Patents by Inventor Yoshimitsu Shimane
Yoshimitsu Shimane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9905401Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.Type: GrantFiled: April 1, 2015Date of Patent: February 27, 2018Assignee: CANON ANELVA CORPORATIONInventors: Nobuo Yamaguchi, Kazuaki Matsuo, Susumu Akiyama, Satoshi Uchino, Yoshimitsu Shimane
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Patent number: 9905441Abstract: An oxidation process apparatus according to one embodiment of the present invention includes: a substrate holder provided in a processing chamber and having a substrate holding surface; a gas introduction unit for introducing an oxygen gas; a cylindrical member; and a substrate holder drive unit for changing relative positions of the substrate holder and the cylindrical member to allow the substrate holding surface and the cylindrical member to form an oxidation process space. The cylindrical member is provided so as to form a gap between the cylindrical member and the substrate holder during formation of the space. The oxygen gas is introduced restrictively into the space. The oxygen gas introduced from the gas introduction unit is evacuated through the gap.Type: GrantFiled: June 17, 2015Date of Patent: February 27, 2018Assignee: CANON ANELVA CORPORATIONInventors: Yoshimitsu Shimane, Takuya Seino
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Patent number: 9865805Abstract: Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.Type: GrantFiled: June 17, 2015Date of Patent: January 9, 2018Assignee: CANON ANELVA CORPORATIONInventors: Takuya Seino, Kazumasa Nishimura, Hiroki Okuyama, Yuichi Otani, Yuta Murooka, Yoshimitsu Shimane
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Patent number: 9779921Abstract: An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction.Type: GrantFiled: June 25, 2015Date of Patent: October 3, 2017Assignee: CANON ANELVA CORPORATIONInventors: Yoshimitsu Shimane, Satoshi Uchino, Susumu Akiyama, Kazuaki Matsuo, Nobuo Yamaguchi
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Publication number: 20160005958Abstract: Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.Type: ApplicationFiled: June 17, 2015Publication date: January 7, 2016Inventors: Takuya Seino, Kazumasa Nishimura, Hiroki Okuyama, Yuichi Otani, Yuta Murooka, Yoshimitsu Shimane
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Publication number: 20150318466Abstract: An oxidation process apparatus according to one embodiment of the present invention includes: a substrate holder provided in a processing chamber and having a substrate holding surface; a gas introduction unit for introducing an oxygen gas; a cylindrical member; and a substrate holder drive unit for changing relative positions of the substrate holder and the cylindrical member to allow the substrate holding surface and the cylindrical member to form an oxidation process space. The cylindrical member is provided so as to form a gap between the cylindrical member and the substrate holder during formation of the space. The oxygen gas is introduced restrictively into the space. The oxygen gas introduced from the gas introduction unit is evacuated through the gap.Type: ApplicationFiled: June 17, 2015Publication date: November 5, 2015Inventors: Yoshimitsu Shimane, Takuya Seino
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Publication number: 20150294845Abstract: An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction.Type: ApplicationFiled: June 25, 2015Publication date: October 15, 2015Applicant: CANON ANELVA CORPORATIONInventors: Yoshimitsu SHIMANE, Satoshi UCHINO, Susumu AKIYAMA, Kazuaki MATSUO, Nobuo YAMAGUCHI
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Publication number: 20150206714Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.Type: ApplicationFiled: April 1, 2015Publication date: July 23, 2015Inventors: NOBUO YAMAGUCHI, KAZUAKI MATSUO, SUSUMU AKIYAMA, SATOSHI UCHINO, YOSHIMITSU SHIMANE
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Patent number: 9034152Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.Type: GrantFiled: December 2, 2011Date of Patent: May 19, 2015Assignee: CANON ANELVA CORPORATIONInventors: Nobuo Yamaguchi, Kazuaki Matsuo, Susumu Akiyama, Satoshi Uchino, Yoshimitsu Shimane
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Publication number: 20120152736Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.Type: ApplicationFiled: December 2, 2011Publication date: June 21, 2012Applicant: CANON ANELVA CORPORATIONInventors: Nobuo Yamaguchi, Kazuaki Matsuo, Susumu Akiyama, Satoshi Uchino, Yoshimitsu Shimane