Abstract: An apparatus for depositing and aligning an amorphous film in a single step, a method of forming an aligned film on a substrate in a single step by combining the deposition and alignment of an alignment layer into a single-step using ion beam processing and an amorphous film having an aligned atomic structure prepared by a method in which an aligned film is deposited and aligned in a single step are provided. The film is deposited and aligned in a single step by bombarding a substrate with an ion beam at a designated incident angle to simultaneously (a) deposit the film onto the substrate and (b) arrange an atomic structure of the film in at least one predetermined aligned direction.

Abstract: To provide an optically transparent film, a method of manufacturing the optically transparent film, an alignment film formed of the optically transparent film, and a liquid crystal panel and a display including the alignment film. The optically transparent film includes amorphous fluorocarbon. Preferably, the integrated transmittance of the optically transparent film is in the visible region is about 50% or higher when the optically transparent film has a film thickness of about 100 nm. The amorphous fluorocarbon has an atomic ratio between hydrogen atoms and fluorine atoms of about 1/9 or higher, and the transmittance in the visible region can be controlled by controlling the atomic ratio of fluorine atoms.

Abstract: An apparatus for depositing and aligning an amorphous film in a single step, a method of forming an aligned film on a substrate in a single step by combining the deposition and alignment of an alignment layer into a single-step using ion beam processing and an amorphous film having an aligned atomic structure prepared by a method in which an aligned film is deposited and aligned in a single step are provided. The film is deposited and aligned in a single step by bombarding a substrate with an ion beam at a designated incident angle to simultaneously (a) deposit the film onto the substrate and (b) arrange an atomic structure of the film in at least one predetermined aligned direction.

Abstract: The present invention includes a method of forming an aligned film on a substrate. The film is deposited and aligned in a single step by a method comprising the step of bombarding a substrate with an ion beam at a designated incident angle to simultaneously (a) deposit the film onto the substrate and (b) arrange an atomic structure of the film in at least one predetermined aligned direction.

Abstract: To provide an optic ally transparent film, a method of manufacturing the optically transparent film, an alignment film formed of the optically transparent film, and a liquid crystal panel and a display including the alignment film. The optically transparent film includes amorphous fluorocarbon. Preferably, the integrated transmittance of the optically transparent film is in the visible region is about 50% or higher when the optically transparent film has a film thickness of about 100 nm. The amorphous fluorocarbon has an atomic ratio between hydrogen atoms and fluorine atoms of about 1/9 or higher, and the transmittance in the visible region can be controlled by controlling the atomic ratio of fluorine atoms.

Abstract: An undoped GaAs layer is epitaxially grown on a substrate in a crystal growth device. An undoped Al.sub.x Ga.sub.1-x As layer is then epitaxially grown to form an undoped hetero-junction structure. After this, a sample is transferred to a focused ion beam (FIB) apparatus. A dopant ion beam is focused and implanted into the Al.sub.x Ga.sub.1-x As layer in a dot-like or wire-like pattern so that it does not extend to the undoped GaAs layer or channel layer, and a zero- or one-dimensional carrier gas 8 is generated in the channel layer. The invention allows maskless ion implantation, and makes the fabrication process much easier because quantum wires and dots are drawn, patterned or formed directly by ion implantation. In addition, no etching process is required, so quantum wires and quantum dots can be fabricated precisely.

Abstract: An undoped GaAs layer is epitaxially grown on a substrate in a crystal growth device. An undoped Al.sub.x Ga.sub.1-x As layer is then epitaxially grown to form an undoped hetero-junction structure. After this, a sample is transferred to a focused ion beam (FIB) apparatus. A dopant ion beam is focused and implanted into the Al.sub.x Ga .sub.1-x As layer in a dot-like or wire-like pattern so that it does not extend to the undoped GaAs layer or channel layer, and a zero- or one-dimensional carrier gas 8 is generated in the channel layer. The invention allows maskless ion implantation, and makes the fabrication process much easier because quantum wires and dots are drawn, patterned or formed directly by ion implantation. In addition, no etching process is required, so quantum wires and quantum dots can be fabricated precisely.

Abstract: A first and a second magnetic layer are deposited on a substrate. The first magnetic layer has high magneto-optical effect at short wavelengths, but low perpendicular anisotropy. The second magnetic layer has low magneto-optical effect at short wavelengths, but high perpendicular anisotropy. The magnetic exchange coupling between the two magnetic layers results in a recording medium which has strong perpendicular anisotropy and high magneto-optical effect, even at short wavelengths.