Patents by Inventor Yoshinari Kurosaki
Yoshinari Kurosaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10699979Abstract: According to one embodiment, an electronic device includes first to third members, first and second elements. The second member is between the first and third members. The first element is between the first and second members. The second element is between the second and third members. The first member includes first nonmagnetic layers and a first magnetic layer. The first magnetic layer is provided between one of the first nonmagnetic layers and an other one of the first nonmagnetic layers. The second member includes second nonmagnetic layers and a second magnetic layer. The second magnetic layer is provided between one of the second nonmagnetic layers and an other one of the second nonmagnetic layers. The third member includes third nonmagnetic layers and a third magnetic layer. The third magnetic layer is provided between one of the third nonmagnetic layers and an other one of the third nonmagnetic layers.Type: GrantFiled: March 12, 2019Date of Patent: June 30, 2020Assignee: Kabushiki Kaisha ToshibaInventors: Akira Kikitsu, Yoshinari Kurosaki, Kenichiro Yamada
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Publication number: 20200066608Abstract: According to one embodiment, an electronic device includes first to third members, first and second elements. The second member is between the first and third members. The first element is between the first and second members. The second element is between the second and third members. The first member includes first nonmagnetic layers and a first magnetic layer. The first magnetic layer is provided between one of the first nonmagnetic layers and an other one of the first nonmagnetic layers. The second member includes second nonmagnetic layers and a second magnetic layer. The second magnetic layer is provided between one of the second nonmagnetic layers and an other one of the second nonmagnetic layers. The third member includes third nonmagnetic layers and a third magnetic layer. The third magnetic layer is provided between one of the third nonmagnetic layers and an other one of the third nonmagnetic layers.Type: ApplicationFiled: March 12, 2019Publication date: February 27, 2020Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Akira KIKITSU, Yoshinari KUROSAKI, Kenichiro YAMADA
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Patent number: 10510680Abstract: A semiconductor device including a semiconductor element and a first member is provided. The first member includes a first magnetic planar region separated from the semiconductor element in a first direction, and a first nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction. At least a portion of the first magnetic planar region includes Fe100-x1-x2?x1Nx2, where ? includes at least one selected from the group consisting of Zr, Hf, Ta, Nb, Ti, Si, and Al, x1 is not less than 0.5 atomic percent and not more than 10 atomic percent, and x2 is not less than 0.5 atomic percent and not more than 8 atomic percent.Type: GrantFiled: February 28, 2018Date of Patent: December 17, 2019Assignee: Kabushiki Kaisha ToshibaInventors: Hitoshi Iwasaki, Akira Kikitsu, Yoshinari Kurosaki
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Patent number: 10468354Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, and a first member. The first member includes a first nonmagnetic planar region separated from the semiconductor element in a first direction, a first magnetic planar region provided between the first nonmagnetic planar region and the semiconductor element in the first direction, and a second nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction. The first magnetic planar region includes a first end portion extending along a second direction crossing the first direction. A first magnetization direction of the first magnetic planar region is tilted with respect to the second direction.Type: GrantFiled: February 28, 2018Date of Patent: November 5, 2019Assignee: Kabushiki Kaisha ToshibaInventors: Akira Kikitsu, Hitoshi Iwasaki, Yoshinari Kurosaki
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Publication number: 20190081007Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, and a first member. The first member includes a first magnetic planar region separated from the semiconductor element in a first direction, and a first nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction. At least a portion of the first magnetic planar region includes Fe1-x1-x2?x1Nx2. ? includes at least one selected from the group consisting of Zr, Hf, Ta, Nb, Ti, Si, and Al. x1 is not less than 0.5 atomic percent and not more than 10 atomic percent. x2 is not less than 0.5 atomic percent and not more than 8 atomic percent.Type: ApplicationFiled: February 28, 2018Publication date: March 14, 2019Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hitoshi IWASAKI, Akira KIKITSU, Yoshinari KUROSAKI
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Publication number: 20180337139Abstract: According to one embodiment, a semiconductor device includes a semiconductor element, and a first member. The first member includes a first nonmagnetic planar region separated from the semiconductor element in a first direction, a first magnetic planar region provided between the first nonmagnetic planar region and the semiconductor element in the first direction, and a second nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction. The first magnetic planar region includes a first end portion extending along a second direction crossing the first direction. A first magnetization direction of the first magnetic planar region is tilted with respect to the second direction.Type: ApplicationFiled: February 28, 2018Publication date: November 22, 2018Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Akira KIKITSU, Hitoshi IWASAKI, Yoshinari KUROSAKI
