Abstract: A process for crystal growth of III-V group compound semiconductor, which comprises pyrolyzing, in a gas phase, a material consisting of an organometallic compound and/or a hydride in the presence of an organic compound containing an oxygen atom-carbon atom direct bond, used as a dopant to grow a III-V group compound semiconductor crystal layer containing at least aluminum, of high electric resistance. Said process can grow a compound semiconductor layer of high electric resistance by the use of a dopant which enables the independent controls of oxygen concentration and aluminum concentration and which has a small effect of oxygen remaining.

Abstract: A zinc selenide or zinc selenide-sulphide epitaxial crystal is grown at a growth temperature of about 180.degree.-320.degree. C. by organometallic chemical vapor deposition by using zinc alkyl and hydrogen selenide and/or hydrogen sulphide. An as-grown crystal presented an n conductivity type low resistivity and exhibited a narrow near-band gap emission peak. Besides a crystal of the same material as the epitaxial layer, crystals of group III-V, group IV, and so forth having the same or similar crystal structure as the epitaxial layer can be used as an underlayer for the growth.

Abstract: Process for the preparation of a resin composition which comprises reacting a polybutadiene having a number average molecular weight of 150 to 10,000 and 1,4-structure of at least 80% by weight with a phenol in the presence of an acid catalyst to obtain a composition which consists of a polybutadiene-phenol adduct and unreacted phenol, in said polybutadiene-phenol adduct, one molecule of phenol per 3 to 8 butadiene units being added to the polybutadiene, and reacting the polybutadiene-phenol adduct composition with a formaldehyde in the presence of a basic catalyst. Said resin composition thus prepared is useful for the preparation of a laminated sheet having excellent curing characteristics, particularly excellent electrical characteristics, punchability and flexibility.

Abstract: A sulfonated product of butadiene or isoprene oligomer of the formula: ##STR1## wherein one of R.sub.1 and R.sub.1 ' is hydrogen or methyl and another one is hydrogen; R.sub.2 ' is hydrogen or methyl; one of X.sub.1 and X.sub.2 is --SO.sub.3 M and another one is hydrogen; a and b are each an integer satisfying the conditions; n = a + b, 2 < n < 40 and 0 < b; M is hydrogen, Na, K, Li or --NR.sub.3 R.sub.4 R.sub.5 R.sub.6 ; and R.sub.3, R.sub.4, R.sub.5 and R.sub.6 are each hydrogen or an alkyl having 1 to 6 carbon atoms, which has specific properties, particularly excellent hard water resistance, and is useful for various utilities, for instance, as a surfactant, emulsifier, or the like, and a process for the production of the sulfonated product.