Patents by Inventor Yoshinari Amano
Yoshinari Amano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7547412Abstract: A composite material is a Mo—Cu based composite material having a Cu content of 30 to 70 weight % and containing a copper pool phase and an Mo—Cu based composite phase. The copper pool phase is contained in an amount of 10-50 weight %. A heat-sink member uses the composite material.Type: GrantFiled: October 28, 2003Date of Patent: June 16, 2009Assignee: A.L.M.T. CorporationInventors: Masayuki Itoh, Tadashi Arikawa, Norio Hirayama, Yoshinari Amano, Nobuyuki Saitoh
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Publication number: 20060246314Abstract: A material for a semiconductor-mounting heat dissipation substrate comprises a copper-molybdenum rolled composite obtained by impregnating melted copper into a void between powder particles of a molybdenum powder compact to obtain a molybdenum-copper composite and then rolling the composite. In a final rolling direction of a plate material, the coefficient of linear expansion is 8.3×10?6/K at 30-800° C. The material for a semiconductor-mounting heat dissipation substrate is superior in thermal conductivity to a CMC clad material and easy in machining by a punch press. The substrate material is used as a heat dissipation substrate (13) of a ceramic package (11).Type: ApplicationFiled: June 23, 2006Publication date: November 2, 2006Inventors: Mitsuo Osada, Norio Hirayama, Tadashi Arikawa, Yoshinari Amano, Hidetoshi Maesato, Hidefumi Hayashi, Hiroshi Murai
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Patent number: 7083759Abstract: A material for a semiconductor-mounting heat dissipation substrate comprises a copper-molybdenum rolled composite obtained by impregnating melted copper into a void between powder particles of a molybdenum powder compact to obtain a composite of molybdenum and copper and then rolling the composite. In a final rolling direction of a plate material, the coefficient of linear expansion is 8.3×10?6/K at 30–800° C. The material for a semiconductor-mounting heat dissipation substrate is superior in thermal conductivity to a CMC clad material and easy in machining by a punch press. The substrate material is used as a heat dissipation substrate (13) of a ceramic package (11).Type: GrantFiled: April 12, 2001Date of Patent: August 1, 2006Assignee: A.L.M.T. Corp.Inventors: Mitsuo Osada, Norio Hirayama, Tadashi Arikawa, Yoshinari Amano, Hidetoshi Maesato, Hidefumi Hayashi, Hiroshi Murai
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Publication number: 20050287387Abstract: A composite material is a Mo—Cu based composite material having a Cu content of 30 to 70 weight % and containing a copper pool phase and an Mo—Cu based composite phase. The copper pool phase is contained in an amount of 10-50 weight %. A heat-sink member uses the composite material.Type: ApplicationFiled: October 28, 2003Publication date: December 29, 2005Inventors: Masayuki Itoh, Tadashi Arikawa, Norio Hirayama, Yoshinari Amano, Nobuyuki Saitoh
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Patent number: 6926861Abstract: A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu—Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu—Mo composite, and rolling the Cu—Mo composite into a sheet substrate.Type: GrantFiled: September 29, 2003Date of Patent: August 9, 2005Assignee: Tokyo Tungsten Co., Ltd.Inventors: Norio Hirayama, Mitsuo Osada, Akira Ichida, Yoshinari Amano, Kiyoshi Asai, Hidetoshi Maesato, Tadashi Arikawa, Kenji Sakimae
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Publication number: 20040056352Abstract: A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu—Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu—Mo composite, and rolling the Cu—Mo composite into a sheet substrate.Type: ApplicationFiled: September 29, 2003Publication date: March 25, 2004Applicant: TOKYO TUNGSTEN CO., LTD.Inventors: Norio Hirayama, Mitsuo Osada, Akira Ichida, Yoshinari Amano, Kiyoshi Asai, Hidetoshi Maesato, Tadashi Arikawa, Kenji Sakimae
