Abstract: The present invention is to provide a method for refining hydrogen with a hydrogen refining device in which the inside of a cell is divided into a primary side space and a secondary side space by palladium alloy capillaries each having one end being closed and a tube sheet supporting the open end of the palladium alloy capillaries, in which impurity-containing hydrogen is introduced from the primary side space to allow hydrogen to permeate the palladium alloy capillaries so as to collect pure hydrogen from the secondary side space. The method for refining hydrogen has a capability of decreasing the removed amount of gas containing impurities and efficiently collecting pure hydrogen from the secondary side space. From hydrogen with 1000 ppm or less of impurities as raw material hydrogen, gas containing impurities that does not penetrate the palladium alloy capillaries is removed from the primary side space at the flow rate of 10% or less of the introduction flow rate of the raw material hydrogen.

Abstract: The present invention is to provide a means for easily replacing palladium alloy capillaries in a hydrogen purification device formed by using hydrogen separation membrane formed from the palladium alloy capillaries. The hydrogen purification device can be easily disassembled into a palladium alloy membrane unit and a storage structure thereof. A palladium alloy membrane unit is provided with a plurality of palladium alloy capillaries, a disk-shaped tube sheet supporting the palladium alloy capillaries, a pure hydrogen discharge pipe having a cylinder being in close contact with a periphery of the tube sheet at one end, a joint connecting with a pure hydrogen outlet of the storage structure at the other end, and preferably a joint being in close contact with an opening of a container of the storage structure at a position between the cylinder and the outlet joint.

Abstract: The present invention is to provide a method for refining hydrogen with a hydrogen refining device in which the inside of a cell is divided into a primary side space and a secondary side space by palladium alloy capillaries each having one end being closed and a tube sheet supporting the open end of the palladium alloy capillaries, in which impurity-containing hydrogen is introduced from the primary side space to allow hydrogen to permeate the palladium alloy capillaries so as to collect pure hydrogen from the secondary side space. The method for refining hydrogen has a capability of decreasing the removed amount of gas containing impurities and efficiently collecting pure hydrogen from the secondary side space. From hydrogen with 1000 ppm or less of impurities as raw material hydrogen, gas containing impurities that does not penetrate the palladium alloy capillaries is removed from the primary side space at the flow rate of 10% or less of the introduction flow rate of the raw material hydrogen.

Abstract: The present invention is to provide a means for easily replacing palladium alloy capillaries in a hydrogen purification device formed by using hydrogen separation membrane formed from the palladium alloy capillaries. The hydrogen purification device can be easily disassembled into a palladium alloy membrane unit and a storage structure thereof. A palladium alloy membrane unit is provided with a plurality of palladium alloy capillaries, a disk-shaped tube sheet supporting the palladium alloy capillaries, a pure hydrogen discharge pipe having a cylinder being in close contact with a periphery of the tube sheet at one end, a joint connecting with a pure hydrogen outlet of the storage structure at the other end, and preferably a joint being in close contact with an opening of a container of the storage structure at a position between the cylinder and the outlet joint.

Abstract: A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

Abstract: A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

Abstract: A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

Abstract: There is disclosed a chemical vapor deposition apparatus of semi-conductor film comprising a horizontal type reaction tube equipped with a susceptor to carry a substrate, a heater to heat the substrate, an ingredient gas introduction zone arranged in a way that feeding direction to the reaction tube of the ingredient gas becomes substantially parallel to the substrate, and a reaction gas exhaust division, and further having a pressurized gas introduction zone on the wall of the reaction tube facing the substrate, wherein the structure of at least one part of the pressurized gas introduction zone at an upstream side of an ingredient gas passageway is such that the pressurized gas supplied from said part of the pressurized gas introduction zone is fed in an oblique down or a horizontal direction oriented to a downstream side of the ingredient gas passageway. Also, disclosed herein a chemical vapor deposition method using the apparatus.