Abstract: Disclosed is an active matrix substrate (1) including thereon: a plurality of signal lines (2); a plurality of scan lines (3) that intersect the signal lines (2); switching elements (4) disposed near intersections of the signal lines (2) and the scan lines (3); a plurality of input terminals (7) for inputting signals to the signal lines (2) and scan lines (3); and short-circuit wiring (8) disposed in an outer area with respect to the input terminals (7), where the short-circuit wiring (8) includes a trunk wiring line (8a) and a plurality of branch wiring lines (8b) that branch off from the trunk wiring line (8a) and that are connected to the respective input terminals (7), and a plurality of separator sections (9) are provided on the short-circuit wiring (8). The separator sections (9) electrically isolate the individual input terminals (7) and the trunk wiring line (8a) from each other.

Abstract: The present invention provides an active matrix substrate and a display device that have sufficient resistance to a surge current without formation of a short ring and that enable narrowing of a picture-frame region. The present invention is an active matrix substrate on which a plurality of pixels are formed in a matrix shape. The active matrix substrate includes, on one principal surface side of the substrate: a terminal; a semiconductor element; wiring that is formed in a picture-frame region of the substrate and that connects the terminal and the semiconductor element; and an annular conductive portion formed through an insulation layer on at least one of an upper layer side and a lower layer side of the wiring. The wiring comprises a meander structure including a meander-shaped portion. A portion of the conductive portion is disposed along the meander-shaped portion.

Abstract: A device for manufacturing an active matrix substrate including a plurality of pixels arranged in a matrix, in which a short-circuit defect in the active matrix substrate is detected and repaired, includes a stage (30a) configured to place a test substrate (19) which will become the active matrix substrate, a defective pixel detector (40a) configured to input a test signal to the test substrate (19) placed on the stage (30a), and electrically detect coordinates of a defective pixel in which a short-circuit defect has occurred, and a defect position identifier (50) configured to input the test signal to the test substrate (19) placed on the stage (30a) to cause the defective pixel detected by the defective pixel detector (40a) to generate heat, and sense the heat generation in the defective pixel using far-infrared thermography, thereby identifying a position of the short-circuit defect in the defective pixel.

Abstract: Disclosed is an active matrix substrate (1) including thereon: a plurality of signal lines (2); a plurality of scan lines (3) that intersect the signal lines (2); switching elements (4) disposed near intersections of the signal lines (2) and the scan lines (3); a plurality of input terminals (7) for inputting signals to the signal lines (2) and scan lines (3); and short-circuit wiring (8) disposed in an outer area with respect to the input terminals (7), where the short-circuit wiring (8) includes a trunk wiring line (8a) and a plurality of branch wiring lines (8b) that branch off from the trunk wiring line (8a) and that are connected to the respective input terminals (7), and a plurality of separator sections (9) are provided on the short-circuit wiring (8). The separator sections (9) electrically isolate the individual input terminals (7) and the trunk wiring line (8a) from each other.

Abstract: The present invention provides an active matrix substrate and a display device that have sufficient resistance to a surge current without formation of a short ring and that enable narrowing of a picture-frame region. The present invention is an active matrix substrate on which a plurality of pixels are formed in a matrix shape. The active matrix substrate includes, on one principal surface side of the substrate: a terminal; a semiconductor element; wiring that is formed in a picture-frame region of the substrate and that connects the terminal and the semiconductor element; and an annular conductive portion formed through an insulation layer on at least one of an upper layer side and a lower layer side of the wiring. The wiring comprises a meander structure including a meander-shaped portion. A portion of the conductive portion is disposed along the meander-shaped portion.

Abstract: A device for manufacturing an active matrix substrate including a plurality of pixels arranged in a matrix, in which a short-circuit defect in the active matrix substrate is detected and repaired, includes a stage (30a) configured to place a test substrate (19) which will become the active matrix substrate, a defective pixel detector (40a) configured to input a test signal to the test substrate (19) placed on the stage (30a), and electrically detect coordinates of a defective pixel in which a short-circuit defect has occurred, and a defect position identifier (50) configured to input the test signal to the test substrate (19) placed on the stage (30a) to cause the defective pixel detected by the defective pixel detector (40a) to generate heat, and sense the heat generation in the defective pixel using far-infrared thermography, thereby identifying a position of the short-circuit defect in the defective pixel.

Abstract: An active-matrix substrate is provided with a protecting circuit that connects adjacent spare wires in order to protect the substrate from an undesired high voltage that may be applied to the spare wires.

Abstract: An active-matrix substrate 1 of the present invention is provided with a protecting circuit 12 which connects adjacent spare wires 7 in order to protect the substrate from an undesired high voltage which is applied to a plurality of the spare wires 7 disposed on the active-matrix substrate 1.

Abstract: In an active matrix substrate having thereon a matrix of pixels each composed of a pair of a TFT and a pixel electrode, when the shorting of the pixel electrodes in adjacent pixels occurs, an electrical connection between the pixel electrode and drain electrode in the TFT of a matching pair in either of the shorted pixel electrodes is cut. For example, when the shorting of two adjacent pixels occurs, the pixel electrodes in both the pixels are driven by the TFT in the non-cut pixel. This arrangement makes it possible to make a display defect resulted from the shorting of adjacent pixels on the active matrix substrate less noticeable, and hence to upgrade display quality.

Abstract: In an active matrix substrate having thereon a matrix of pixels each composed of a pair of a TFT and a pixel electrode, when the shorting of the pixel electrodes in adjacent pixels occurs, an electrical connection between the pixel electrode and drain electrode in the TFT of a matching pair in either of the shorted pixel electrodes is cut. For example, when the shorting of two adjacent pixels occurs, the pixel electrodes in both the pixels are driven by the TFT in the non-cut pixel. This arrangement makes it possible to make a display defect resulted from the shorting of adjacent pixels on the active matrix substrate less noticeable, and hence to upgrade display quality.

