Abstract: A water purifier-use cartridge includes a container main body having a filtering medium container and a lid portion bonded to the opening end side of the filtering medium container and a filtering medium in the filtering medium container. The lid portion has a water intake port and a water discharge port, a first water passage communicating with the water intake port is formed on an outer side of the filtering medium in the filtering medium container. The filtering medium is molded activated carbon having a second water passage and a hollow fiber membrane is configured to be in touch with the second water passage. The molded activated carbon and the hollow fiber membrane are disposed along a central axis direction of the filtering medium container, the water purifier-use cartridge is configured such that water flows from the first water passage to the second water passage through the molded activated carbon.

Abstract: A fixed plate (15) is provided in a fixed metal frame (14). An opening and closing metal frame (17) having a movable plate (21) is attached to the fixed metal frame (14) so as to be openable and closable. The fixed metal frame (14) is provided with a pressurizing mechanism (23) applying a pressure in a closing direction generated by a spring (25) to the opening and closing metal frame (17) in a closed state. An actuating member (29) is movably provided at a position facing the pressurizing mechanism (23). Cam surfaces (30d, 32a) are provided between the actuating member (29) and the pressurizing mechanism (23). The spring (25) is deformed against an urging force thereof on the basis of operations of the cam surfaces (30d, 32a) in accordance with a movement of the actuating member (29), and the pressure applied to the opening and closing metal frame (17) is strengthened.

Abstract: A probe (6) is brought into contact with a plasma produced by ionizing Ar gas, a saturation current (Ies2) at which current flowing through the probe is saturated when the potential of the probe is changed in a potential region where the potential of the probe is higher than a ground potential, and a saturation current (Iis2) at which current flowing through the probe is saturated when the potential of the probe is changed in a potential region where the potential of the probe is lower than the ground potential. Similarly, saturation currents (Ies2, Iis2) are measured by bringing the probe (6) into contact with a plasma produced by ionizing a mixed gas containing Ar gas and a process gas, such as C4F8 gas, and changing the potential of the probe (6). The negative ion density of the plasma produced by ionizing C4F8 gas is determined by using saturation current ratios (Iis1/Iis2, Ies1/Ies2).

Abstract: The present invention aims to decrease reflected waves in a vacuum chamber to suppress standing waves, thereby easily controlling a plasma density so that uniform treatment can be performed. An electromagnetic wave absorber 6 composed of a resistor such as carbon, a dielectric having a large dielectric loss, such as water, or a magnetic material such as ferrite-based ceramic, or a combination of these, is provided on an inner wall surface of a first vacuum chamber 21. Microwaves introduced from a waveguide 25 into the first vacuum chamber 21 via a transmissive window 23 are absorbed to the electromagnetic wave absorber 6 to suppress reflected waves, whereby a plasma density distribution with a nearly planned pattern is easily formed at an ECR point.

Abstract: An electron density at an ECR point, which is spaced from a substrate to be treated and which faces the substrate, is set to be higher than or equal to 0.46 nc (nc: an upper limit side cut-off density of an X wave) and lower than nc. Thus, a high chevron distribution of electron density is formed in end portions of a magnetic field forming region, and a distribution of electron density having a lower peak value than those in the end portions is formed in a central portion of the magnetic field forming region. In this case, the periphery of a magnetic field crosses the inner wall of a vacuum chamber once between the ECR point and the substrate, and a space of one fourth or more of the wavelength of the X wave is formed between the periphery of the magnetic field and the inner wall of the vacuum chamber as the magnetic field runs downstream. Thus, it is possible to achieve an inplane uniform treatment when carrying out a treatment, such as a thin film deposition or etching, with ECR plasmas for a wafer.

Abstract: A microwave plasma processing apparatus includes a microwave waveguide connected to a microwave power source, a mode converting wave guide and a plasma chamber.