Abstract: A wheel includes a boss, a rim, and a web. A rim-width center is positioned on a flange side of the rim with respect to a boss-width center. A plate-thickness center line of the web has a linear shape when the wheel is viewed in a longitudinal section. The plate-thickness center line is inclined with respect to a radial direction of the wheel in such a way as to be farther from the flange as the plate-thickness center line extends outward in the radial direction. When a distance in an axial direction of the wheel from a side face of the rim to an outer end of the plate-thickness center line is taken as “Pw” and a length of the rim in the axial direction is taken as “Wr”, Pw/Wr is less than 0.40.

Abstract: A semiconductor device includes a capacitor including a first connection terminal, a second connection terminal, and a second insulating member disposed between the first connection terminal and the second connection terminal, and a semiconductor module including a multi-layer terminal portion in which a first power terminal, a first insulating member, and a second power terminal are sequentially stacked. The first connection terminal and the second connection terminal extend to an outside, the first power terminal includes a first bonding area electrically connected to the first connection terminal, the second power terminal includes a second bonding area electrically connected to the second connection terminal, and the first insulating member includes a terrace portion extending from an end portion of the second power terminal toward the first connection terminal in a plan view of the semiconductor module.

Abstract: The present invention is aimed to provide a method for producing a glass substrate with a thickness of not more than 200 ?m, which is satisfied with the quality required for a substrate on which a thin-film electric circuit is formed, and a sheet glass substrate obtained according to this method. The present invention is concerned with a method for producing a glass substrate having a sheet thickness of from 10 to 200 ?m, including a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, wherein an average cooling rate in a temperature range of from the (annealing point +200° C.) to the (annealing point +50° C.) is controlled to the range of from 300 to 2,500° C./min.

Abstract: The present invention is aimed to provide a method for producing a glass substrate with a thickness of not more than 200 ?m, which is satisfied with the quality required for a substrate on which a thin-film electric circuit is formed, and a sheet glass substrate obtained according to this method. The present invention is concerned with a method for producing a glass substrate having a sheet thickness of from 10 to 200 ?m, including a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, wherein an average cooling rate in a temperature range of from the (annealing point+200° C.) to the (annealing point+50° C.) is controlled to the range of from 300 to 2,500° C./min.

Abstract: Provided is a method of producing a tempered glass sheet, comprising applying tempering treatment to a glass sheet by increasing the content of SiO2 in terms of mass in a surface region of a glass sheet through application of thermal treatment to the glass sheet to 1.03 or more times that in an interior region positioned at a depth of 1 ?m from a surface of the glass sheet.

Abstract: A manufacturing method for a tempered glass substrate of the present invention includes: melting glass raw materials to obtain molten glass; forming the molten glass into a sheet shape to obtain a glass substrate having a long side dimension of 1,000 mm or more and a short side dimension of 500 mm or more; and performing ion exchange treatment in a state in which the glass substrate is tilted to form a compressive stress layer in a surface of the glass substrate.

Abstract: An injection flame burner in which temperature of the generated flame itself can be sustained around the flame. A plurality of double structure injection nozzles each consisting of an outer tube and an inner tube provided coaxially with the outer tube, are arranged such that hydrogen gas is ejected from one of the outer tubes and the inner tubes and oxygen gas is ejected from the other tubes, and the injection port of each injection nozzle is located on the injection surface. Each injection nozzle includes at least one main injection nozzle having an inner tube formed to spread toward the injection surface side, and another sub-injection nozzle arranged around the main injection nozzle, wherein gas is injected from the inner tube of the main injection nozzle under a higher pressure state as compared with gas injected from the sub-injection nozzle.

Abstract: Provided is a method of producing a tempered glass sheet, comprising applying tempering treatment to a glass sheet by increasing the content of SiO2 in terms of mass in a surface region of a glass sheet through application of thermal treatment to the glass sheet to 1.03 or more times that in an interior region positioned at a depth of 1 ?m from a surface of the glass sheet.

Abstract: The present invention is aimed to provide a method for producing a glass substrate with a thickness of not more than 200 ?m, which is satisfied with the quality required for a substrate on which a thin-film electric circuit is formed, and a sheet glass substrate obtained according to this method. The present invention is concerned with a method for producing a glass substrate having a sheet thickness of from 10 to 200 ?m, including a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, wherein an average cooling rate in a temperature range of from the (annealing point+200° C.) to the (annealing point+50° C.) is controlled to the range of from 300 to 2,500° C./min.

