Abstract: A plasma processing apparatus includes a plasma processing chamber; a substrate support disposed within the plasma processing chamber and including a lower electrode; an upper electrode disposed above the substrate support; and an RF power supply configured to supply an RF signal to the upper electrode or the lower electrode, the RF signal having a first power level during a first sub-period in a repetition period and a second power level during a second sub-period in the repetition period; and a DC power supply configured to supply a DC signal to the lower electrode. The DC signal has an OFF-state during a delay period in the first sub-period, has a sequence of a plurality of DC pulses during the first sub-period excluding the delay period, and has an OFF-state during the second sub-period, the delay period being within a range of 2% to 7% of the repetition period.

Abstract: An etching method includes (a) providing a substrate including a first region and a second region below the first region, the first region containing a first material and including an opening, the second region containing a second material different from the first material, the second material containing silicon; (b) forming a metal-containing deposition on the first region by using first plasma generated from a first process gas containing halogen, metal, and at least one of carbon or hydrogen; and (c) after (b), etching the second region via the opening by using second plasma generated from a second process gas different from the first process gas.

Abstract: A plasma processing method includes: a) providing a substrate on a substrate support; b) supplying a process gas; c) periodically supplying a pulse voltage to the substrate support; and d) periodically supplying RF power and generating plasma from the process gas to etch a silicon-containing film included in the substrate. The pulse voltage is negative. A first period in which a first pulse voltage is supplied and a second period in which the pulse voltage is not supplied or a second pulse voltage whose absolute value is less than that of the first pulse voltage is supplied are repeated in c). A third period in which first RF power is supplied and a fourth period in which the RF power is not supplied or second RF power less than the first RF power is supplied are repeated in d). The first period starts before a start of the third period.

Abstract: A plasma processing method executed by a plasma processing apparatus with a chamber is provided. The method includes (a) providing in the chamber a substrate that includes an etching film and a mask film, the substrate including a first region where the etching film is exposed and a second region where the mask film is exposed, (b) supplying into the chamber a processing gas including a carbon-containing gas to generate plasma from the processing gas to etch the etching film and to form a protective film on the mask film, and (c) supplying the processing gas into the chamber to generate plasma from the processing gas to further etch the etching film and to remove at least part of the protective film.

Abstract: A method of etching a substrate including an etching film and a mask formed on the etching film is provided. The mask includes a first pattern of a first recess having a first opening and a second pattern of a second recess having a second opening. The method includes etching the etching film to a predetermined depth; depositing a protective film on the mask after the etching; and etching the etching film after the depositing. The first opening is smaller than the second opening. As a result of the depositing, the first opening of the first pattern is clogged and the second opening of the second pattern is not clogged.

Abstract: In a disclosed method, etching a film by using plasma of a first processing gas and etching the film by using plasma of a second processing gas are alternately repeated. The first processing gas and the second processing gas each include a fluorocarbon gas. In etching the film by using the plasma of the first processing gas and etching the film by using the plasma of the second processing gas, radio frequency power is used to attract ions to the substrate. The first processing gas further includes an additive gas that is a source for nitrogen or sulfur and fluorine. In the first processing gas, the flow rate of the additive gas is smaller than the flow rate of the fluorocarbon gas.

Abstract: A disclosed method etches a silicon oxide film of a substrate on which a mask is provided. The method includes performing first plasma processing on a substrate by using a first plasma formed from a first processing gas including a fluorocarbon gas, a fluorine-free carbon-containing gas, and an oxygen-containing gas. The method further includes performing second plasma processing on the substrate by using a second plasma formed from a second processing gas including a fluorocarbon gas. A temperature of the substrate during the first plasma processing is lower than the temperature of the substrate during the second plasma processing.

Abstract: In a disclosed method, etching a film by using plasma of a first processing gas and etching the film by using plasma of a second processing gas are alternately repeated. The first processing gas and the second processing gas each include a fluorocarbon gas. In etching the film by using the plasma of the first processing gas and etching the film by using the plasma of the second processing gas, radio frequency power is used to attract ions to the substrate. The first processing gas further includes an additive gas that is a source for nitrogen or sulfur and fluorine. In the first processing gas, the flow rate of the additive gas is smaller than the flow rate of the fluorocarbon gas.

