Patents by Inventor Yoshinari Satoh

Yoshinari Satoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5149362
    Abstract: An Ag-Cu-WC contact forming material for a vacuum interrupter comprising a highly conductive component comprising Ag and Cu and an arc-proof component comprising WC wherein the content of the highly conductive component is such that the total amount of Ag and Cu(Ag+Cu) is from 25% to 65% by weight and the percentage of Ag based on the total amount of Ag and Cu[Ag/(Ag+Cu)] is from 40% to 80% by weight; wherein the content of the arc-proof component is from 35% to 75% by weight; wherein the structure of the highly conductive component comprises a matrix and a discontinuous phase, the discontinuous phase having a thickness or width of no more than 5 micrometers and wherein said arc-proof component comprises a discontinuous grain having a grain size of no more than 1 micrometer.
    Type: Grant
    Filed: July 28, 1989
    Date of Patent: September 22, 1992
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsutomu Okutomi, Atsushi Yamamoto, Seishi Chiba, Tsuneyo Seki, Mikio Okawa, Mitsutaka Honma, Kiyofumi Otobe, Yoshinari Satoh, Tadaaki Sekiguchi
  • Patent number: 5045281
    Abstract: A contact forming material for a vacuum interrupter comprising: from 25% to 65% by weight of a highly conductive component comprising Ag and Cu, and from 35% to 75% by weight of an arc-proof component selected from the group consisting of Ti, V, Cr, Zr, Mo, W and their carbides and borides, and mixtures thereof wherein the highly conductive component of the contact forming material comprises (i) a first highly conductive component region composed of a first discontinuous phase having a thickness or width of no more than 5 micrometers and a first matrix surrounding the first discontinuous phase, and (ii) a second highly conductive component region composed of a second discontinuous phase having a thickness or width of at least 5 micrometers and a second matrix surrounding the second discontinuous phase, wherein the first discontinuous phase in the first highly conductive component region is finely and uniformly dispersed in the first matrix at intervals of no more than 5 micrometers, and wherein the amount of
    Type: Grant
    Filed: February 27, 1990
    Date of Patent: September 3, 1991
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsutomu Okutomi, Mikio Okawa, Atsushi Yamamoto, Tsuneyo Seki, Yoshinari Satoh, Mitsutaka Honma, Seishi Chiba, Tadaaki Sekiguchi