Patents by Inventor Yoshino Tomihari

Yoshino Tomihari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field emission cold cathode with buried insulator layer
    Patent number: 5965972
    Abstract: A field emission cold cathode comprises an n-type silicon substrate (1), a plurality of sharp-pointed emitter cones (2) formed on the n-type silicon substrate (1), and a buried insulator layer (3) formed in the n-type silicon substrate (1) to surround each of underlying regions right under each emitter cone (2). An insulator layer (4) is formed on the n-type silicon substrate (1) and has a plurality of insulator holes so as to surround each emitter cone (2). A gate electrode (5) is formed on the insulator layer (4) and has a plurality of gate holes for extracting electrons from the emitter cones (2).
    Type: Grant
    Filed: May 28, 1997
    Date of Patent: October 12, 1999
    Assignee: NEC Corporation
    Inventors: Naruaki Takada, Yoshino Tomihari, Tadahiro Matsuzaki