Patents by Inventor Yoshinao Takahashi
Yoshinao Takahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240090329Abstract: A compound includes: at least one group represented by a formula (11) below; and a single benz[de]anthracene derivative skeleton represented by a formula (1000) below in a molecule, in which Ar1 is a substituted or unsubstituted aryl group including at least four rings, at least one of R10 to R19 is a group represented by the formula (11), L1 is a substituted or unsubstituted arylene group having 6 to 15 ring carbon atoms or a substituted or unsubstituted divalent heterocyclic group having 5 to 15 ring atoms, and mx is 1, 2, or 3.Type: ApplicationFiled: October 1, 2021Publication date: March 14, 2024Applicant: IDEMITSU KOSAN CO.,LTD.Inventors: Hiroaki ITOI, Yuki NAKANO, Taro YAMAKI, Maiko IIDA, Takamoto MORITA, Shintaro BAN, Ryota TAKAHASHI, Yu KUDO, Yoshinao SHIRASAKI
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Patent number: 11814726Abstract: Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.Type: GrantFiled: December 22, 2022Date of Patent: November 14, 2023Assignee: KANTO DENKA KOGYO CO., LTD.Inventors: Yoshinao Takahashi, Katsuya Fukae, Korehito Kato
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Publication number: 20230131072Abstract: Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.Type: ApplicationFiled: December 22, 2022Publication date: April 27, 2023Inventors: Yoshinao TAKAHASHI, Katsuya FUKAE, Korehito KATO
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Patent number: 11584989Abstract: Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.Type: GrantFiled: March 26, 2018Date of Patent: February 21, 2023Assignee: KANTO DENKA KOGYO CO., LTD.Inventors: Yoshinao Takahashi, Katsuya Fukae, Korehito Kato
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Patent number: 11434565Abstract: This invention provides a cleaning method that uses a cleaning gas composition for a semiconductor manufacturing device, including a monofluorohalogen compound represented by XF (in which X is Cl, Br or I) as the main component, and provides a method for removing unwanted film, such as a Si-containing deposit, attached to the interior of the processing room or processing vessel after a processing operation without damaging the interior of the processing room or processing vessel using such monofluorohalogen compound.Type: GrantFiled: March 29, 2017Date of Patent: September 6, 2022Assignee: KANTO DENKA KOGYO CO., LTD.Inventors: Yoshinao Takahashi, Korehito Kato
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Publication number: 20220169482Abstract: An elevator device includes a guide rail (1), a car (3), and a guide device (4). The car (3) is movable in a horizontal direction at a specific height. The guide device (4) includes a supporting member (11) and a guide member (12). The guide member (12) is displaceable to a first position for restricting movement of the car (3) in the horizontal direction and guiding up-down movement of the car (3) and a second position where the guide member (12) does not come into contact with the guide rail (1) when the car (3) moves in the horizontal direction.Type: ApplicationFiled: June 17, 2019Publication date: June 2, 2022Applicant: Mitsubishi Electric CorporationInventors: Takehiro KATO, Yasuo WATANABE, Taiki MORIKURA, Yoshinao TAKAHASHI
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Patent number: 11315797Abstract: Provided is a plasma etching method that enables, in a semiconductor fabrication process, selective processing of a film consisting of a single material, such as SiO2 or SiN, or a composite material of SiO2 and SiN over a mask material as well as processing into satisfactorily vertical processed shapes.Type: GrantFiled: June 21, 2019Date of Patent: April 26, 2022Assignee: KANTO DENKA KOGYO CO., LTD.Inventors: Korehito Kato, Yoshinao Takahashi, Mitsuharu Shimoda, Yoshihiko Iketani
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Patent number: 11183393Abstract: A method of atomic layer etching a silicon oxide film or a silicon nitride film is provided. Atomic layer etching (ALE) is performed by repeating three steps of (1) hydrogenation step of hydrogenating a surface by irradiating a silicon oxide film or a silicon nitride film with a plasma containing H, (2) acid halide adsorption step of causing chemisorption of an acid halide represented by a formula of Rf—COX (Rf is H, F, a substituent consisting of C and F or consisting of C, H, and F, or —COX; each X is independently any halogen atom of F, Cl, Br and I) on the surface by reacting the acid halide with the hydrogenated surface through exposure to the acid halide, and (3) etching step of etching a single atomic layer by inducing chemical reactions on the surface of the acid halide-adsorbed silicon oxide film or silicon nitride film through irradiation with a plasma containing a noble gas (at least any one of He, Ar, Ne, Kr, and Xe).Type: GrantFiled: September 14, 2018Date of Patent: November 23, 2021Assignee: KANTO DENKA KOGYO CO., LTD.Inventors: Korehito Kato, Katsuya Fukae, Yoshinao Takahashi
