Abstract: In an exemplary embodiment, a player object is caused to perform a posturing action of holding an item object in an input direction of a first direction input. When a second direction input is performed during the posturing action, a first swinging action of swinging the item object in the direction is performed. Further, when a going-way direction input in which a displacement amount with respect to the origin of an operation device and not greater than a first value exceeds the first value, and a return-way direction input in which the displacement amount becomes not greater than a second value after the going-way direction input have been performed within a first time, a second swinging action of swinging the item object in at least one of the going-way direction and the return-way direction is performed.

Abstract: The present invention provides relates to silicon carbide single-crystals and in particular to silicon carbide single-crystals produced by supplying superfine silicon dioxide particles and superfine carbon particles to nucleating silicon carbide crystals and reducing the silicon dioxide by the carbon. The silicon carbide single-crystals according to the present invention comprise silicon carbide single-crystals grown on nucleating silicon carbide crystals, which are prepared by supplying and sticking superfine silicon dioxide particles and superfine carbon particles onto the surface of nucleating silicon carbide crystals kept in a heated state in an inert gas atmosphere and reducing the silicon dioxide by the carbon on the surface of the nucleating silicon carbide crystals thereby allowing silicon carbide single-crystals to grow on the nucleating silicon carbide crystals.

Abstract: In single crystal SiC 1, growing single crystal SiC 3 is integrally formed on a surface of a single crystal hexagonal (6H type) &agr;-SiC substrate 2 used as a seed crystal. The number of micropipes 4A of the growing single crystal SiC 3 is less than that of the micropipes 4B of the single crystal &agr;-SiC substrate 2, and the thickness t3 thereof is less than the thickness t2 of the single crystal &agr;-SiC substrate 2, thereby making it possible to obtain the high quality-single crystal SiC wherein the number of the micropipes per unit area is less, thereby decreasing the distortion in the neighborhood of the micropipes. This can provide the high-quality single crystal SiC which can be practically used as a substrate wafer for fabricating a semiconductor device.

Abstract: The present invention provides relates to silicon carbide single-crystals and in particular to silicon carbide single-crystals produced by supplying superfine silicon dioxide particles and superfine carbon particles to nucleating silicon carbide crystals and reducing the silicon dioxide by the carbon. The silicon carbide single-crystals according to the present invention comprise silicon carbide single-crystals grown on nucleating silicon carbide crystals, which are prepared by supplying and sticking superfine silicon dioxide particles and superfine carbon particles onto the surface of nucleating silicon carbide crystals kept in a heated state in an inert gas atmosphere and reducing the silicon dioxide by the carbon on the surface of the nucleating silicon carbide crystals thereby allowing silicon carbide single-crystals to grow on the nucleating silicon carbide crystals.