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Patent number: 6693353Abstract: A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu—Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu—Mo composite, and rolling the Cu—Mo composite into a sheet substrate. In the isostatic molding process, at least two or more plates.Type: GrantFiled: February 18, 1999Date of Patent: February 17, 2004Assignee: Tokyo Tungsten Co., Ltd.Inventors: Norio Hirayama, Mitsuo Osada, Akira Ichida, Yoshinari Amano, Kiyoshi Asai, Hidetoshi Maesato, Tadashi Arikawa, Kenji Sakimae
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Patent number: 6595821Abstract: A high-quality and high-reliability rotary anode target for X-ray tubes, of which the mechanical strength at high temperatures is increased and which is applicable not only to low-speed rotation (at least 3,000 rpm) but also even to high-speed rotation at high temperatures, and also a method for producing it. The rotary anode has a two-layered structure to be formed by laminating an Mo alloy substrate that comprises from 0.2% by weight to 1.5% by weight of TiC with the balance of substantially Mo, and an X-ray generating layer of a W—Re alloy that overlies the substrate.Type: GrantFiled: April 20, 2001Date of Patent: July 22, 2003Assignee: Tokyo Tungsten Co., Ltd.Inventors: Masayuki Itoh, Koji Asahi, Mitsuo Osada, Yoshinari Amano, Tomohiro Takida
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Publication number: 20010014568Abstract: Provided are a high-quality and high-reliability rotary anode target for X-ray tubes, of which the mechanical strength at high temperatures is increased and which is applicable not only to low-speed rotation (at least 3,000 rpm) but also even to high-speed rotation at high temperatures, and also a method for producing it. The rotary anode has a two-layered structure to be formed by laminating an Mo alloy substrate that comprises from 0.2% by weight to 1.5% by weight of TiC with the balance of substantially Mo, and an X-ray generating layer of a W—Re alloy that overlies the substrate.Type: ApplicationFiled: April 20, 2001Publication date: August 16, 2001Inventors: Masayuki Itoh, Koji Asahi, Mitsuo Osada, Yoshinari Amano, Tomohiro Takida
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Patent number: 6233311Abstract: Provided are a high-quality and high-reliability rotary anode target for X-ray tubes, of which the mechanical strength at high temperatures is increased and which is applicable not only to low-speed rotation (at least 3,000 rpm) but also even to high-speed rotation at high temperatures, and also a method for producing it. The rotary anode has a two-layered structure to be formed by laminating an Mo alloy substrate that comprises from 0.2% by weight to 1.5% by weight of TiC with the balance of substantially Mo, and an X-ray generating layer of a W—Re alloy that overlies the substrate.Type: GrantFiled: February 26, 1999Date of Patent: May 15, 2001Assignee: Tokyo Tungsters Co., Ltd.Inventors: Masayuki Itoh, Koji Asahi, Mitsuo Osada, Yoshinari Amano, Tomohiro Takida
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Patent number: 5708959Abstract: This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.Type: GrantFiled: April 22, 1996Date of Patent: January 13, 1998Assignee: Sumitomo Electric Industries, Ltd.Inventors: Mituo Osada, Yoshinari Amano, Nobuo Ogasa, Akira Ohtsuka
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Patent number: 5563101Abstract: This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in an integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.Type: GrantFiled: January 4, 1995Date of Patent: October 8, 1996Assignee: Sumitomo Electric Industries, Ltd.Inventors: Mituo Osada, Yoshinari Amano, Nobuo Ogasa, Akira Ohtsuka
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Patent number: 5525428Abstract: This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in an integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.Type: GrantFiled: January 4, 1995Date of Patent: June 11, 1996Assignee: Sumitomo Electric Industries, Ltd.Inventors: Mituo Osada, Yoshinari Amano, Nobuo Ogasa, Akira Ohtsuka
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Patent number: 5409864Abstract: This invention relates to a substrate for mounting a semiconductor chip in an integrated circuit wherein a sintered compact containing copper at 2 to 30 wt. % and tungsten and/or molybdenum is employed as a substrate which efficiently radiates heat developed from the semiconductor chip mounted thereon and said substrate having a thermal expansion coefficient similar to those of semiconductor chip and other enclosure materials.Type: GrantFiled: August 2, 1994Date of Patent: April 25, 1995Assignee: Sumitomo Electric Industries, Ltd.Inventors: Mituo Osada, Yoshinari Amano, Nobuo Ogasa, Akira Ohtsuka