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Patent number: 8917485Abstract: A magnetoresistive effect element includes a magnetization fixed layer including a first crystal grain, having a magnetization direction which is fixed substantially in one direction, a spacer layer arranged on the magnetization fixed layer and having an insulating layer and a metal conductor penetrating the insulating layer, and a magnetization free layer including a second crystal grain, arranged on the spacer layer to oppose the metal conductor and having a magnetization direction which changes corresponding to an external magnetic field.Type: GrantFiled: October 13, 2006Date of Patent: December 23, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Yoshinari Kurosaki, Hiromi Yuasa, Yoshihiko Fuji, Hitoshi Iwasaki
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Patent number: 8644057Abstract: A magnetic memory includes a first magnetic layer, a second magnetic layer, a third magnetic layer, a first intermediate layer, a second intermediate layer, an insulator film, and an electrode. The third magnetic layer is provided between the first magnetic layer and the second magnetic layer in a first direction being perpendicular to the plane of both the first magnetic layer and the second magnetic layer. The insulator film is provided on the third magnetic layer in a second direction perpendicular to the first direction. The electrode is provided on the insulator film so that the insulator is sandwiched between the third magnetic layer and the electrode in the second direction. In addition, a positive voltage is applied to the electrode and a first current passes from the first magnetic layer to the second magnetic layer, thereby writing information to the second magnetic layer.Type: GrantFiled: September 19, 2011Date of Patent: February 4, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Tsuyoshi Kondo, Hirofumi Morise, Shiho Nakamura, Yoshinari Kurosaki
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Patent number: 8569852Abstract: According to one embodiment, a magnetic oscillation element includes a first electrode/a second magnetic layer/a nonmagnetic spacer layer/a first magnetic layer/a second electrode, stacked in this order. The first magnetic layer has variable magnetization direction. The second magnetic layer has fixed magnetization direction. A thickness of the first magnetic layer in a direction connecting the first and second electrodes is greater than 2 times a spin penetration depth of the first magnetic layer. The thickness of the first magnetic layer is less than a maximum width of the second electrode. The first magnetic layer has edge portion provided outside the first surface when viewed along the direction. A width of the edge portion in a direction perpendicular to a tangent of an edge of the second electrode is not less than an exchange length of the first magnetic layer.Type: GrantFiled: September 21, 2011Date of Patent: October 29, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Hirofumi Morise, Shiho Nakamura, Tsuyoshi Kondo, Yoshinari Kurosaki
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Patent number: 8542466Abstract: A magneto-resistance effect element, including a fixed magnetization layer of which a magnetization is substantially fixed in one direction, a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer, a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof, a thin film layer, and a functional layer.Type: GrantFiled: January 14, 2013Date of Patent: September 24, 2013Assignees: Kabushiki Kaisha Toshiba, TDK CorporationInventors: Yoshihiko Fuji, Hideaki Fukuzawa, Hiromi Yuasa, Kunliang Zhang, Min Li, Michiko Hara, Yoshinari Kurosaki
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Patent number: 8420499Abstract: A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a second layer, the first layer including at least one element selected from a first metal element and a metalloid element, the second layer including a second metal element different from the first metal element; selectively leaving the formative layer only at side faces of the convex portions by performing etching on the formative layer; removing the guide pattern; and forming the concave-convex pattern in the base material by performing etching on the base material, with the remaining formative layer being used as a mask.Type: GrantFiled: November 18, 2011Date of Patent: April 16, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Tomotaka Ariga, Yuichi Ohsawa, Junichi Ito, Yoshinari Kurosaki, Saori Kashiwada, Toshiro Hiraoka, Minoru Amano, Satoshi Yanagi
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Patent number: 8419412Abstract: According to one embodiment, a nano-imprint mold includes plural pairs of first and second protrusions formed on a base layer, each of which is formed along the same straight line. Each protrusion has a top surface and four side surfaces. The first and second protrusions are mirror-symmetrical with each other. A first side surface of the first protrusion and a second side surface of the second protrusion face each other. A first angle between the first side surface or the second side surface and a main surface of the base layer is not less than 85° and not more than 90°. A second angle between a third side surface in the first protrusion or a fourth side surface in the second protrusion and the main surface of the base layer is not less than 70° and not more than 88°. The first angle is larger than the second angle.Type: GrantFiled: March 16, 2012Date of Patent: April 16, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Yuichi Ohsawa, Junichi Ito, Tomotaka Ariga, Yoshinari Kurosaki, Saori Kashiwada
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Patent number: 8379351Abstract: An example magneto-resistance effect element includes a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; and a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer. A thin film layer is located on a side opposite to the spacer layer relative to the free magnetization layer and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.Type: GrantFiled: March 11, 2008Date of Patent: February 19, 2013Assignees: Kabushiki Kaisha Toshiba, TDK CorporationInventors: Yoshihiko Fuji, Hideaki Fukuzawa, Hiromi Yuasa, Kunliang Zhang, Min Li, Michiko Hara, Yoshinari Kurosaki
