Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g. plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Abstract: A semiconductor manufacturing apparatus comprising an integrated measuring instrument for measuring the form or size of the element to be formed into a wafer, an etching unit for etching the wafer by making use of plasma generated under reduced pressure, an ashing unit for ashing the etched wafer, a wetting unit for wetting the etched wafer, a drying unit for drying the wafer which has gone through the wetting treatment, a transport means whereby the wafers housed in a wafer cassette are transported one by one successively to said metrology and each treating unit, and a transport chamber provided with a wafer cassette inlet for receiving a cassette containing sheets of wafer to be etched, in which said metrology, etching unit, ashing unit, wetting unit, drying unit and transport means are connected by a depressurizable transport passage.

Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Abstract: A semiconductor manufacturing apparatus comprising an integrated measuring instrument for measuring the form or size of the element to be formed into a wafer, an etching unit for etching the wafer by making use of plasma generated under reduced pressure, an ashing unit for ashing the etched wafer, a wetting unit for wetting the etched wafer, a drying unit for drying the wafer which has gone through the wetting treatment, a transport means whereby the wafers housed in a wafer cassette are transported one by one successively to said metrology and each treating unit, and a transport chamber provided with a wafer cassette inlet for receiving a cassette containing sheets of wafer to be etched, in which said metrology, etching unit, ashing unit, wetting unit, drying unit and transport means are connected by a depressurizable transport passage.

Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Abstract: A method of processing specimens, an apparatus therefor, and a method of manufacture of a magnetic head are provided wherein a complicated conventional post processing step for removing corrosion products is eliminated by a corrosion prevention processing for removing only a residual chlorine compound produced in the gas plasma etching. More specifically, the method is comprised of the steps of: forming a lamination film including a seed layer made of NiFe alloy, an upper magnetic pole made of NiFe alloy connected to the seed layer, a gap layer made of oxide film in close contact with the seed layer, and a shield layer made of NiFe alloy in close contact with the gap layer; plasma-etching the seed layer with a gas which contains chlorine using the upper magnetic pole as a mask; and after that removing the residual chlorine compound by a plasma post treatment with a gas plasma which contains H2O or methanol.

Abstract: A method of processing specimens, an apparatus therefor, and a method of manufacture of a magnetic head are provided wherein a complicated conventional post processing step for removing corrosion products is eliminated by a corrosion prevention processing for removing only a residual chlorine compound produced in the gas plasma etching. More specifically, the method is comprised of the steps of: forming a lamination film including a seed layer made of NiFe alloy, an upper magnetic pole made of NiFe alloy connected to the seed layer, a gap layer made of oxide film in close contact with the seed layer, and a shield layer made of NiFe alloy in close contact with the gap layer; plasma-etching the seed layer with a gas which contains chlorine using the upper magnetic pole as a mask; and after that removing the residual chlorine compound by a plasma post treatment with a gas plasma which contains H2O or methanol.

Abstract: A method of processing specimens, an apparatus therefor, and a method of manufacture of a magnetic head are provided wherein a complicated conventional post processing step for removing corrosion products is eliminated by a corrosion prevention processing of the invention for removing only a residual chlorine compound produced in the gas plasma etching. More specifically, the method of the invention is comprised of the steps of: forming a lamination film including a seed layer made of NiFe alloy, an upper magnetic pole made of NiFe alloy connected to the seed layer, a gap layer made of oxide film in close contact with the seed layer, and a shield layer made of NiFe alloy in close contact with the gap layer; plasma-etching the seed layer with a gas which contains chlorine using the upper magnetic pole as a mask; and after that removing the residual chlorine compound by a plasma post treatment with a gas plasma which contains H2O or methanol.

Abstract: A method of processing a specimen, an apparatus therefor and a method of manufacture of a magnetic head using the same are provided, featuring a high etching rate at a low specimen temperature, and a simple corrosion prevention treatment for removing a residual chlorine component by liquid rinsing, and thereby eliminating provision of a post treatment step to remove a corrosion product. The method comprises the steps of: forming a lamination layer comprising a seed layer of NiFe alloy, an upper magnetic pole of NiFe alloy connected to the seed layer, a gas layer of an oxide film in close contact with the seed layer, and a shield layer of NiFe alloy in close contact with the gap layer; plasma-etching the seed layer using a gas which contains chlorine with the upper magnetic pole used as its mask; and removing a residual chlorine component by liquid rinsing, following by a drying process.

Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Abstract: A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.

Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus, the samples being selectively etched through use of a resist mask), (b) for removing (ashing) the resist mask, (c) for wet-processing of the samples and (d) for dry-processing the samples. Samples are passed sequentially from a supply cassette (containing a plurality of samples) to the plasma etching apparatus, through the other apparatus and to a discharge cassette (which can hold a plurality of the samples). At least two of the samples can be processed simultaneously in a path from (and including), the plasma etching apparatus to (and including) the wet-processing structure.