Patents by Inventor Yoshimichi Mitamura
Yoshimichi Mitamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10409164Abstract: A heat-reactive resist material contains copper oxide, and silicon or silicon oxide, and is formed so that the content of silicon or silicon oxide in the heat-reactive resist material is 4.0 mol % or more less than 10.0 mol % in terms of mole of silicon. A heat-reactive resist layer is formed using the heat-reactive resist material, is exposed, and then, is developed with a developing solution. Using the obtained heat-reactive resist layer as a mask, dry etching is performed on a substrate with a fluorocarbon to manufacture a mold having a concavo-convex shape on the substrate surface. At this point, it is possible to control a fine pattern comprised of the concavo-convex shape.Type: GrantFiled: July 3, 2018Date of Patent: September 10, 2019Assignee: ASAHI KASEI KABUSHIKI KAISHAInventors: Yoshimichi Mitamura, Takuto Nakata
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Patent number: 10399254Abstract: A seamless mold manufacturing method of the invention is a seamless mold manufacturing method having the steps of forming a thermal reaction type resist layer on a sleeve-shaped mold, and exposing using a laser and developing the thermal reaction type resist layer and thereby forming a fine mold pattern, and is characterized in that the thermal reaction type resist layer is comprised of a thermal reaction type resist having a property of reacting in predetermined light intensity or more in a light intensity distribution in a spot diameter of the laser.Type: GrantFiled: December 31, 2015Date of Patent: September 3, 2019Assignee: ASAHI KASEI KABUSHIKI KAISHAInventors: Masaru Suzuki, Yoshimichi Mitamura, Masatoshi Maeda
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Publication number: 20180314159Abstract: A heat-reactive resist material contains copper oxide, and silicon or silicon oxide, and is formed so that the content of silicon or silicon oxide in the heat-reactive resist material is 4.0 mol % or more less than 10.0 mol % in terms of mole of silicon. A heat-reactive resist layer is formed using the heat-reactive resist material, is exposed, and then, is developed with a developing solution. Using the obtained heat-reactive resist layer as a mask, dry etching is performed on a substrate with a fluorocarbon to manufacture a mold having a concavo-convex shape on the substrate surface. At this point, it is possible to control a fine pattern comprised of the concavo-convex shape.Type: ApplicationFiled: July 3, 2018Publication date: November 1, 2018Applicant: ASAHI KASEI E-MATERIALS CORPORATIONInventors: Yoshimichi MITAMURA, Takuto NAKATA
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Patent number: 9701044Abstract: A fine concavo-convex structure product (10) is provided with an etching layer (11), and a resist layer (12) comprised of a heat-reactive resist material for dry etching provided on the etching layer (11), a concavo-convex structure associated with opening portions (12a) formed in the resist layer (12) is formed in the etching layer (11), a pattern pitch P of a fine pattern of the concavo-convex structure ranges from 1 nm to 10 ?m, a pattern depth H of the fine pattern ranges from 1 nm to 10 ?m, and a pattern cross-sectional shape of the fine pattern is a trapezoid, a triangle or a mixed shape thereof. The heat-reactive resist material for dry etching has, as a principal constituent element, at least one species selected from the group consisting of Cu, Nb, Sn, Mn, oxides thereof, nitrides thereof and NiBi.Type: GrantFiled: March 12, 2015Date of Patent: July 11, 2017Assignee: ASAHI KASEI KABUSHIKI KAISHAInventor: Yoshimichi Mitamura
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Patent number: 9623590Abstract: A fine concavo-convex structure product (10) is provided with an etching layer (11), and a resist layer (12) comprised of a heat-reactive resist material for dry etching provided on the etching layer (11), a concavo-convex structure associated with opening portions (12a) formed in the resist layer (12) is formed in the etching layer (11), a pattern pitch P of a fine pattern of the concavo-convex structure ranges from 1 nm to 10 ?m, a pattern depth H of the fine pattern ranges from 1 nm to 10 ?m, and a pattern cross-sectional shape of the fine pattern is a trapezoid, a triangle or a mixed shape thereof. The heat-reactive resist material for dry etching has, as a principal constituent element, at least one species selected from the group consisting of Cu, Nb, Sn, Mn, oxides thereof, nitrides thereof and NiBi.Type: GrantFiled: January 24, 2013Date of Patent: April 18, 2017Assignee: ASAHI KASEI E-MATERIALS CORPORATIONInventor: Yoshimichi Mitamura