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Publication number: 20120242438Abstract: According to one embodiment, a magnetic oscillation element includes a first electrode/a second magnetic layer/a nonmagnetic spacer layer/a first magnetic layer/ a second electrode, stacked in this order. The first magnetic layer has variable magnetization direction. The second magnetic layer has fixed magnetization direction. A thickness of the first magnetic layer in a direction connecting the first and second electrodes is greater than 2 times a spin penetration depth of the first magnetic layer. The thickness of the first magnetic layer is less than a maximum width of the second electrode. The first magnetic layer has edge portion provided outside the first surface when viewed along the direction. A width of the edge portion in a direction perpendicular to a tangent of an edge of the second electrode is not less than an exchange length of the first magnetic layer.Type: ApplicationFiled: September 21, 2011Publication date: September 27, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hirofumi Morise, Shiho Nakamura, Tsuyoshi Kondo, Yoshinari Kurosaki
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Publication number: 20120224416Abstract: A magnetic memory includes a first magnetic layer, a second magnetic layer, a third magnetic layer, a first intermediate layer, a second intermediate layer, an insulator film, and an electrode. The third magnetic layer is provided between the first magnetic layer and the second magnetic layer in a first direction being perpendicular to the plane of both the first magnetic layer and the second magnetic layer. The insulator film is provided on the third magnetic layer in a second direction perpendicular to the first direction. The electrode is provided on the insulator film so that the insulator is sandwiched between the third magnetic layer and the electrode in the second direction. In addition, a positive voltage is applied to the electrode and a first current passes from the first magnetic layer to the second magnetic layer, thereby writing information to the second magnetic layer.Type: ApplicationFiled: September 19, 2011Publication date: September 6, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tsuyoshi Kondo, Hirofumi Morise, Shiho Nakamura, Yoshinari Kurosaki
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Publication number: 20120196084Abstract: According to one embodiment, a nano-imprint mold includes plural pairs of first and second protrusions formed on a base layer, each of which is formed along the same straight line. Each protrusion has a top surface and four side surfaces. The first and second protrusions are mirror-symmetrical with each other. A first side surface of the first protrusion and a second side surface of the second protrusion face each other. A first angle between the first side surface or the second side surface and a main surface of the base layer is not less than 85° and not more than 90°. A second angle between a third side surface in the first protrusion or a fourth side surface in the second protrusion and the main surface of the base layer is not less than 70° and not more than 88°. The first angle is larger than the second angle.Type: ApplicationFiled: March 16, 2012Publication date: August 2, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yuichi OHSAWA, Junichi Ito, Tomotaka Ariga, Yoshinari Kurosaki, Saori Kashiwada
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Publication number: 20120115250Abstract: A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a second layer, the first layer including at least one element selected from a first metal element and a metalloid element, the second layer including a second metal element different from the first metal element; selectively leaving the formative layer only at side faces of the convex portions by performing etching on the formative layer; removing the guide pattern; and forming the concave-convex pattern in the base material by performing etching on the base material, with the remaining formative layer being used as a mask.Type: ApplicationFiled: November 18, 2011Publication date: May 10, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Tomotaka Ariga, Yuichi Ohsawa, Junichi Ito, Yoshinari Kurosaki, Saori Kashiwada, Toshiro Hiraoka, Minoru Amano, Satoshi Yanagi
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Publication number: 20080239591Abstract: A magneto-resistance effect element, including: a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer; a thin film layer which is located in a side opposite to the spacer layer relative to the free magnetization layer; and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al which is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.Type: ApplicationFiled: March 11, 2008Publication date: October 2, 2008Applicants: KABUSHIKI KAISHA TOSHIBA, TDK CORPORATIONInventors: Yoshihiko Fuji, Hideaki Fukuzama, Hiromi Yuasa, Kunliang Zhang, Min Li, Michiko Hara, Yoshinari Kurosaki
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Publication number: 20070223150Abstract: A magnetoresistive effect element includes a magnetization fixed layer including a first crystal grain, having a magnetization direction which is fixed substantially in one direction, a spacer layer arranged on the magnetization fixed layer and having an insulating layer and a metal conductor penetrating the insulating layer, and a magnetization free layer including a second crystal grain, arranged on the spacer layer to oppose the metal conductor and having a magnetization direction which changes corresponding to an external magnetic field.Type: ApplicationFiled: October 13, 2006Publication date: September 27, 2007Applicant: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Yoshinari Kurosaki, Hiromi Yuasa, Yoshihiko Fuji, Hitoshi Iwasaki