Abstract: The winding drum of the cable-winding device is kept air-tight by an air-tight container. A lower elastic sealing member 1a is interposed between the air-tight container and the rotation table. The air-tight container, the lower elastic sealing member 1a, and the chamber are communicated with one another. The air-tight container and the chamber are filled with inert gases at less than atmospheric pressure. The rotation table, the weight sensors, the drive motor, the gear are disposed in the atmosphere. An arm is vertically installed on the rotation table. An upper elastic sealing member 1b is interposed between the end portion of the arm and the air-tight container. The upper elastic sealing member is communicated the interior of the air-tight container through a through hole. The arm support the top portion of the upper elastic sealing member.

Abstract: The objects of the present invention are to remove the dust in a closed container, to keep the pressure in the closed container within a predetermined range, and to shorten the maintenance time of a vacuum pump system.The present invention provides a centrifugal dust collector 2 on main pipes which connects a furnace body 1, a mechanical press 9 and a dry pump 10, and a metal mesh dust collector 15 on a bifurcated pipe in a single-crystal semiconductor pulling apparatus. When the vacuum pump process begins, the metal mesh dust collector 15 collects amorphous silicon generated in the furnace 1. As the pressure in the furnace is reduced, the centrifugal dust collector 2 collects the dust particles instead. Since the gas flow rate increases as the vacuum state become higher, the critical diameter of collectable particles decreases, thereby improving the dust collection efficiency.

Abstract: An apparatus for holding a single-crystal semiconductor ingot which is stored in a pulling chamber of a single-crystal semiconductor pulling apparatus is disclosed. The apparatus includes a spindle; a base installed on the spindle and movable along the spindle; a pair of arms for holding the single-crystal semiconductor ingot; means for driving the arms; a pair of sensors for detecting the distance between the ingot and the arms; and a controller for driving the arms to the ingot according to the sensors; when each of the arms is detected to have a predetermined distance from the ingot, the controller stopping the movement of the arm; when both the arms have the predetermined distance to the ingot, the controller driving simultaneously both the arms to the ingot surface, thereby holding the ingot.

Abstract: A single-crystal semiconductor pulling apparatus improves the crystallization rate by reinforcing the physical strength of the Dash's neck portion, and eliminate the process time difference depending on the experiences of operators. The single-crystal semiconductor pulling apparatus, which is according to the Czochralski method, includes controller for automatically controlling the pulling rate of a seed crystal and a melt temperature. The controller modifies a target value of a diameter of a crystal grown from the seed which is immersed from a first value to a second value. The first value is for ensuring dislocation-free state, while the second value is for retaining physical strength of the crystal. Furthermore, the controller is provided with the function of judging the crystal to be in dislocation-free state.

Abstract: The present invention provides a method and an apparatus for fabricating a single-crystal semiconductor by means of the CZ method in which the oxygen concentration in the single-crystal semiconductor is controlled within an acceptable range. The apparatus comprises a regulating cylinder concentrically covering the single-crystal semiconductor which is pulled from a melt in a crucible; a main chamber for isolating the growing single-crystal semiconductor from external atmosphere; and a falling gas introducing means on top of the main chamber for introducing an inert gas into the main chamber. The apparatus is characterized in that a whirling gas introducing means on a circumferential portion of the main chamber introduces an whirling inert gas into the main chamber in a tangential direction to the side walls of the main chamber and the regulating cylinder.

Abstract: An apparatus for fabricating a semiconductor single crystal, which make it possible to reduce the oxygen concentration of a pulling single crystal, to steadily dissolve the polysilicon material received in a crucible, and to minimize the cost and installation space, is provided.The hollow cylindrical resistance heater of the apparatus, which co-axially surrounds a crucible, is provided with a ring-shaped slit excluding the location where at least two electrodes are formed, in a direction substantially perpendicular to the axial direction so as to divide the heater into an upper heating portion and a lower heating portion, and is provided with a plurality of vertical slits formed on the upper heating portion and the lower heating portion respectively, in a direction substantially parallel to the axial direction, wherein each vertical slit formed on the upper heating portion does not align with each vertical slit formed on the lower heating portion.

Abstract: A semiconductor single crystal growing apparatus is vertically and telescopically provided with a seed holder. The seed holder comprises a seed-holding member for holding a seed and a suspending bolt for bolting the seed-holding member. The front end of the seed coincides with a datum point when the seed holder is moved to a top dead point.

Abstract: A method of producing high-purity transparent vitreous silica body through flame hydrolysis of high-purity silane type gas, comprising forming the width in the sectional direction of the reduction area of said flame so as to be about more than 1.5 times as against the diameter of the formed vitreous silica body, and the length of the reduction area of said flame so as to be about more than 2.5 times as against said diameter, while retaining the head portion of the formed vitreous silica body within the reduction area of said flame to synthesize the high-purity transparent vitreous silica body.

Abstract: A method of producing high-purity transparent vitreous silica by supplying to a burner a high-purity silane type gas, and an inert gas, hydrogen gas and oxygen gas to effect the flame hydrolysis, comprising growing highly pure transparent vitreous silica at a controlled atmosphere of said flame that may increase the oxygen defect concentration of the vitreous silica, and thereafter heat-treating said formed body.