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Publication number: 20210287911Abstract: A method of atomic layer etching a silicon oxide film or a silicon nitride film is provided. Atomic layer etching (ALE) is performed by repeating three steps of (1) hydrogenation step of hydrogenating a surface by irradiating a silicon oxide film or a silicon nitride film with a plasma containing H, (2) acid halide adsorption step of causing chemisorption of an acid halide represented by a formula of Rf—COX (Rf is H, F, a substituent consisting of C and F or consisting of C, H, and F, or —COX; each X is independently any halogen atom of F, Cl, Br and I) on the surface by reacting the acid halide with the hydrogenated surface through exposure to the acid halide, and (3) etching step of etching a single atomic layer by inducing chemical reactions on the surface of the acid halide-adsorbed silicon oxide film or silicon nitride film through irradiation with a plasma containing a noble gas (at least any one of He, Ar, Ne, Kr, and Xe).Type: ApplicationFiled: September 14, 2018Publication date: September 16, 2021Inventors: Korehito KATO, Katsuya FUKAE, Yoshinao TAKAHASHI
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Publication number: 20210285100Abstract: A method for effectively removing fluorine atoms remaining in a semiconductor fabrication chamber after cleaning the chamber with chlorine trifluoride is provided. The method includes exposing the inside of the chamber after semiconductor fabrication to chlorine trifluoride to remove an object to be removed remaining in the chamber and then thermally treating the inside of the chamber with at least one gas selected from the group consisting of nitrogen, argon, helium, and hydrogen. It is preferred that the exposure to chlorine trifluoride is carried out while monitoring the chamber inside temperature and that the chlorine trifluoride feed is ceased when the inside temperature decreases to a predetermined temperature.Type: ApplicationFiled: August 29, 2017Publication date: September 16, 2021Inventors: Hitoshi HABUKA, Yoshinao TAKAHASHI, Katsuya FUKAE
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Publication number: 20210233774Abstract: Provided is a plasma etching method that enables, in a semiconductor fabrication process, selective processing of a film consisting of a single material, such as SiO2 or SiN, or a composite material of SiO2 and SiN over a mask material as well as processing into satisfactorily vertical processed shapes It is possible, for example, to enhance selectivity over a mask material or other materials excluding an etching target, to reduce damage on sidewalls, and to suppress etching in the lateral direction by generating a plasma of a gas compound having a thioether skeleton represented by general formula (1) or a mixed gas thereof and etching a film consisting of a composite material or a single material, such as SiO2 or SiN, thereby depositing a protective film that contains sulfur atoms and has a lower content of fluorine atoms than the cases of using common hydrofluorocarbon gases.Type: ApplicationFiled: June 21, 2019Publication date: July 29, 2021Inventors: Korehito KATO, Yoshinao TAKAHASHI, Mitsuharu SHIMODA, Yoshihiko IKETANI
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Publication number: 20210108311Abstract: Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.Type: ApplicationFiled: March 26, 2018Publication date: April 15, 2021Inventors: Yoshinao TAKAHASHI, Katsuya FUKAE, Korehito KATO
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Patent number: 10899615Abstract: A chlorine fluoride feeding device and feeding process are provided that can stably generate industrially applicable chlorine fluoride (ClF), control flow rate, and provide continual feed. The feeding process of chlorine fluoride of this invention is a feeding process to feed chlorine fluoride generated by loading a gas that contains fluorine atoms and a gas that contains chlorine atoms to a flow-type heat reactor or a plasma reactor, and it can stably generate and safely feed chlorine fluoride for a long time by reacting chlorine fluoride that is difficult to pack at a high pressure, such that an amount that can be packed in a gas container such as a gas cylinder is limited, with two or more types of gas materials that can be packed safely in a gas container by liquefaction, or with such gas material and a solid material.Type: GrantFiled: March 29, 2017Date of Patent: January 26, 2021Assignee: KANTO DENKA KOGYO CO., LTD.Inventors: Yoshinao Takahashi, Korehito Kato, Yoshimasa Sakurai, Hiroki Takizawa, Sho Kikuchi, Shinichi Kawaguchi, Yoshihiko Iketani, Yukinobu Shibusawa
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Patent number: 10629449Abstract: A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by CxHyFz, wherein x is an integer of from 3 to 5, and relationships y+z?2x and y?z are satisfied. Also, a silicon oxide film is etched with high selectivity relative to a silicon nitride film by controlling the ratio among the hydrofluorocarbon, oxygen, argon, etc., included in the hydrofluorocarbon-containing etching gas composition.Type: GrantFiled: October 13, 2016Date of Patent: April 21, 2020Assignee: Kanto Denka Kogyo Co., Ltd.Inventors: Yoshinao Takahashi, Korehito Kato, Tetsuya Fukasawa, Yoshihiko Iketani
