Abstract: A manufacturing method for a semiconductor device according to the present disclosure includes preparing a laminate body including a plurality of semiconductor layers, and a first support body including an upper surface, a side surface, and a recessed portion including an opening adjacent to the upper surface and the side surface, bonding and disposing the laminate body to the upper surface of the first support body, forming a first end surface at the laminate body, and forming a first dielectric layer on the first end surface.

Abstract: A light-emitting body includes a base semiconductor part including a nitride semiconductor, a compound semiconductor part including a nitride semiconductor and positioned above the base semiconductor part, and a first electrode and a second electrode. The base semiconductor part includes first part and second part having a density of threading dislocation extending in a thickness direction lower than that of the first part, at least part of the first electrode and at least part of the second electrode are positioned on the compound semiconductor part, and at least part of the first electrode is positioned above the second part.

Abstract: A substrate includes an upper surface and wiring lines disposed on the upper surface. The first optical semiconductor element is disposed on the upper surface of the substrate, and the second optical semiconductor element is adjacent to the first optical semiconductor element. The first optical semiconductor element includes a first electrode and a second electrode each disposed at a lower end portion of the first optical semiconductor element, and each of the first electrode and the second electrode is connected to a corresponding one of the wiring lines.

Abstract: Provided are an illumination device that is capable of making linearly clear a bright-dark contrast of a boundary between an illumination region and a dark portion in at least one of a horizontal direction and a vertical direction, and a vehicular headlight. The illumination device (1A) includes an emitting section (15) having a phosphor that receives excitation light emitted from a laser element (2c) and emits light; and a movable mirror (20A) that continuously changes a position of a spot (15a) of the excitation light on the emitting section (15) in accordance with a predetermined rule. The spot (15a) has an edge portion in which at least a pair of two opposing sides are linear.

Abstract: In an optical module (first module (1)), a plurality of semiconductor laser elements (a first semiconductor laser element (21) through a third semiconductor laser element (23)) that output light of wavelengths which are different from each other from light emitting points are mounted on a base member (10). The base member (10) has a reference surface (11) serving as a reference in a height direction (Z) and a mounting surface (a first mounting surface (12a) and a second mounting surface (12b)) on which the semiconductor laser elements are mounted. At least some of the plurality of semiconductor laser elements are different from each other in a height (a first light emission height (TL1) through a third light emission height (TL3)) from a surface in contact with the mounting surface to the light emitting points, and are substantially equal in a height (reference height (HL)) from the reference surface to the light emitting points.

Abstract: A light emission body capable of simultaneously improving spot feature and color unevenness of illumination light is provided. A light emission body (6) according to one embodiment of the present invention includes a fluorescent substance layer (61) having a light irradiation surface (61a) irradiated with laser light (L1) and a light emitting surface (61b) emitting the laser light (L1) and fluorescence (L2), a light absorption layer (62) that blocks the laser light (L1) and the fluorescence (L2) emitted from the light emitting surface (61b), and a scattering layer (63) that scatters the laser light (L1) and the fluorescence (L2) which are not blocked by the light absorption layer (62).

Abstract: A wavelength conversion member that includes a single crystal phosphor and has a high yield rate is provided. A light emitting unit (1) is a wavelength conversion member that converts a wavelength of a laser light output from a laser light source and includes a phosphor layer (1a) formed of a single crystal phosphor. A plane orientation of a principal plane (1b), which has an area larger than those of divided planes, of the phosphor layer is {111}, and a plane orientation of some divided planes out of the plurality of divided planes is {1-10}.

Abstract: A wavelength conversion member that includes a single crystal phosphor and has a high yield rate is provided. A light emitting unit (1) is a wavelength conversion member that converts a wavelength of a laser light output from a laser light source and includes a phosphor layer (1a) formed of a single crystal phosphor. A plane orientation of a principal plane (1b), which has an area larger than those of divided planes, of the phosphor layer is {111}, and a plane orientation of some divided planes out of the plurality of divided planes is {1-10}.

Abstract: Efficiency of extracting fluorescent light in a desired direction is improved. A light emitting portion (12) of a light emitting device (10) includes a gap present inside thereof, the gap having a width that is one-tenth or less of the wavelength of laser light. An excitation-light transmitting film (13) that transmits laser light and that reflects fluorescent light is provided on a side where a light reception surface (12a) that receives laser light is present. A fluorescent-light transmitting film (14) that reflects laser light and that transmits fluorescent light is provided on a side where an emission surface (12b) that emits fluorescent light is present.

Abstract: A light emission body capable of simultaneously improving spot feature and color unevenness of illumination light is provided. A light emission body (6) according to one embodiment of the present invention includes a fluorescent substance layer (61) having a light irradiation surface (61a) irradiated with laser light (L1) and a light emitting surface (61b) emitting the laser light (L1) and fluorescence (L2), a light absorption layer (62) that blocks the laser light (L1) and the fluorescence (L2) emitted from the light emitting surface (61b), and a scattering layer (63) that scatters the laser light (L1) and the fluorescence (L2) which are not blocked by the light absorption layer (62).

Abstract: When a phosphor layer formed of a small-gap phosphor plate is used, color irregularity of illumination light emitted from a light-emitting device is reduced. The light-emitting device (100) which emits laser light (L1) as part of illumination light includes a semiconductor laser (10a to 10c) which emits the laser light (L1), which is visible light, a phosphor layer (1a) formed of a small-gap phosphor plate which emits a fluorescence (L2) upon reception of the laser light (L1) emitted from the semiconductor laser (10a to 10c), and an excitation light distribution control unit (1b) which controls light distribution of the laser light (L1) and guides the laser light (L1) to inside of the phosphor layer (1a). The small-gap phosphor plate is a phosphor plate in which a gap that is present inside has a width equal to or longer than 0 nm and equal to or shorter than one tenths of a wavelength of the laser light (L1).

Abstract: A light-emitting device includes a plurality of light source units each having a laser light source that outputs excitation light, and a phosphor unit that receives the excitation light and emits fluorescence. At least two light source units of the plurality of light source units are configured so that excitation light beams overlap each other on a light irradiation surface of the phosphor unit when the light irradiation surface is irradiated with the excitation light beams and so that longitudinal directions of long shapes of projection light beams on the light irradiation surface by the excitation light beams projected onto the light irradiation surface are parallel or substantially parallel to each other.

Abstract: A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.

Abstract: A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.

Abstract: A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.

Abstract: A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.

Abstract: An optical apparatus of an aspect of the present invention includes: a plurality of semiconductor laser elements each of which emits laser light; an optical fiber which has a core which guides the laser light; and an imaging section which causes a plurality of beams of laser light to form an image on an incidence end surface of the single core, the incidence end surface having an outer shape which has a first side defining a width of the core and a second side defining a height of the core, a plurality of spots which are formed on the incidence end surface having respective long axes which are aligned with each other, the long axes of the plurality of spots being aligned with the first side or the second side.

Abstract: There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.

Abstract: A nitride semiconductor laser chip is provided that offers sufficient reliability even at high output. The nitride semiconductor laser chip has a nitride semiconductor layer formed on a substrate, a resonator facet formed on the nitride semiconductor layer, and a coating film formed on the resonator facet and containing Ar. The coating film has, in a region contiguous with the resonator facet and in the vicinity thereof, a low-Ar region with a low Ar content and, on the side of this low-Ar region opposite from the resonator facet, a high-Ar region with a higher Ar content than the low-Ar region.

Abstract: There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride film deposited adjacent to the light emitting portion and an oxide film deposited on the oxynitride film. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride film deposited adjacent to the facet of the cavity and an oxide film deposited on the oxynitride film.