Patents by Inventor Yoshimitsu Saito
Yoshimitsu Saito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7867836Abstract: A method for manufacturing a junction semiconductor device having a drain region including a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region including a low-resistance layer of a first conductive type formed on the other surface of the semiconductor crystal, a gate region of a second conductive type formed on the periphery of the source region, a high-resistance layer of a first conductive type between the source region and the drain region, and a recombination-inhibiting semiconductor layer of a second conductive type provided in the vicinity of the surface of the semiconductor crystal between the gate region and the source region.Type: GrantFiled: September 3, 2008Date of Patent: January 11, 2011Assignee: Honda Motor Co., Ltd.Inventors: Ken-ichi Nonaka, Hideki Hashimoto, Seiichi Yokoyama, Kensuke Iwanaga, Yoshimitsu Saito
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Patent number: 7671467Abstract: A power semiconductor module having an integral circuit board with a metal substrate electrode, an insulation substrate and a heat sink joined is disclosed. A SiC semiconductor power device is joined to a top of the metal substrate electrode of the circuit board. A difference in average coefficients of thermal expansion between constituent materials of the circuit board in a temperature range from room to joining time temperatures is 2.0 ppm/° C. or less, and a difference in expansion, produced by a difference between a lowest operating temperature and a joining temperature, of the circuit-board constituent materials is 2,000 ppm or less.Type: GrantFiled: May 10, 2007Date of Patent: March 2, 2010Assignee: Honda Motor Co., Ltd.Inventors: Kenichi Nonaka, Takeshi Kato, Kenji Oogushi, Yoshihiko Higashidani, Yoshimitsu Saito, Kenji Okamoto
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Patent number: 7544552Abstract: A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second high-resistance layer, a step for forming a low-resistance layer of a first conductive type that acts as a source region, a step for performing partial etching to a midway depth of the second high-resistance layer and the low-resistance layer, a step for forming a gate region below the portion etched in the etching step, and a step for forming a protective film on the surface of the region between the gate region and the source region. A gate region is formed using relatively low energy ion implantation in the surface that has been etched in advance to a height that is between the lower surface of the source area and the upper surface of the channel-doped layer.Type: GrantFiled: March 23, 2006Date of Patent: June 9, 2009Assignees: Honda Motor Co., Ltd., Shindengen Electric Manufacturing Co., Ltd.Inventors: Ken-ichi Nonaka, Hideki Hashimoto, Seiichi Yokoyama, Kensuke Iwanaga, Yoshimitsu Saito, Hiroaki Iwakuro, Masaaki Shimizu, Yusuke Fukuda, Koichi Nishikawa, Yusuke Maeyama
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Publication number: 20090004790Abstract: A method for manufacturing a junction semiconductor device having a drain region including a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region including a low-resistance layer of a first conductive type formed on the other surface of the semiconductor crystal, a gate region of a second conductive type formed on the periphery of the source region, a high-resistance layer of a first conductive type between the source region and the drain region, and a recombination-inhibiting semiconductor layer of a second conductive type provided in the vicinity of the surface of the semiconductor crystal between the gate region and the source region.Type: ApplicationFiled: September 3, 2008Publication date: January 1, 2009Inventors: Ken-ichi NONAKA, Hideki Hashimoto, Seiichi Yokoyama, Kensuke Iwanaga, Yoshimitsu Saito
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Patent number: 7449734Abstract: A junction semiconductor device having a drain region including a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region including a low-resistance layer of a first conductive type formed on the other surface of the semiconductor crystal, a gate region of a second conductive type formed on the periphery of the source region, a high-resistance layer of a first conductive type between the source region and the drain region, and a recombination-inhibiting semiconductor layer of a second conductive type provided in the vicinity of the surface of the semiconductor crystal between the gate region and the source region.Type: GrantFiled: March 23, 2006Date of Patent: November 11, 2008Assignee: Honda Motor Co., Ltd.Inventors: Ken-ichi Nonaka, Hideki Hashimoto, Seiichi Yokoyama, Kensuke Iwanaga, Yoshimitsu Saito
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Publication number: 20070262387Abstract: A power semiconductor module having an integral circuit board with a metal substrate electrode, an insulation substrate and a heat sink joined is disclosed. A SiC semiconductor power device is joined to a top of the metal substrate electrode of the circuit board. A difference in average coefficients of thermal expansion between constituent materials of the circuit board in a temperature range from room to joining time temperatures is 2.0 ppm/° C. or less, and a difference in expansion, produced by a difference between a lowest operating temperature and a joining temperature, of the circuit-board constituent materials is 2,000 ppm or less.Type: ApplicationFiled: May 10, 2007Publication date: November 15, 2007Inventors: Kenichi Nonaka, Takeshi Kato, Kenji Oogushi, Yoshihiko Higashidani, Yoshimitsu Saito, Kenji Okamoto
