Abstract: Provided is an n-channel BiMOS semiconductor device having a trench gate structure, the n-channel BiMOS semiconductor device including: an n+ drain layer; a parallel pn layer including n? drift and p pillar layers joined alternately; a composite layer including a p base layer and an n+ source layer, the n+ drain layer, the parallel pn layer, and the composite layer being provided in order; a high-resistance layer provided between a portion of the p base layer above the p pillar layer and the n+ source layer; and a high-resistance layer provided between the p pillar layer and the p base layer, the p pillar layer having an impurity concentration lower than that of the n? drift layer.

Abstract: A power conversion device includes a power converter including at least a first converter for converting battery power output by a battery into first output power of a first voltage waveform based on an input or set output waveform profile and outputting the first output power from a first terminal pair and a second converter for converting the battery power into second output power of a second voltage waveform of a rectangular shape and outputting the second output power from a second terminal pair and configured to supply a load with third output power of an alternating current (AC) control waveform generated by adding the first output power to the second output power, and a controller configured to output a voltage command value for outputting the first output power as the output waveform profile to the first converter to the power converter on the basis of the input request command value of output power for the load and the voltage value of the third output power output by the power converter.

Abstract: A power supply system 1 includes: a DC power supply 30; a variable voltage power supply 7 serving as an isolated bidirectional DC/DC converter that outputs power of a variable voltage E2 from a pair of secondary-side input/output terminals 72p and 72n; a positive electrode power line 21 and a negative electrode power line 22 that are connected to both electrodes of the DC power supply 30; a switching circuit 5 including a plurality of arm switching elements 51, 52, 53, and 54 that connect the power lines 21 and 22 and a load 4; a backflow prevention switching element 34 that is provided on the positive electrode power line 21 between the pair of secondary-side input/output terminals 72p and 72n; a power supply driver 6 that operates the variable voltage power supply 7 and the backflow prevention switching element 34; and a switching circuit driver 8.

Abstract: A power supply system 1 includes: a variable voltage power supply 7 that outputs power of a variable voltage E1 from a pair of secondary-side input/output terminals 72p and 72n; a first power line 21 and a second power line 22 that connect the pair of secondary-side input/output terminals 72p and 72n and a load 4; a first switch unit 31 that is provided on the first power line 21; a third power line 23 that connects both ends of the first switch unit 31; and a bypass line 25 that connects the pair of secondary-side input/output terminals 72p and 72n, a first DC power supply 33 is provided on the third power line 23 to output DC power, and a bypass diode 33a is provided on the bypass line 25 to allow an output current of the first DC power supply 38.

Abstract: A power conversion device includes a first converter configured to convert at least first battery power output by a first battery into first output power of a first voltage waveform based on an output waveform profile that has been input or set and output the first output power and a first generator configured to generate and output second output power based on the first battery power. Third output power of an alternating current (AC) control waveform generated by adding the first output power to the second output power is supplied to a load.

Abstract: Provided is a converter including: a primary-side switching unit to be connected to a battery; a secondary-side switching unit to be connected to a motor; a transformer provided between the primary-side switching unit and the secondary-side switching unit; and a controller configured to control at least the secondary-side switching unit so as to output a voltage that depends on an output waveform profile of a desired waveform to the motor.

Abstract: A power supply system 1 includes: a variable voltage power supply 7 that outputs power of a variable voltage from a pair of secondary-side input/output terminals 72p and 72n; and power lines 21 and 22 that connect the pair of secondary-side input/output terminals 72p and 72n and a load 4. The first power line 21 is provided with a first switch unit 31 and a third power line 23 that connects both ends of the first switch unit 31, and the third power line 23 is provided with a third switch unit 33, a DC power supply 30, and a second switch unit 32 in series. The fourth power line 24 connects the third power line 23 and the second power line 22. The fourth power line 24 is provided with a fourth diode 34a that allows an output current of the DC power supply 30.

Abstract: A first electric motor is coupled to a first rotating element of a first differential mechanism, and a second electric motor is coupled to a first rotating element of a second differential mechanism. A first rotating element coupling body, formed by coupling a second rotating element of the first differential mechanism and a second rotating element of the second differential mechanism with each other, is coupled to an output shaft. a second rotating element coupling body, formed by coupling a third rotating element of the first differential mechanism and a third rotating element of the second differential mechanism with each other, is coupled to a first connection/disconnection portion. A first rotating element of the first differential mechanism, the first rotating element coupling body, the second rotating element coupling body, a first rotating element of the second differential mechanism are aligned in this order on a collinear diagram.

Abstract: An n-channel BiMOS semiconductor device having a trench gate structure includes an n+ drain layer; a parallel pn layer including n? drift and p pillar layers joined alternately; and a composite layer including a p base layer and an n+ source layer, in which the n+ drain layer, the parallel pn layer, and the composite layer are provided in order.

Abstract: Provided is an n-channel BiMOS semiconductor device having a trench gate structure, the n-channel BiMOS semiconductor device including: an n+ drain layer; a parallel pn layer including n? drift and p pillar layers joined alternately; a composite layer including a p base layer and an n+ source layer, the n+ drain layer, the parallel pn layer, and the composite layer being provided in order; a high-resistance layer provided between a portion of the p base layer above the p pillar layer and the n+ source layer; and a high-resistance layer provided between the p pillar layer and the p base layer, the p pillar layer having an impurity concentration lower than that of the n? drift layer.