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Patent number: 9614136Abstract: In an optical substrate (1), a concave-convex structure (12) including a plurality of independent convex portions (131 to 134) and concave portions (14) provided between the convex portions (131 to 134) is provided in a surface. The average interval Pave between the adjacent convex portions (131 to 134) in the concave-convex structure (12) satisfies 50 nm?Pave?1500 nm, and the convex portion (133) having a convex portion height hn satisfying 0.6 h?hn?0 h for the average convex portion height Have is present with a probability Z satisfying 1/10000?Z?1/5. When the optical substrate (1) is used in a semiconductor light-emitting element, dislocations in a semiconductor layer are dispersed to reduce the dislocation density, and thus internal quantum efficiency IQE is improved, and a waveguide mode is removed by light scattering and thus the light the extraction efficiency LEE is increased, with the result that the efficiency of light emission of the semiconductor light-emitting element is enhanced.Type: GrantFiled: March 29, 2013Date of Patent: April 4, 2017Assignee: ASAHI KASEI KABUSHIKI KAISHAInventors: Jun Koike, Yoshimichi Mitamura, Fujito Yamaguchi
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Patent number: 9597822Abstract: A fine concavo-convex structure product (10) is provided with an etching layer (11), and a resist layer (12) comprised of a heat-reactive resist material for dry etching provided on the etching layer (11), a concavo-convex structure associated with opening portions (12a) formed in the resist layer (12) is formed in the etching layer (11), a pattern pitch P of a fine pattern of the concavo-convex structure ranges from 1 nm to 10 ?m, a pattern depth H of the fine pattern ranges from 1 nm to 10 ?m, and a pattern cross-sectional shape of the fine pattern is a trapezoid, a triangle or a mixed shape thereof. The heat-reactive resist material for dry etching has, as a principal constituent element, at least one species selected from the group consisting of Cu, Nb, Sn, Mn, oxides thereof, nitrides thereof and NiBi.Type: GrantFiled: March 12, 2015Date of Patent: March 21, 2017Assignee: ASAKI KASEI E-MATERIAL CORPORATIONInventor: Yoshimichi Mitamura
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Publication number: 20160114503Abstract: A seamless mold manufacturing method of the invention is a seamless mold manufacturing method having the steps of forming a thermal reaction type resist layer on a sleeve-shaped mold, and exposing using a laser and developing the thermal reaction type resist layer and thereby forming a fine mold pattern, and is characterized in that the thermal reaction type resist layer is comprised of a thermal reaction type resist having a property of reacting in predetermined light intensity or more in a light intensity distribution in a spot diameter of the laser.Type: ApplicationFiled: December 31, 2015Publication date: April 28, 2016Applicant: ASAHI KASEI E-MATERIALS CORPORATIONInventors: Masaru Suzuki, Yoshimichi MITAMURA, Masatoshi MAEDA
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Patent number: 9257142Abstract: A heat-reactive resist material of the invention is characterized in that the boiling point of the fluoride of the element is 200° C. or more. By this means, it is possible to achieve the heat-reactive resist material having high resistance to dry etching using fluorocarbons to form a pattern with the deep groove depth.Type: GrantFiled: October 13, 2009Date of Patent: February 9, 2016Assignee: ASAHI KASEI E-MATERIALS CORPORATIONInventors: Yoshimichi Mitamura, Kazuyuki Furuya, Norikiyo Nakagawa, Masatoshi Maeda
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Patent number: 9139771Abstract: In order to provide a copper oxide etchant and an etching method using the same capable of selectively etching exposure/non-exposure portions when laser light exposure is performed by using copper oxide as a thermal-reactive resist material, the copper oxide etchant for selectively etching copper oxides having different oxidation numbers in a copper oxide-containing layer containing the copper oxide as a main component contains at least a chelating agent or salts thereof.Type: GrantFiled: December 5, 2013Date of Patent: September 22, 2015Assignee: ASAHI KASEI E-MATERIALS CORPORATIONInventors: Norikiyo Nakagawa, Takuto Nakata, Yoshimichi Mitamura
