Abstract: A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case. A semiconductor module includes a multi-layer terminal portion in which a first power terminal, a first insulating sheet, and a second power terminal are sequentially stacked. The first power terminal includes a first bonding area electrically connected to the first connection terminal, and the second power terminal includes a second bonding area electrically connected to the second connection terminal. The first insulating sheet includes a terrace portion that extends in a direction from the second bonding area towards the first bonding area in a planar view.

Abstract: To detect whether barrel lids are fixed. A centrifugal barrel polishing machine (A) includes: a plurality of rotary tanks (50) that rotate planetarily; barrel lids (26) that are attachable to and detachable from the rotary tanks (50); and a plurality of clamp shafts (32) that are provided individually in the plurality of rotary tanks (50) so as to be rotatable integrally with the rotary tanks (50). Each of the clamp shafts (32) is displaceable between in a fixing form for fixing the barrel lid (26) to the rotary tank (50) and in a releasing form for releasing the fixation of the barrel lid (26). It is detected by a first detection means (40) whether the rotary tank (50) is positioned in a detection area (D) on a revolution path of the rotary tank (50), and it is detected by a second detection means (43) whether the clamp shaft (32) of the rotary tank (50) positioned in the detection area (D) is displaced to the fixing form.

Abstract: A semiconductor device includes: an insulated circuit substrate; a power semiconductor element mounted on the insulated circuit substrate; a first terminal having a plate-like shape having a first main surface and electrically connected to the power semiconductor element; a second terminal having a second main surface opposed to the first main surface of the first terminal and electrically connected to the power semiconductor element; an insulating sheet interposed between the first main surface and the second main surface; and a conductive film provided on at least one of the first main surface side and the second main surface side of the insulating sheet.

Abstract: A cooling device includes a body having a flow passage for a heating medium that passes through the body, a first header made of a resin that has an inlet and covers a first end, and a second header made of a resin that has an outlet and covers a second end. The body has a front face, a back face, a first side face, and a second side face. The body and the first header are bonded to a first bonding face, a second bonding face, a third bonding face, and a fourth bonding face. The third bonding face is a curved surface that protrudes toward a +Y side. The fourth bonding face is a curved surface that protrudes toward a ?Y side.

Abstract: The present invention is aimed to provide a method for producing a glass substrate with a thickness of not more than 200 ?m, which is satisfied with the quality required for a substrate on which a thin-film electric circuit is formed, and a sheet glass substrate obtained according to this method. The present invention is concerned with a method for producing a glass substrate having a sheet thickness of from 10 to 200 ?m, including a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, wherein an average cooling rate in a temperature range of from the (annealing point +200° C.) to the (annealing point +50° C.) is controlled to the range of from 300 to 2,500° C./min.

Abstract: The present invention is aimed to provide a method for producing a glass substrate with a thickness of not more than 200 ?m, which is satisfied with the quality required for a substrate on which a thin-film electric circuit is formed, and a sheet glass substrate obtained according to this method. The present invention is concerned with a method for producing a glass substrate having a sheet thickness of from 10 to 200 ?m, including a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, wherein an average cooling rate in a temperature range of from the (annealing point+200° C.) to the (annealing point+50° C.) is controlled to the range of from 300 to 2,500° C./min.

Abstract: Provided is a method of producing a tempered glass sheet, comprising applying tempering treatment to a glass sheet by increasing the content of SiO2 in terms of mass in a surface region of a glass sheet through application of thermal treatment to the glass sheet to 1.03 or more times that in an interior region positioned at a depth of 1 ?m from a surface of the glass sheet.

Abstract: A manufacturing method for a tempered glass substrate of the present invention includes: melting glass raw materials to obtain molten glass; forming the molten glass into a sheet shape to obtain a glass substrate having a long side dimension of 1,000 mm or more and a short side dimension of 500 mm or more; and performing ion exchange treatment in a state in which the glass substrate is tilted to form a compressive stress layer in a surface of the glass substrate.

Abstract: An injection flame burner in which temperature of the generated flame itself can be sustained around the flame. A plurality of double structure injection nozzles each consisting of an outer tube and an inner tube provided coaxially with the outer tube, are arranged such that hydrogen gas is ejected from one of the outer tubes and the inner tubes and oxygen gas is ejected from the other tubes, and the injection port of each injection nozzle is located on the injection surface. Each injection nozzle includes at least one main injection nozzle having an inner tube formed to spread toward the injection surface side, and another sub-injection nozzle arranged around the main injection nozzle, wherein gas is injected from the inner tube of the main injection nozzle under a higher pressure state as compared with gas injected from the sub-injection nozzle.