Abstract: There is provided a method of producing a high-quality n-type, 6H silicon carbide single crystal with good reproducibility. A silicon carbide single crystal substrate having a growth orientation of <0001>, as a seed crystal, is mounted to an inner surface of a cover of a graphite crucible. A source material includes a high-purity silicon carbide powder having an impurity proportion of not more than 1 ppm and an aluminum powder of 50 ppm relative to the silicon carbide powder. The source material is loaded into the graphite crucible. The graphite crucible is closed with a seed crystal-mounted cover placed in a double quartz tube. Ar gas and N.sub.2 gas are caused to flow in the double quartz tube. Temperature of the silicon carbide powder and aluminum powder is controlled to 2300.degree. C., and temperature of the silicon carbide single crystal substrate to 2200.degree. C.; and interior of the double quartz tube is controlled to 30 torr.

Abstract: A light emitting diode of silicon carbide having a p-n junction comprising an n-type layer doped with donor impurities, a first p-type layer doped with acceptor impurities, and a second p-type layer doped with acceptor impurities and donor impurities. The first p-type layer has a thickness less than the diffusion length of electrons having flowed from the n-type layer. In this way, the first p-type layer effects light emission related to the acceptor impurities which recombine with the electrons having flowed from the n-type layer, and the second p-type layer effects light emission by donor-acceptor pairs which recombine with the electrons having flowed from the n-type layer.

Abstract: A method for growing a silicon carbide single crystal on a seed crystal using a molecular beam source in vacuo by means of a molecular beam epitaxy, wherein a material in the molecular beam source is silicon carbide. A silicon molecular beam source and/or an impurity molecular beam source for doping may be further used. Temperatures of the silicon carbide molecular beam source, the silicon molecular beam source, the impurity molecular beam source and the seed crystal are independently controlled. Vapor compositions are controlled by the silicon carbide molecular beam source, the silicon molecular beam source and the impurity molecular beam source.

Abstract: A method for the manufacture of a pyrolytic graphite with high crystallinity comprising the deposition of graphite directly onto a crystalline catalytic substrate by thermal decomposition of a carbon-containing material at a temperature of 1000.degree. C. or less, the pyrolytic graphite having interlayer spacing in a limited range and a c-axis orientation of carbon layers perpendicular to the surface of the substrate. An electrode with graphite as an active material and a crystalline metal electrode substrate as a current collector unified, the graphite being pyrolytic graphite that is deposited on the crystalline metal electrode substrate with catalytic properties so as to cover the crystalline metal electrode substrate by the above-mentioned method.

Abstract: A method for the production of a carbon electrode includes directly depositing a carbon material on an electroconductive and flexible electrode substrate by chemical vapor deposition using gaseous hydrocarbons as a starting material, filling the carbon material directly deposited on the electrode substrate with a charge carrier material capable of being reversibly intercalcated therein and deintercalated therefrom, and compressing the electrode substrate filled with the charge carrier material, resulting in a thin plate-shaped carbon electrode.

Abstract: A method for the production of a carbon electrode comprising disposing an electroconductive and flexible electrode substrate within a reaction tube to which a gaseous material gas of hydrocarbons is supplied, directly depositing a carbon material on said electrode substrate by chemical vapor deposition at 1500.degree. C. or less so as to coat said electrode substrate with a carbon material, and rolling said electrode substrate coated with the carbon material, resulting in a thin-plate shaped carbon electrode having a high density.

Abstract: An electrode comprising as the main component carbon materials that have a layer structure more disordered than graphite and have hexagonal net faces with a selective orientation. Using said electrode, a secondary battery with a nonaqueous electrolytic solution is manufactured, which comprises a positive electrode, a nonaqueous electrolytic solution, and a negative electrode that has carbon materials as the active substances that can form an electrochemically reversible compound with a light-weight metal element, wherein said positive electrode is made such that its capacity for being charged or discharged is greater than that of said negative electrode.

Abstract: A method for the manufacture of a pyrolytic graphite with high crystallinity comprising the deposition of graphite directly onto a catalytic substrate by thermal decomposition of a carbon-containing material at low temperatures. An electrode with graphite as an active material and an electrode substrate as a current collector unified, said graphite being pyrolytic graphite that is deposited on a metal electrode substrate with catalytic properties so as to cover said metal electrode substrate by the method. A battery has a pair of positive and negative electrodes, at least one of which is made of graphite as its electrode active material.

Abstract: A secondary battery using nonaqueous electrolytes that contain a light metal as an active material, and comprising an anode, a cathode and a separator that electrically separates the anode from the cathode, wherein said anode comprises a heat-resistant porous support and a carbon material deposited on said porous support, said carbon material having the following physico-chemical properties: The mean interlayer separation of said carbon active material is in the range of 0.337 to 0.355 nm; the ratio of the Raman intensity of 1360 cm.sup.-1 to that of 1580 cm.sup.-1 with regard to the argon laser Raman spectra of said carbon material is in the range of 0.4 to 1.0; and said carbon material is mainly composed of a carbon having a six-membered ring structure with flat networks and having a selective orientation.

Abstract: The preferred embodiment provides such a hydrogen-stored electrode extremely useful for application to the cathode of alkaline battery. It makes it possible to manufacture such a useful hydrogen-stored electrode molded into electrode form after activation of hydrogen-stored alloy by means of hydrogen generated by immersion of blends into solution, in which the blends is composed of hydrogen-stored alloy and additives that generate hydrogen through their reaction with the above solution.