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Publication number: 20150183152Abstract: A fine concavo-convex structure product (10) is provided with an etching layer (11), and a resist layer (12) comprised of a heat-reactive resist material for dry etching provided on the etching layer (11), a concavo-convex structure associated with opening portions (12a) formed in the resist layer (12) is formed in the etching layer (11), a pattern pitch P of a fine pattern of the concavo-convex structure ranges from 1 nm to 10 ?m, a pattern depth H of the fine pattern ranges from 1 nm to 10 ?m, and a pattern cross-sectional shape of the fine pattern is a trapezoid, a triangle or a mixed shape thereof. The heat-reactive resist material for dry etching has, as a principal constituent element, at least one species selected from the group consisting of Cu, Nb, Sn, Mn, oxides thereof, nitrides thereof and NiBi.Type: ApplicationFiled: March 12, 2015Publication date: July 2, 2015Applicant: ASAHI KASEI E-MATERIALS CORPORATIONInventor: Yoshimichi MITAMURA
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Publication number: 20150183136Abstract: A fine concavo-convex structure product (10) is provided with an etching layer (11), and a resist layer (12) comprised of a heat-reactive resist material for dry etching provided on the etching layer (11), a concavo-convex structure associated with opening portions (12a) formed in the resist layer (12) is formed in the etching layer (11), a pattern pitch P of a fine pattern of the concavo-convex structure ranges from 1 nm to 10 ?m, a pattern depth H of the fine pattern ranges from 1 nm to 10 ?m, and a pattern cross-sectional shape of the fine pattern is a trapezoid, a triangle or a mixed shape thereof. The heat-reactive resist material for dry etching has, as a principal constituent element, at least one species selected from the group consisting of Cu, Nb, Sn, Mn, oxides thereof, nitrides thereof and NiBi.Type: ApplicationFiled: March 12, 2015Publication date: July 2, 2015Applicant: ASAHI KASEI E-MATERIALS CORPORATIONInventor: Yoshimichi MITAMURA
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Publication number: 20150048380Abstract: In an optical substrate (1), a concave-convex structure (12) including a plurality of independent convex portions (131 to 134) and concave portions (14) provided between the convex portions (131 to 134) is provided in a surface. The average interval Pave between the adjacent convex portions (131 to 134) in the concave-convex structure (12) satisfies 50 nm?Pave?1500 nm, and the convex portion (133) having a convex portion height hn satisfying 0.6 h?hn?0 h for the average convex portion height Have is present with a probability Z satisfying 1/10000?Z?1/5. When the optical substrate (1) is used in a semiconductor light-emitting element, dislocations in a semiconductor layer are dispersed to reduce the dislocation density, and thus internal quantum efficiency IQE is improved, and a waveguide mode is removed by light scattering and thus the light the extraction efficiency LEE is increased, with the result that the efficiency of light emission of the semiconductor light-emitting element is enhanced.Type: ApplicationFiled: March 29, 2013Publication date: February 19, 2015Applicant: ASAHI KASEI E-MATERIALS CORPORATIONInventors: Jun Koike, Yoshimichi Mitamura, Fujito Yamaguchi
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Publication number: 20150017275Abstract: A fine concavo-convex structure product (10) is provided with an etching layer (11), and a resist layer (12) comprised of a heat-reactive resist material for dry etching provided on the etching layer (11), a concavo-convex structure associated with opening portions (12a) formed in the resist layer (12) is formed in the etching layer (11), a pattern pitch P of a fine pattern of the concavo-convex structure ranges from 1 nm to 10 ?m, a pattern depth H of the fine pattern ranges from 1 nm to 10 ?m, and a pattern cross-sectional shape of the fine pattern is a trapezoid, a triangle or a mixed shape thereof. The heat-reactive resist material for dry etching has, as a principal constituent element, at least one species selected from the group consisting of Cu, Nb, Sn, Mn, oxides thereof, nitrides thereof and NiBi.Type: ApplicationFiled: January 24, 2013Publication date: January 15, 2015Inventor: Yoshimichi Mitamura
