Patents by Inventor Yoshinari Hatazaki

Yoshinari Hatazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11557485
    Abstract: A plasma processing apparatus which forms a first film on a pattern formed on a substrate having dense and coarse areas, and then performs sputtering or etching on the first film.
    Type: Grant
    Filed: June 24, 2021
    Date of Patent: January 17, 2023
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshihide Kihara, Toru Hisamatsu, Kensuke Taniguchi, Yoshinari Hatazaki
  • Patent number: 11454744
    Abstract: A method for producing a microlens according to the present invention includes an etching step and a surface treatment step. In the etching step, a target object which is obtained by forming a second organic film having a lens shape on a first organic film that is formed on a substrate is subjected to etching that uses a plasma of a first processing gas, while using the second organic film as a mask, so that the first organic film is etched so as to transfer the lens shape of the second organic film to the first organic film, thereby forming a microlens in the first organic film. In the surface treatment step, a surface treatment is performed so as to smooth the surface of the microlens that is formed in the first organic film.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: September 27, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshinari Hatazaki, Takashi Shinyama
  • Publication number: 20210320011
    Abstract: A plasma processing apparatus which forms a first film on a pattern formed on a substrate having dense and coarse areas, and then performs sputtering or etching on the first film.
    Type: Application
    Filed: June 24, 2021
    Publication date: October 14, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yoshihide KIHARA, Toru HISAMATSU, Kensuke TANIGUCHI, Yoshinari HATAZAKI
  • Patent number: 11094551
    Abstract: A plasma processing method performed using a plasma processing apparatus includes a first step of forming a first film on a pattern formed on a substrate and having dense and coarse areas, and a second step of performing sputtering or etching on the first film.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: August 17, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshihide Kihara, Toru Hisamatsu, Kensuke Taniguchi, Yoshinari Hatazaki
  • Publication number: 20200194274
    Abstract: A plasma processing method performed using a plasma processing apparatus includes a first step of forming a first film on a pattern formed on a substrate and having dense and coarse areas, and a second step of performing sputtering or etching on the first film.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 18, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yoshihide KIHARA, Toru HISAMATSU, Kensuke TANIGUCHI, Yoshinari HATAZAKI
  • Publication number: 20200192004
    Abstract: A method for producing a microlens according to the present invention includes an etching step and a surface treatment step. In the etching step, a target object which is obtained by forming a second organic film having a lens shape on a first organic film that is formed on a substrate is subjected to etching that uses a plasma of a first processing gas, while using the second organic film as a mask, so that the first organic film is etched so as to transfer the lens shape of the second organic film to the first organic film, thereby forming a microlens in the first organic film. In the surface treatment step, a surface treatment is performed so as to smooth the surface of the microlens that is formed in the first organic film.
    Type: Application
    Filed: June 7, 2019
    Publication date: June 18, 2020
    Inventors: Yoshinari HATAZAKI, Takashi SHINYAMA
  • Patent number: 10658189
    Abstract: A method of selectively etching a first region R1 made of silicon oxide with respect to a second region R2 made of silicon nitride by performing a plasma processing upon a processing target object is provided. The processing target object has the second region R2 forming a recess; the first region R1 configured to fill the recess; and a mask MK provided on the first region R1. The method includes a first process of generating plasma of a processing gas containing a fluorocarbon gas, and a second process of etching the first region with radicals of fluorocarbon contained in a deposit. In the second process, a high frequency power contributing to the generating of the plasma is applied in a pulse shape, and these processes are repeated.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: May 19, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshinari Hatazaki, Wakako Ishida, Kensuke Taniguchi
  • Publication number: 20190080917
    Abstract: A method of selectively etching a first region R1 made of silicon oxide with respect to a second region R2 made of silicon nitride by performing a plasma processing upon a processing target object is provided. The processing target object has the second region R2 forming a recess; the first region R1 configured to fill the recess; and a mask MK provided on the first region R1. The method includes a first process of generating plasma of a processing gas containing a fluorocarbon gas, and a second process of etching the first region with radicals of fluorocarbon contained in a deposit. In the second process, a high frequency power contributing to the generating of the plasma is applied in a pulse shape, and these processes are repeated.
    Type: Application
    Filed: May 16, 2017
    Publication date: March 14, 2019
    Inventors: Yoshinari Hatazaki, Wakako Ishida, Kensuke Taniguchi