, secondary spool, secondary coil, outer core and a resin insulator. The two longitudinal end corners and faces of the core are covered by respective buffer members. The inner circumferential corners of the outer core is supported by ring members. Some of the members disposed radially inside and other members disposed radially outside of the inside members are held slidably to each other in the ignition coil. The spools are made of resin containing a rubber in excess of 5 weight percent and reinforcing materials. The resin insulator contains a flexible material.

Abstract: A stick-type ignition coil have a central core, a cylindrical member, primary spool, primary coil, secondary spool, secondary coil, outer core and a resin insulator. The two longitudinal end corners and faces of the core are covered by respective buffer members. The inner circumferential corners of the outer core is supported by ring members. Some of the members disposed radially inside and other members disposed radially outside of the inside members are held slidably to each other in the ignition coil. The spools are made of resin containing a rubber in excess of 5 weight percent and reinforcing materials. The resin insulator contains a flexible material.

Abstract: A method for manufacturing a connection construction having a first and a second connection members bonded therebetween with a solder layer includes the steps of: sandwiching the solder layer between the first and the second connection members; decompressing the solder layer down to a first pressure with maintaining a first temperature, which is lower than a solidus of the solder; heating the solder layer up to a second temperature with maintaining the first pressure, the second temperature being higher than a luquidus of the solder; compressing the solder layer up to a second pressure with maintaining the second temperature, the second pressure being higher than the first pressure; and hardening the solder with maintaining the second pressure.

Abstract: A semiconductor device includes a semiconductor chip, a first heat sink, a second heat sink, and a mold resin. The first heat sink is electrically and thermally connected to a surface of the semiconductor chip for functioning as an electrode for the semiconductor chip and releasing the heat generated by the semiconductor chip. The second heat sink is electrically and thermally connected to another surface of the semiconductor chip for functioning as another electrode for the semiconductor chip and releasing the heat. The semiconductor chip and the first and second heat sinks are covered with the mold resin such that the heat sinks are exposed on a substantially flat surface of the mold resin.

Abstract: In a semiconductor device having semiconductor chips, a lower heat sink which is joined on the principal rear surface side of the semiconductor chips and an upper heat sink which is joined on the principal front surface side of the semiconductor chips, wherein substantially the whole device is encapsulated with a molded resin, the thick-walled portion of a resin lying around a mounted portion is provided with holes which are resin-flow hindering portions for hindering the flow of the resin during the molding thereof, whereby air bubbles are prevented from appearing in the resin within the mounted portion.

Abstract: A semiconductor device includes: a semiconductor chip; a first metal plate disposed on one side of the chip through a first solder layer; a second metal plate disposed on the other side of the chip through a second solder layer; a third metal plate disposed on the second metal plate through a third solder layer; supporting means for holding at least one of distances between the chip and the first metal plate and between the chip and the second metal plate; and excess solder accommodation means for accommodating excess solder in a case where the third solder layer includes the excess solder.

Abstract: A package type semiconductor device comprising: a semiconductor chip having a semiconductor part; a main electrode for connecting to a first region of the semiconductor part; a control wiring layer for connecting to a second region of the semiconductor part; a blocking member electrically isolated from the control wiring layer; a first metallic layer; a protection film disposed among the main electrode, the control wiring layer and the blocking member; and a metal block for connecting to the main electrode through the first metallic layer. The chip, the main electrode, the control wiring layer, the blocking member, and the metal block are packaged. The blocking member is disposed between the main electrode and the control wiring layer.

Abstract: A stick-type ignition coil have a central core, a cylindrical member, primary spool, primary coil, secondary spool, secondary coil, outer core and a resin insulator. The two longitudinal end corners and faces of the core are covered by respective buffer members. The inner circumferential corners of the outer core is supported by ring members. Some of the members disposed radially inside and other members disposed radially outside of the inside members are held slidably to each other in the ignition coil. The spools are made of resin containing a rubber in excess of 5 weight percent and reinforcing materials. The resin insulator contains a flexible material.

Abstract: A semiconductor device includes a heat generation element; a bonding member; first and second heat radiation plates disposed on first and second sides of the heat generation element through the bonding member; a heat radiation block disposed between the first heat radiation plate and the heat generation element through the bonding member; and a resin mold. The heat radiation block has a thickness in a range between 0.5 mm and 1.5 mm. The semiconductor device has high reliability of the bonding member.

Abstract: A power element package includes a semiconductor chip, radiating members, a mold resin member, a lead terminal for control signals, and lead terminals for large electric current. On a heat accepting surface of the radiating member, an insulating layer and a conductive layer are disposed. The lead terminal for control signals is electrically connected with a gate of the semiconductor chip through the conductive layer. An emitter of the semiconductor chip is electrically connected through a solder connection member with a non-insulating portion of the heat accepting surface.