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Publication number: 20060216879Abstract: A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second high-resistance layer, a step for forming a low-resistance layer of a first conductive type that acts as a source region, a step for performing partial etching to a midway depth of the second high-resistance layer and the low-resistance layer, a step for forming a gate region below the portion etched in the etching step, and a step for forming a protective film on the surface of the region between the gate region and the source region. A gate region is formed using relatively low energy ion implantation in the surface that has been etched in advance to a height that is between the lower surface of the source area and the upper surface of the channel-doped layer.Type: ApplicationFiled: March 23, 2006Publication date: September 28, 2006Inventors: Ken-ichi Nonaka, Hideki Hashimoto, Seiichi Yokoyama, Kensuke Iwanaga, Yoshimitsu Saito, Hiroaki Iwakuro, Masaaki Shimizu, Yusuke Fukuda, Koichi Nishikawa, Yusuke Maeyama
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Publication number: 20060214200Abstract: A junction semiconductor device having a drain region comprising a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region comprising a low-resistance layer of a first conductive type formed on the other surface of the semiconductor crystal, a gate region of a second conductive type formed on the periphery of the source region, a high-resistance layer of a first conductive type between the source region and the drain region, and a recombination-inhibiting semiconductor layer of a second conductive type provided in the vicinity of the surface of the semiconductor crystal between the gate region and the source region.Type: ApplicationFiled: March 23, 2006Publication date: September 28, 2006Inventors: Ken-ichi Nonaka, Hideki Hashimoto, Seiichi Yokoyama, Kensuke Iwanaga, Yoshimitsu Saito
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Publication number: 20010050404Abstract: The present invention provide a solar cell and a method of manufacturing the same which is high in the efficiency of energy conversion and improved in the durability while its production process requires not particularly high accuracy.Type: ApplicationFiled: May 31, 2001Publication date: December 13, 2001Applicant: Honda Giken Kogyo Kabushiki KaishaInventors: Yoshimitsu Saito, Seiichi Yokoyama
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Patent number: 5770803Abstract: A semiconductor substrate has a surface layer disposed underneath a gate electrode of a field-effect transistor and having a resistance higher than the resistance of an inner layer which is formed in the semiconductor substrate below the surface layer. The surface layer is formed when a donor doped in the surface layer and an acceptor generated based on a compressive stress which is developed in the surface layer when the gate electrode is formed substantially cancel out each other. The field-effect transistor operates alternatively as a junction field-effect transistor when the surface layer is turned into a p-type structure when a compressive stress is generated in the surface layer and a metal semiconductor field-effect transistor when the surface layer is turned into an n-type structure when a tensile stress is generated in the surface layer.Type: GrantFiled: September 4, 1996Date of Patent: June 23, 1998Assignee: Honda Giken Kogyo Kabushiki KaishaInventor: Yoshimitsu Saito
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Patent number: 5372878Abstract: Paper having a relatively high rigidity including Japanese paper and fibrous sheet such as vegetable fibrous sheet and nonwoven fabric are used as base materials for finishing without subjected to any processing while fibrous sheets including some sorts of Japanese paper and spunbonded nonwoven fabric being high in softness and flexibility and bulky, and machine-made paper being lightweight and thin, and moreover having a relatively high rigidity are incapable of or nondurable to physical processing such as beating, bending and crumpling, so that the pretreatment or preliminary processing (primary processing) is applied to these sheets for use as base materials in such a manner that they are resin-treated or have plastic material, elastomer film, woven cloth or one selected from a group of fibrous sheets similar to the above attached thereto so as to convert them into composite sheets.Type: GrantFiled: June 23, 1992Date of Patent: December 13, 1994Assignee: Yamasa Momi Kikaku Co., Ltd.Inventor: Yoshimitsu Saito
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Patent number: 5279704Abstract: A wafer comprising a GaAs substrate and an AlGaAs layer deposited thereon is rotated in a spin etching process. To the GaAs substrate of the rotating wafer, there is supplied an ammoniacal etching solution for selectively etching the GaAs substrate to form a groove therein. The ammoniacal etching solution comprises a mixture of hydrogen peroxide and aqueous ammonia, the volume ratio of hydrogen peroxide and aqueous ammonia being in the range from about 20 to 60. While the GaAs substrate is being selectively etched by the ammoniacal solution, the rotational speed of the wafer is progressively increased stepwise or continuously. The etching solution whose volume ratio of hydrogen peroxide and aqueous ammonia is in the range from about 20 to 60 is suitable for the formation of a deep groove in the GaAs substrate.Type: GrantFiled: April 22, 1992Date of Patent: January 18, 1994Assignee: Honda Giken Kogyo Kabushiki KaishaInventor: Yoshimitsu Saito