Abstract: A film forming apparatus for forming a silicon carbide film on a target substrate includes a substrate support on which the target substrate is placed, a gas supply mechanism configured to form a flow of a raw material gas along a direction perpendicular to a central axis of the substrate support from outside of the substrate support, and an induction coil configured to heat the target substrate. The gas supply mechanism supplies, in addition to a first Si-containing gas containing silicon without containing carbon and a first C-containing gas containing carbon without containing silicon, at least one of a second Si-containing gas having a thermal decomposition temperature higher than that of the first Si-containing gas and containing silicon without containing carbon and a second C-containing gas having a thermal decomposition temperature lower than that of the first C-containing gas and containing carbon without containing silicon, as the raw material gas.

Abstract: A charge eliminating mechanism of the invention includes a mechanical switching mechanism (e.g., a POGO pin), and a wiring line so connected as to be able to be electrically connected to the POGO pin. The wiring line can include a resistor. A block holds the POGO pin. The POGO pin comes into contact with a charge eliminating plate provided on a stage, so that the static electricity of the stage is discharged to ground.

Abstract: A charge eliminating mechanism of the invention includes a mechanical switching mechanism (e.g., a POGO pin), and a wiring line so connected as to be able to be electrically connected to the POGO pin. The wiring line can include a resistor. A block holds the POGO pin. The POGO pin comes into contact with a charge eliminating plate provided on a stage, so that the static electricity of the stage is discharged to ground.