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Publication number: 20140314898Abstract: A heat-reactive resist material contains copper oxide, and silicon or silicon oxide, and is formed so that the content of silicon or silicon oxide in the heat-reactive resist material is 4.0 mol % or more less than 10.0 mol % in terms of mole of silicon. A heat-reactive resist layer is formed using the heat-reactive resist material, is exposed, and then, is developed with a developing solution. Using the obtained heat-reactive resist layer as a mask, dry etching is performed on a substrate with a fluorocarbon to manufacture a mold having a concavo-convex shape on the substrate surface. At this point, it is possible to control a fine pattern comprised of the concavo-convex shape.Type: ApplicationFiled: November 16, 2012Publication date: October 23, 2014Inventors: Yoshimichi Mitamura, Takuto Nakata
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Publication number: 20140091058Abstract: In order to provide a copper oxide etchant and an etching method using the same capable of selectively etching exposure/non-exposure portions when laser light exposure is performed by using copper oxide as a thermal-reactive resist material, the copper oxide etchant for selectively etching copper oxides having different oxidation numbers in a copper oxide-containing layer containing the copper oxide as a main component contains at least a chelating agent or salts thereof.Type: ApplicationFiled: December 5, 2013Publication date: April 3, 2014Applicant: ASAHI KASEI E-MATERIALS CORPORATIONInventors: Norikiyo NAKAGAWA, Takuto NAKATA, Yoshimichi MITAMURA
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Publication number: 20130026134Abstract: In order to provide a copper oxide etchant and an etching method using the same capable of selectively etching exposure/non-exposure portions when laser light exposure is performed by using copper oxide as a thermal-reactive resist material, the copper oxide etchant for selectively etching copper oxides having different oxidation numbers in a copper oxide-containing layer containing the copper oxide as a main component contains at least a chelating agent or salts thereof.Type: ApplicationFiled: January 14, 2011Publication date: January 31, 2013Applicant: ASAHI KASEI KABUSHIKI KAISHAInventors: Norikiyo Nakagawa, Takuto Nakata, Yoshimichi Mitamura
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Publication number: 20110195142Abstract: A heat-reactive resist material of the invention is characterized in that the boiling point of the fluoride of the element is 200° C. or more. By this means, it is possible to achieve the heat-reactive resist material having high resistance to dry etching using fluorocarbons to form a pattern with the deep groove depth.Type: ApplicationFiled: October 13, 2009Publication date: August 11, 2011Applicant: ASAHI KASEI KABUSHIKI KAISHAInventors: Yoshimichi Mitamura, Kazuyuki Furuya, Norikiyo Nakagawa, Masatoshi Maeda
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Publication number: 20110027408Abstract: A seamless mold manufacturing method of the invention is a seamless mold manufacturing method having the steps of forming a thermal reaction type resist layer on a sleeve-shaped mold, and exposing using a laser and developing the thermal reaction type resist layer and thereby forming a fine mold pattern, and is characterized in that the thermal reaction type resist layer is comprised of a thermal reaction type resist having a property of reacting in predetermined light intensity or more in a light intensity distribution in a spot diameter of the laser.Type: ApplicationFiled: January 23, 2009Publication date: February 3, 2011Inventors: Masaru Suzuki, Yoshimichi Mitamura, Masatoshi Maeda
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Patent number: 7717404Abstract: A humidifying apparatus comprising: a pleated functional element comprising a pleated structure and, secured to the pleated structure around a periphery thereof, a reinforcing frame, wherein the pleated structure is comprised of a humidifying membrane and, superimposed on at least one surface thereof, a gas-permeable reinforcing material layer, and a dry-side channel and a wet-side channel which are, respectively, provided on opposite sides of the pleated functional element, wherein each of the dry-side channel and the wet-side channel has at least one pair of a gas-intake and a gas-outlet, the humidifying apparatus having a first pressure-buffering means between the gas-intake and an outside conduit connected thereto and a second pressure-buffering means between the gas-outlet and an outside conduit connected thereto, wherein the humidifying membrane divides the internal space of the pleated functional element into spaces which form a part or whole of the dry-side channel and a part or whole of the wet-sideType: GrantFiled: May 28, 2004Date of Patent: May 18, 2010Assignee: Asahi Kasei Chemicals CorporationInventors: Takuya Hasegawa, Takahiko Kondo, Yoshimichi Mitamura