Abstract: A deposition processing method includes a step of depositing deposits onto a substrate using a first plasma generated in a processing condition of depositing the deposits onto the substrate, which is basically a first processing condition, and a preceding step performed before the step of depositing the deposits onto the substrate, wherein, within the step of depositing the deposits transited from the preceding step, the processing condition is controlled so as to deposit less deposits than that in the first processing condition until a state of the first plasma is stabilized.

Abstract: A method of etching a substrate including an etching film and a mask formed on the etching film is provided. The mask includes a first pattern of a first recess having a first opening and a second pattern of a second recess having a second opening. The method includes etching the etching film to a predetermined depth; depositing a protective film on the mask after the etching; and etching the etching film after the depositing. The first opening is smaller than the second opening. As a result of the depositing, the first opening of the first pattern is clogged and the second opening of the second pattern is not clogged.

Abstract: In an etching method, plasma of a first processing gas and plasma of a second processing gas are alternately generated. Each of the first processing gas and the second processing gas includes a first gas containing first fluorocarbon, a second gas containing second fluorocarbon, an oxygen-containing gas and a fluorine-containing gas. A ratio of a number of fluorine atoms to a number of carbon atoms in a molecule of the second fluorocarbon is larger than that in a molecule of the first fluorocarbon. When a flow rate of the first gas is increased, a flow rate of the second gas is decreased. When a flow rate of the second gas is increased, a flow rate of the first gas and a flow rate of the fluorine-containing gas are decreased and a flow rate of the oxygen-containing gas is increased.

Abstract: A plasma etching method etches an organic film formed on a target substrate by using a plasma of a processing gas via a silicon-containing mask. The processing gas is a gaseous mixture of an oxygen-containing gas, a rare gas and a carbon fluoride gas. A computer-executable control program controls a plasma etching apparatus to perform the plasma etching method. A computer-readable storage medium stores therein a computer-executable control program.

Abstract: A plasma processing apparatus includes a first and a second electrode disposed to face each other in a processing chamber, the second electrode supporting a substrate; a first RF power supply for applying a first RF power of a higher frequency to the second electrode; a second RF power supply for applying a second RF power of a lower frequency to the second electrode; and a DC power source for applying a DC voltage to the first electrode. In a plasma etching method for etching a substrate by using the plasma processing apparatus, the first and the second radio frequency power are applied to the second electrode to convert a processing gas containing no CF-based gas into a plasma and a DC voltage is applied to the first electrode, to thereby etch an organic film or an amorphous carbon film on the substrate by using a silicon-containing mask.

Abstract: A plasma etching method etches an organic film formed on a target substrate by using a plasma of a processing gas via a silicon-containing mask. The processing gas is a gaseous mixture of an oxygen-containing gas, a rare gas and a carbon fluoride gas. A computer-executable control program controls a plasma etching apparatus to perform the plasma etching method. A computer-readable storage medium stores therein a computer-executable control program.

Abstract: A plasma processing apparatus includes a mounting table for mounting thereon an object to be processed, an electrode connected to a high frequency power supply, an electrical state setting unit for setting an electrical state of the mounting table to a conducting state or a floating state, and a controller for controlling the high frequency power supply to apply a high frequency power to the electrode and controlling the electrical state setting unit to set an electrical state of the mounting table to a floating state. Further, a radical produced from a cleaning gas by the applied high frequency power is made to have a contact with the mounting table.

Abstract: A plasma processing apparatus includes a first and a second electrode disposed to face each other in a processing chamber, the second electrode supporting a substrate; a first RF power supply for applying a first RF power of a higher frequency to the second electrode; a second RF power supply for applying a second RF power of a lower frequency to the second electrode; and a DC power source for applying a DC voltage to the first electrode. In a plasma etching method for etching a substrate by using the plasma processing apparatus, the first and the second radio frequency power are applied to the second electrode to convert a processing gas containing no CF-based gas into a plasma and a DC voltage is applied to the first electrode, to thereby etch an organic film or an amorphous film on the substrate by using a silicon-containing mask.

Abstract: A plasma processing apparatus includes a mounting table for mounting thereon an object to be processed, an electrode connected to a high frequency power supply, an electrical state setting unit for setting an electrical state of the mounting table to a conducting state or a floating state, and a controller for controlling the high frequency power supply to apply a high frequency power to the electrode and controlling the electrical state setting unit to set an electrical state of the mounting table to a floating state. Further, a radical produced from a cleaning gas by the applied high frequency power is made to have a contact with the mounting table.