Abstract: In a semiconductor device comprising at least one bipolar transistor and a VIP isolating layer which are formed in both an epitaxial layer and a semiconductor substrate, an impurity-introduced region having the same conductivity type as that of the semiconductor substrate is formed so as to surround the V-groove. A buried layer of the bipolar transistor comes into contact with the VIP isolating layer to divide the impurity-introduced region into two parts, one of which is combined with a base region and the other one of which serves as a channel stopper.

Abstract: A semiconductor device comprising at least one bipolar transistor and at least one MIS FET integrated in a single semiconductor substrate, has an electrode for each region of the bipolar transistor and the MIS FET. Each electrode has the same conductivity type as the corresponding region and is connected to ohmic contact with the surface of the corresponding region.

Abstract: In a case where a semiconductor device is produced comprising at least one semiconductor element, an isolation region surrounding the semiconductor element and a thick silicon oxide layer lying on and around the semiconductor element, the thick oxide layer is formed by thermal-oxidizing the epitaxial layer having a buried layer and, at the same time, the isolation region is formed in the epitaxial layer by heating for thermal oxidation. Prior to a step of introducing impurities into the epitaxial layer, the epitaxial layer is covered by an anti-oxidation masking layer, an insulating layer and a photo resist layer. Subsequent to the step of introducing impurities, the anti-oxidation masking layer is shaped into a pattern mask for the thermal-oxidation treatment.

Abstract: In a case where a semiconductor device is produced comprising at least one semiconductor element, an isolation region surrounding the semiconductor element and a thick silicon oxide layer lying on and around the semiconductor element, the thick oxide layer is formed by thermally-oxidizing the epitaxial layer having a buried layer and, at the same time, the isolation region is formed in the epitaxial layer by heating for thermal oxidation. Prior to a step of introducing impurities into the epitaxial layer, a patterned thin silicon oxide layer is formed. This thin silicon oxide layer is varied into the thick oxide layer by the thermal-oxidation treatment.

Abstract: An improved means and method for isolating semiconductor devices on a semiconductor substrate, comprising a shallow region formed between the semiconductor substrate and an epitaxial layer of each device, and between a buried layer of each device and an isolation region separating adjacent devices. The shallow region has conductivity type opposite to that of the semiconductor substrate and higher impurity concentration than that of the epitaxial layer.

Abstract: In a case where a semiconductor device is produced comprising at least one semiconductor element, an isolation region surrounding the semiconductor element and a thick silicon oxide layer lying on and around the semiconductor element, the thick oxide layer is formed by thermally-oxidizing the epitaxial layer having a buried layer and, at the same time, the isolation region is formed in the epitaxial layer by heating for thermal oxidation. Prior to a step of introducing impurities into the epitaxial layer, a patterned thin silicon oxide layer is formed. This thin silicon oxide layer is varied into the thick oxide layer by the thermal-oxidation treatment.

Abstract: An improved means and method for isolating semiconductor devices on a semiconductor substrate, comprising a shallow region formed between the semiconductor substrate and an epitaxial layer of each device, and between a buried layer of each device and an isolation region separating adjacent devices. The shallow region has conductivity type opposite to that of the semiconductor substrate and higher impurity concentration than that of the epitaxial layer.