Abstract: Realized is a formation of a nanopore having a desired size with high yields using the dielectric breakdown phenomenon. The present disclosure proposes, as an aspect, a pore forming method including disposing a membrane between a first electrolyte solution and a second electrolyte solution held in a chamber configuration, bringing a first electrode into contact with the first electrolyte solution and a second electrode into contact with the second electrolyte solution, outputting a first voltage from a voltage source to a circuit configured by disposing the voltage source and a resistor in a wiring connecting the first electrode and the second electrode, measuring a second voltage between the first electrode and the second electrode, detecting a significant change in the second voltage, and stopping output of the first voltage in response to detecting the significant change in the second voltage.

Abstract: Provided is a liquid feeding method for removing bubbles from a solution introduced into a fluidic device, wherein: the fluidic device includes a flow path of a volume v, a first chamber having a volume V1 and connected to a first side of the flow path, and a second chamber having a volume V2 and connected to a second side, being different from the first side, of the flow path; V1, V2, and v satisfy Formula (1) and Formula (2), ? is a solubility of gas in the solution at a temperature of the second chamber, ? is a solubility of gas in the solution at a temperature of the flow path, P0 is a pressure of a surrounding environment of the fluidic device, ?P is a bubble internal pressure rise value, where ?P=4?/d, ? is a surface tension of the solution, and d is a diameter of the flow path; and the liquid feeding method includes: disposing the solution at a first position opposite to the flow path with respect to the second chamber; pressurizing and feeding the solution so that the solution is transferred through t

Abstract: A first modulation voltage is applied to a thin film. An amount of a change in the phase of a current carried through the thin film with respect to the phase of the first modulation voltage is compared with a threshold. Upon detecting that the amount of the change in the phase exceeds the threshold is detected, the application of the first modulation voltage is stopped. Thus, a nanopore is formed on the thin film at high speed.

Abstract: An object of the present invention is to provide a biomolecule measuring device that can decrease the influence of crosstalk between chambers. A biomolecule measuring device according to the present invention supplies, to electrodes equipped on chambers, voltages modulated differently to each other.

Abstract: A biopolymer analysis device includes an insulating thin film that is made of an inorganic material, a first liquid tank and a second liquid tank that are separated by the thin film, a plurality of first electrodes that is arranged in the first liquid tank, and a second electrode that is disposed in the second liquid tank. A water-repellent liquid and a plurality of liquid droplets are introduced into the first liquid tank, the plurality of first electrodes is configured to be able to convey the plurality of droplets introduced into the first liquid tank by electro wetting on dielectric by applying a certain voltage, and the plurality of droplets is conveyed to portions coming into contact with the plurality of first electrodes, and is insulated from each other by the water-repellent liquid.

Abstract: The purpose of the present invention is to provide a highly accurate and highly reliable physical quantity sensor wherein an error due to stress applied to a sensor element of the physical quantity sensor is reduced. This physical quantity sensor device is provided with: a hollow section formed in a Si substrate; an insulating film covering the hollow section; and a heating section formed in the insulating film. The sensor device is also provided with a detection element that detects the temperature of the insulating film above the hollow section, the detection element is provided with a first silicon element and a second silicon element, and the first silicon element and the second silicon element are doped with different impurities, respectively.

Abstract: Provided is a technique for moving all of a droplet from a microchannel in which the droplet have been introduced to another layer. The droplet transport device of the present disclosure includes a substrate having a through-hole or a recess, a first electrode provided on the substrate along the surface of the substrate and arranged at a position adjacent to the through-hole or the recess, a plurality of second electrodes provided on the substrate along a surface of the substrate and to which a voltage for moving the droplet introduced on the substrate is applied, and a dielectric layer covering the surface of the substrate, the first electrode, and the second electrodes, and a water-repellent film provided on the inner wall surface of the through-hole or the recess, and on the dielectric layer.

Abstract: In a protective circuit of a conventional electronic device, surge resistance is low and it is difficult to connect an external connection terminal of an integrated circuit directly to an external connection terminal of the electronic device or the like. A protective circuit of an electronic device according to the present embodiment includes an external connection terminal 1 which is connected to an external signal; a wiring layer 2 which connects the external connection terminal 1 and a protective resistor 3; a protective resistor 3 which protects an internal circuit from surges or noises input from the external connection terminal 1; slits which divide the protective resistor 3; current distribution resistors which are constituted by dividing the protective resistor 3 by the slits; and MOS transistors which are connected to the current distribution resistors.

Abstract: To provide a gas sensor device having improved measurement accuracy. This gas sensor device is provided with: a sensor element that detects the concentration of a gas by means of heat dissipation from a heat generating body; and a cover with which the sensor element is covered. The cover has a plurality of ventilation sections, which are disposed by being separated with each other in the direction perpendicular to the flowing direction of the gas, and the sensor element is disposed between the ventilation sections.