Abstract: Provided is a method of producing a tempered glass sheet, comprising applying tempering treatment to a glass sheet by increasing the content of SiO2 in terms of mass in a surface region of a glass sheet through application of thermal treatment to the glass sheet to 1.03 or more times that in an interior region positioned at a depth of 1 ?m from a surface of the glass sheet.

Abstract: The present invention is aimed to provide a method for producing a glass substrate with a thickness of not more than 200 ?m, which is satisfied with the quality required for a substrate on which a thin-film electric circuit is formed, and a sheet glass substrate obtained according to this method. The present invention is concerned with a method for producing a glass substrate having a sheet thickness of from 10 to 200 ?m, including a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, wherein an average cooling rate in a temperature range of from the (annealing point+200° C.) to the (annealing point+50° C.) is controlled to the range of from 300 to 2,500° C./min.

Abstract: The invention provides an alkali-free glass substrate small in the variation of the thermal shrinkage and a process for producing the same. An alkali-free glass substrate of the invention has an absolute value of a thermal shrinkage of 50 ppm or more when the alkali-free glass substrate is heated at a rate of 10° C./min from a room temperature, kept at a holding temperature of 450° C. for 10 hr and then cooled at a rate of 10° C./min.

Abstract: The invention provides an alkali-free glass substrate small in the variation of the thermal shrinkage and a process for producing the same. An alkali-free glass substrate of the invention has an absolute value of a thermal shrinkage of 50 ppm or more when the alkali-free glass substrate is heated at a rate of 10° C./min from a room temperature, kept at a holding temperature of 450° C. for 10 hr and then cooled at a rate of 10° C./min.

Abstract: Provided are a process for producing a glass substrate usable for low-temperature p-SiTFT substrates directly in accordance with a down draw method, and the glass substrate obtained by the process. The process for producing a glass substrate includes a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, in which, in the annealing step, an average cooling rate from the annealing point to the (annealing point ?50° C.) is lower than an average cooling rate from the (annealing point +100° C.) to the annealing point.

Abstract: Provided are a process for producing a glass substrate usable for low-temperature p-SiTFT substrates directly in accordance with a down draw method, and the glass substrate obtained by the process. The process for producing a glass substrate includes a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, in which, in the annealing step, an average cooling rate from the annealing point to the (annealing point?50° C.) is lower than an average cooling rate from the (annealing point+100° C.) to the annealing point.

Abstract: An injection flame burner in which temperature of the generated flame itself can be sustained around the flame. A plurality of double structure injection nozzles each consisting of an outer tube and an inner tube provided coaxially with the outer tube, are arranged such that hydrogen gas is ejected from one of the outer tubes and the inner tubes and oxygen gas is ejected from the other tubes, and the injection port of each injection nozzle is located on the injection surface. Each injection nozzle includes at least one main injection nozzle having an inner tube formed to spread toward the injection surface side, another sub-injection nozzle arranged around the main injection nozzle, wherein gas is injected from the inner tube of the main injection nozzle under a higher pressure state as compared with gas injected from the sub-injection nozzle.

Abstract: Provided are a process for producing a glass substrate usable for low-temperature p-SiTFT substrates directly in accordance with a down draw method, and the glass substrate obtained by the process. The process for producing a glass substrate includes a forming step of forming a molten glass into a ribbon shape in accordance with a down draw method, an annealing step of annealing the glass ribbon, and a cutting step of cutting the glass ribbon to give a glass substrate, in which, in the annealing step, an average cooling rate from the annealing point to the (annealing point ?50° C.) is lower than an average cooling rate from the (annealing point +100° C.) to the annealing point.

Abstract: The invention provides an alkali-free glass substrate small in the variation of the thermal shrinkage and a process for producing the same. An alkali-free glass substrate of the invention has an absolute value of a thermal shrinkage of 50 ppm or more when the alkali-free glass substrate is heated at a rate of 10° C./min from a room temperature, kept at a holding temperature of 450° C. for 10 hr and then cooled at a rate of 10° C./min.

Abstract: A liquid treating apparatus includes a treating tank having at least two walls formed with a liquid inlet and a liquid outlet through each of which a liquid to be treated flows, respectively, and a filtering layer unit including an antibacterial filtering layer, an adsorptive filtering layer and a filtering layer, the filtering layer unit being disposed between the liquid inlet and outlet.

Abstract: An antibacterial rockwool growth medium for hydroponics is used for hydroponic growth of rice, flowers and ornamental plants, fruitage, etc. The medium includes a rockwool base used as a culture medium for hydroponics, and an inorganic antibacterial agent is dispersed substantially uniformly onto an overall surface of the rockwool base or a part of the surface of the rockwool base.