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Patent number: 5342573Abstract: A method of producing a tungsten heavy alloy product according to a powder metallurgical procedure utilizing the injection molding technique which enables production of tungsten heavy alloy products having high dimensional accuracy and complex configuration and yet having high physical strength and toughness in high productivity and at low cost. A powder mixture of tungsten powder and nickel powder, iron powder or copper powder is mixed with an organic binder and they are kneaded together. The kneaded mixture is injection molded into a predetermined shape, and thereafter the binder is removed from the molded product. Subsequently, the molded product is sintered in a temperature range of from the melting point of the bond phase of nickel, iron or copper to +50.degree. C. relative to the melting point.Type: GrantFiled: August 20, 1992Date of Patent: August 30, 1994Assignee: Sumitomo Electric Industries, Ltd.Inventors: Yoshinari Amano, Masahiro Omati, Junzo Matsumura
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Patent number: 5099310Abstract: This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.Type: GrantFiled: January 17, 1989Date of Patent: March 24, 1992Assignee: Sumitomo Electric Industries, Ltd.Inventors: Mituo Osada, Yoshinari Amano, Nobuo Ogasa, Akira Ohtusuka
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Patent number: 5086333Abstract: This invention relates to a substrate for mounting a semiconductor chip in an integrated circuit wherein a sintered compact containing copper at 2 to 30 wt. % and tungsten and/or molybdenum is employed as a substrate which efficiently radiates heat developed from the semiconductor chip mounted thereon and said substrate having a thermal expansion coefficient similar to those of semiconductor chip and other enclosure materials.Type: GrantFiled: July 13, 1989Date of Patent: February 4, 1992Assignee: Sumitomo Electric Industries, Ltd.Inventors: Mituo Osada, Yoshinari Amano, Nobuo Ogasa, Akira Ohtsuka
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Patent number: 4457780Abstract: The invention relates to electric contact materials for use in switches, such as moulded circuit breakers, air circuit breakers, magnetic switches, etc.The electric contact materials comprise 5-60 weight % iron group metals, 1-11 weight % graphite, 5-70 weight % refractory materials, and the residual part consisting of silver, said refractory materials being held in the state of dispersion in the iron group metals and/or silver, thereby providing welding resistance, wear resistance, and insulation resistance as well as high practical utility of low temperature rise.Type: GrantFiled: April 12, 1982Date of Patent: July 3, 1984Assignee: Sumitomo Electric Industries, Ltd.Inventors: Mitsuo Osada, Nobuhito Kuroishi, Yoshinari Amano, Akira Fukui
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Patent number: 4072515Abstract: This invention relates to an electrical contact material of silver-indium oxide type, which is produced by the internal oxidation of an alloy consisting of 6-15% by weight indium, at least one of 0.2-8% by weight tin and 0.01-1% by weight magnesium and the balance silver. This alloy may contain further 0.01-1% by weight of nickel.Type: GrantFiled: July 3, 1974Date of Patent: February 7, 1978Assignee: Sumitomo Electric Industries, Ltd.Inventors: Kenya Motoyoshi, Masahiro Kume, Yoshinari Amano
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Patent number: 4050930Abstract: A material for an electrical contact is produced by an internal oxidation of an alloy consisting of 1-15% by weight of indium, 0.5-12% by weight of tin, 0.01-5% by weight of one selected from manganese and molybdenum, and the balance silver. In a modification an iron group element may be mixed in a range less than 0.5% by weight.Type: GrantFiled: March 16, 1976Date of Patent: September 27, 1977Assignee: Sumitomo Electric Industries, Ltd.Inventors: Kenya Motoyoshi, Masahiro Kume, Yoshinari Amano