Abstract: A first electric motor is coupled to a first rotating element of a first differential mechanism, and a second electric motor is coupled to a first rotating element of a second differential mechanism. A first rotating element coupling body, formed by coupling a second rotating element of the first differential mechanism and a second rotating element of the second differential mechanism with each other, is coupled to an output shaft. a second rotating element coupling body, formed by coupling a third rotating element of the first differential mechanism and a third rotating element of the second differential mechanism with each other, is coupled to a first connection/disconnection portion. A first rotating element of the first differential mechanism, the first rotating element coupling body, the second rotating element coupling body, a first rotating element of the second differential mechanism are aligned in this order on a collinear diagram.

Abstract: A power transmission apparatus has a power distribution mechanism which is connected to an engine and a first motor-generator an in which at least three rotation elements enable to rotate in differential motions to one another, a power combining mechanism which is connected to the power distribution mechanism, a second motor-generator and an output shaft and in which four rotation elements enable to rotate in differential motions to one another, a brake mechanism which enables to selectively fix a rotation element of the power combining mechanism and a brake mechanism which enables to selectively fix a rotation element of the power combining mechanism which is connected to the engine.

Abstract: Provided is an electric power system capable of rapidly slowing an electric motor and quickly discharging a capacitor when an abnormality occurs. If an abnormality detection device detects an abnormality, a control device of an electric power system performs a switching control that alternately switches between an upper arm three-phase short-circuit control that sets all upper arms to a conductive state and sets all lower arms to a non-conductive state, and a lower arm three-phase short-circuit control that sets all upper arms to a non-conductive state and sets all lower arms to a conductive state. When switching between the two short-circuit controls, a conduction overlap period in which the conductive state of said upper arms and the conductive state of said lower arms overlap may be generated.

Abstract: Provided is an electric power system capable of rapidly slowing an electric motor and quickly discharging a capacitor when an abnormality occurs. If an abnormality detection device detects an abnormality, a control device of an electric power system performs a switching control that alternately switches between an upper arm three-phase short-circuit control that sets all upper arms to a conductive state and sets all lower arms to a non-conductive state, and a lower arm three-phase short-circuit control that sets all upper arms to a non-conductive state and sets all lower arms to a conductive state. When switching between the two short-circuit controls, a conduction overlap period in which the conductive state of said upper arms and the conductive state of said lower arms overlap may be generated.

Abstract: A power transmission apparatus has a power distribution mechanism which is connected to an engine and a first motor-generator an in which at least three rotation elements enable to rotate in differential motions to one another, a power combining mechanism which is connected to the power distribution mechanism, a second motor-generator and an output shaft and in which four rotation elements enable to rotate in differential motions to one another, a brake mechanism which enables to selectively fix a rotation element of the power combining mechanism and a brake mechanism which enables to selectively fix a rotation element of the power combining mechanism which is connected to the engine.

Abstract: A turn-off feedback unit (23OFF) of a semiconductor device driving unit generates a feedback voltage as part of a voltage of a drive signal for establishing electrical continuity or disconnection in a bus according to a temporal variation of a collector current of a first semiconductor device (11U) when the first semiconductor device (11U) is turned off from on. A turn-on feedback unit (23ON) generates the feedback voltage according to a commutation current flowing through a free wheeling diode (12D) connected to a second semiconductor device (11D) when the first semiconductor device (11U) is turned on from off.

Abstract: A turn-off feedback unit (23OFF) of a semiconductor device driving unit generates a feedback voltage as part of a voltage of a drive signal for establishing electrical continuity or disconnection in a bus according to a temporal variation of a collector current of a first semiconductor device (11U) when the first semiconductor device (11U) is turned off from on. A turn-on feedback unit (23ON) generates the feedback voltage according to a commutation current flowing through a free wheeling diode (12D) connected to a second semiconductor device (11D) when the first semiconductor device (11U) is turned on from off.

Abstract: A semiconductor device (11) having a switching function of being turned on or off according to a voltage (Vge) of a driving signal supplied to a gate thereof is driven by generating a feedback voltage (VFE) based on a time change (dI/dt) of a collector current (Ic) of the semiconductor device (11) and applying the feedback voltage (VFE) as part of the voltage (Vge) of the driving signal when the semiconductor device (11) is switched from on to off.

Abstract: A semiconductor device (11) having a switching function of being turned on or off according to a voltage (Vge) of a driving signal supplied to a gate thereof is driven by generating a feedback voltage (VFE) based on a time change (dI/dt) of a collector current (Ic) of the semiconductor device (11) and applying the feedback voltage (VFE) as part of the voltage (Vge) of the driving signal when the semiconductor device (11) is switched from on to off.

Abstract: A turn-off feedback unit (23OFF) of a semiconductor device driving unit generates a feedback voltage as part of a voltage of a drive signal for establishing electrical continuity or disconnection in a bus according to a temporal variation of a collector current of a first semiconductor device (11U) when the first semiconductor device (11U) is turned off from on. A turn-on feedback unit (23ON) generates the feedback voltage according to a commutation current flowing through a free wheeling diode (12D) connected to a second semiconductor device (11D) when the first semiconductor device (11U) is turned on from off.