Abstract: Even when a positive/negative surge is applied to a power-supply line, occurrence of malfunction in a semiconductor device is lessened. In an in-vehicle semiconductor device, regulators convert an externally-supplied voltage to generate voltages. A voltage monitoring unit includes a voltage monitoring circuit and a switch, and monitors first to third voltages. An internal circuit has a processor operated by the voltage, and an oscillator operated by the voltage and generating a clock signal to be provided the processor. The voltage monitoring unit stops providing the clock signal to the processor when the voltage level of at least any one of the first to third voltages is below a set value. The voltage monitoring unit provides the clock signal to the processor when the voltage levels of all the first to third voltages exceed the set value.

Abstract: A resistance circuit is configured such that a P-type resistance section and an N-type resistance section are electrically connected in series, the P-type resistance section is configured with P-type diffusion layer resistance elements that are disposed to form a right angle with respect to each other and that are electrically connected in series, and the N-type resistance section is configured with N-type diffusion layer resistance elements that are disposed to form the right angle with respect to each other and that are electrically connected in series. Furthermore, the P-type diffusion layer resistance element is disposed along a <100> orientation direction of a semiconductor substrate, and the N-type diffusion layer resistance element is disposed along a <110> orientation direction of the semiconductor substrate. It is thereby possible to provide the resistance circuit, an oscillation circuit, and an in-vehicle sensor apparatus that reduce stress-induced characteristic fluctuations.

Abstract: In a sensor device 1 according to the present invention, power is supplied from a control device 10 to a power supply terminal 7 and a ground terminal 9 of the sensor device 1 via a power supply line Vcc and a ground line Gnd, respectively, and a sensor output voltage is sent from a sensor output terminal 8 to the control device 10 via a sensor output line Vout. The control device 10 has disposed therein a constant voltage source 11 that supplies a constant voltage to the sensor device 1, and a pull-up resistor 12 connected between the sensor output line Vout and the constant voltage source 11.

Abstract: A semiconductor chip having a pad, a protective element, and an internal circuit for providing a semiconductor chip having a protective circuit with high noise resistance, wherein the semiconductor chip is characterized in that the resistance value of metal wiring on a path reaching the pad and the protective element is higher than the resistance value of the protective element.

Abstract: A resistance circuit is configured such that a P-type resistance section and an N-type resistance section are electrically connected in series, the P-type resistance section is configured with P-type diffusion layer resistance elements that are disposed to form a right angle with respect to each other and that are electrically connected in series, and the N-type resistance section is configured with N-type diffusion layer resistance elements that are disposed to form the right angle with respect to each other and that are electrically connected in series. Furthermore, the P-type diffusion layer resistance element is disposed along a <100> orientation direction of a semiconductor substrate, and the N-type diffusion layer resistance element is disposed along a <110> orientation direction of the semiconductor substrate. It is thereby possible to provide the resistance circuit, an oscillation circuit, and an in-vehicle sensor apparatus that reduce stress-induced characteristic fluctuations.

Abstract: A first modulation voltage is applied to a thin film. An amount of a change in the phase of a current carried through the thin film with respect to the phase of the first modulation voltage is compared with a threshold. Upon detecting that the amount of the change in the phase exceeds the threshold is detected, the application of the first modulation voltage is stopped. Thus, a nanopore is formed on the thin film at high speed.

Abstract: In a protective circuit of a conventional electronic device, surge resistance is low and it is difficult to connect an external connection terminal of an integrated circuit directly to an external connection terminal of the electronic device or the like.

Abstract: To a biomolecule measuring apparatus, a semiconductor sensor for detecting ions generated by a reaction between a biomolecular sample and a reagent is set. The semiconductor sensor has a plurality of cells which are arranged on a semiconductor substrate, and each of which detects ions, and a plurality of readout wires. Each of the plurality of cells has an ISFET which has a floating gate and which detects ions, a first MOSFET M2 for amplifying an output from the ISFET, and a second MOSFET M3 which selectively transmits an output from the first MOSFET to a corresponding readout wire R1. Each of the plurality of cells is provided with a third MOSFET M1 which generates hot electrons in the ISFET and which injects a charge to the floating gate of the ISFET. Here, the second MOSFET and the third MOSFET are separately controlled.

Abstract: Provided is a biomolecule measuring device capable of effectively reducing measurement noise occurring when measuring a biomolecule sample using a semiconductor sensor. This biomolecule measuring device generates a trigger to react a sample with a reagent after starting to send the reagent onto the semiconductor sensor that detects ion concentration (see FIG. 7).

Abstract: Provided is a sensor device wherein malfunction due to a negative surge is suppressed. This sensor device is provided with: a sensor element wherein electrical characteristics change corresponding to physical quantities; a signal processing circuit that processes output signals of the sensor element; a first transistor element that supplies currents to the sensor element and the signal processing circuit; a control circuit that controls a base current of the first transistor element; a power supply terminal; and a ground terminal. The sensor device is characterized in that the control circuit is provided with a limiting section that limits a current flowing from the ground terminal toward a base terminal of the first transistor element.

Abstract: Provided is an electronic device which can easily measure a standby current of an internal circuit of an electronic device after burn-in. The electronic device includes: a power source terminal; a regulator that generates a predetermined voltage from a voltage of the power source terminal; an internal circuit that is operated by an output voltage of the regulator; and a standby terminal through which the regulator and the internal circuit are set to a low power consumption state.