Patents by Inventor Yoshimitu Hiroshima

Yoshimitu Hiroshima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid state image sensor
    Patent number: 5043783
    Abstract: A solid state image sensor includes a semiconductor substrate of a first conductivity type, in a plurality of cell units formed in the surface region of the semiconductor substrate. Each of the cell units includes a photo detector portion and an electric charge reading portion. The photo detector portion includes a first impurity region of a second conductivity type formed in the surface region of the semiconductor substrate and a second impurity diffusion region of the first conductivity type formed in the surface region of the first impurity region. The electric charge reading portion includes a third impurity region of the second conductivity type formed in the surface of the semiconductor substrate, a first insulation film formed on the third impurity diffusion region and an electrode formed in the first insulation film.
    Type: Grant
    Filed: September 22, 1989
    Date of Patent: August 27, 1991
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shigenori Matsumoto, Toshihiro Kuriyama, Yoshimitu Hiroshima