Abstract: The invention provides an alkali-free glass substrate small in the variation of the thermal shrinkage and a process for producing the same. An alkali-free glass substrate of the invention has an absolute value of a thermal shrinkage of 50 ppm or more when the alkali-free glass substrate is heated at a rate of 10° C./min from a room temperature, kept at a holding temperature of 450° C. for 10 hr and then cooled at a rate of 10° C./min.

Abstract: The invention provides an alkali-free glass substrate small in the variation of the thermal shrinkage and a process for producing the same. An alkali-free glass substrate of the invention has an absolute value of a thermal shrinkage of 50 ppm or more when the alkali-free glass substrate is heated at a rate of 10° C./min from a room temperature, kept at a holding temperature of 450° C. for 10 hr and then cooled at a rate of 10° C./min.

Abstract: Provided are a process for producing a glass substrate usable for low-temperature p-SiTFT substrates directly in accordance with a down draw method, and the glass substrate obtained by the process. The process for producing a glass substrate includes a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, in which, in the annealing step, an average cooling rate from the annealing point to the (annealing point ?50° C.) is lower than an average cooling rate from the (annealing point +100° C.) to the annealing point.

Abstract: Provided are a process for producing a glass substrate usable for low-temperature p-SiTFT substrates directly in accordance with a down draw method, and the glass substrate obtained by the process. The process for producing a glass substrate includes a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, in which, in the annealing step, an average cooling rate from the annealing point to the (annealing point?50° C.) is lower than an average cooling rate from the (annealing point+100° C.) to the annealing point.

Abstract: An injection flame burner in which temperature of the generated flame itself can be sustained around the flame. A plurality of double structure injection nozzles each consisting of an outer tube and an inner tube provided coaxially with the outer tube, are arranged such that hydrogen gas is ejected from one of the outer tubes and the inner tubes and oxygen gas is ejected from the other tubes, and the injection port of each injection nozzle is located on the injection surface. Each injection nozzle includes at least one main injection nozzle having an inner tube formed to spread toward the injection surface side, another sub-injection nozzle arranged around the main injection nozzle, wherein gas is injected from the inner tube of the main injection nozzle under a higher pressure state as compared with gas injected from the sub-injection nozzle.

Abstract: Provided are a process for producing a glass substrate usable for low-temperature p-SiTFT substrates directly in accordance with a down draw method, and the glass substrate obtained by the process. The process for producing a glass substrate includes a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, in which, in the annealing step, an average cooling rate from the annealing point to the (annealing point ?50° C.) is lower than an average cooling rate from the (annealing point +100° C.) to the annealing point.

Abstract: The invention provides an alkali-free glass substrate small in the variation of the thermal shrinkage and a process for producing the same. An alkali-free glass substrate of the invention has an absolute value of a thermal shrinkage of 50 ppm or more when the alkali-free glass substrate is heated at a rate of 10° C./min from a room temperature, kept at a holding temperature of 450° C. for 10 hr and then cooled at a rate of 10° C./min.

Abstract: A liquid treating apparatus includes a treating tank having at least two walls formed with a liquid inlet and a liquid outlet through each of which a liquid to be treated flows, respectively, and a filtering layer unit including an antibacterial filtering layer, an adsorptive filtering layer and a filtering layer, the filtering layer unit being disposed between the liquid inlet and outlet.

Abstract: An antibacterial rockwool growth medium for hydroponics is used for hydroponic growth of rice, flowers and ornamental plants, fruitage, etc. The medium includes a rockwool base used as a culture medium for hydroponics, and an inorganic antibacterial agent is dispersed substantially uniformly onto an overall surface of the rockwool base or a part of the surface of the rockwool base.

Abstract: A liquid treating apparatus includes a treating tank having at least two walls formed with a liquid inlet and a liquid outlet through each of which a liquid to be treated flows, respectively, and a filtering layer unit including an antibacterial filtering layer, an adsorptive filtering layer and a filtering layer, the filtering layer unit being disposed between the liquid inlet and outlet.

Abstract: An antibacterial rockwool growth medium for hydroponics is used for hydroponic growth of rice, flowers and ornamental plants, fruitage, etc. The medium includes a rockwool base used as a culture medium for hydroponics, and an inorganic antibacterial agent is dispersed substantially uniformly onto an overall surface of the rockwool base or a part of the surface of the rockwool base.