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Patent number: 10431472Abstract: A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by CxHyFz, wherein x is an integer of from 3 to 5, and relationships y+z?2x and y?z are satisfied. Also, a silicon oxide film is etched with high selectivity relative to a silicon nitride film by controlling the ratio among the hydrofluorocarbon, oxygen, argon, etc., included in the hydrofluorocarbon-containing etching gas composition.Type: GrantFiled: October 22, 2018Date of Patent: October 1, 2019Assignee: KANTO DENKA KOGYO CO., LTD.Inventors: Yoshinao Takahashi, Korehito Kato, Tetsuya Fukasawa, Yoshihiko Iketani
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Patent number: 10287499Abstract: Provided are an etching gas composition and an etching method which enable an object, such as a substrate to be etched, to be efficiently precision processed during thin film formation, and which enable efficient removal of an accumulated or adhered silicon-based compound, other than the object such as the substrate to be etched, by means of plasma etching. The etching gas composition is characterized by containing: (1) a fluorinated halogen compound represented by XF (X is Cl, Br or I) as a primary component; (2) F2; (3) a fluorinated halogen compound represented by XFn (X is Cl, Br or I, and n is an integer of 3 or higher); (4) HF; (5) O2; and (6) at least one type of halogen gas molecule selected from among Cl2, Br2 and I2.Type: GrantFiled: August 12, 2015Date of Patent: May 14, 2019Assignee: KANTO DENKA KOGYO CO., LTD.Inventors: Yoshinao Takahashi, Korehito Kato
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Publication number: 20190112705Abstract: This invention provides a cleaning method that uses a cleaning gas composition for a semiconductor manufacturing device, including a monofluorohalogen compound represented by XF (in which X is Cl, Br or I) as the main component, and provides a method for cleaning the unwanted film deposited on the interior of the processing room or processing vessel without damaging the interior of the processing room or processing vessel using such monofluorohalogen compound. It is a method comprising in a process of removing a Si-containing deposit attached to an interior of a processing room or processing vessel after performance of a processing operation in the interior of the processing room or processing vessel used for manufacturing a semiconductor device: supplying monofluorohalogen gas represented by XF (wherein X is Cl, Br or I) into the processing room or processing vessel to remove the Si-containing deposit, wherein a temperature in the processing room or processing vessel is 400° C.Type: ApplicationFiled: March 29, 2017Publication date: April 18, 2019Inventors: Yoshinao TAKAHASHI, Korehito KATO
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Publication number: 20190055124Abstract: A chlorine fluoride feeding device and feeding process are provided that can stably generate industrially applicable chlorine fluoride (ClF), control flow rate, and provide continual feed. The feeding process of chlorine fluoride of this invention is a feeding process to feed chlorine fluoride generated by loading a gas that contains fluorine atoms and a gas that contains chlorine atoms to a flow-type heat reactor or a plasma reactor, and it can stably generate and safely feed chlorine fluoride for a long time by reacting chlorine fluoride that is difficult to pack at a high pressure, such that an amount that can be packed in a gas container such as a gas cylinder is limited, with two or more types of gas materials that can be packed safely in a gas container by liquefaction, or with such gas material and a solid material.Type: ApplicationFiled: March 29, 2017Publication date: February 21, 2019Inventors: Yoshinao TAKAHASHI, Korehito KATO, Yoshimasa SAKURAI, Hiroki TAKIZAWA, Sho KlKUCHI, Shinichi KAWAGUCHI, Yoshihiko KETANI, Yukinobu SHIBUSAWA
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Publication number: 20190057878Abstract: A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by CxHyFz, wherein x is an integer of from 3 to 5, and relationships y+z?2x and y?z are satisfied. Also, a silicon oxide film is etched with high selectivity relative to a silicon nitride film by controlling the ratio among the hydrofluorocarbon, oxygen, argon, etc., included in the hydrofluorocarbon-containing etching gas composition.Type: ApplicationFiled: October 22, 2018Publication date: February 21, 2019Inventors: Yoshinao TAKAHASHI, Korehito KATO, Tetsuya FUKASAWA, Yoshihiko IKETANI
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Publication number: 20180251679Abstract: Provided are an etching gas composition and an etching method which enable an object, such as a substrate to be etched, to be efficiently precision processed during thin film formation, and which enable efficient removal of an accumulated or adhered silicon-based compound, other than the object such as the substrate to be etched, by means of plasma etching. The etching gas composition is characterized by containing: (1) a fluorinated halogen compound represented by XF (X is Cl, Br or I) as a primary component; (2) F2; (3) a fluorinated halogen compound represented by XFn (X is Cl, Br or I, and n is an integer of 3 or higher); (4) HF; (5) O2; and (6) at least one type of halogen gas molecule selected from among Cl2, Br2 and I2.Type: ApplicationFiled: August 12, 2015Publication date: September 6, 2018Inventors: Yoshinao TAKAHASHI, Korehito KATO