Abstract: Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.

Abstract: Embodiments described herein relate to a lower side wall for use in a processing chamber. a lower side wall for use in a processing chamber is disclosed herein. The lower side wall includes an inner circumference, an outer circumference, a top surface, a plurality of flanges, and a first concave portion. The outer circumference is concentric with the inner circumference. The plurality of flanges project from the inner circumference. The first concave portion includes a plurality of grooves arranged along a circumferential direction of the lower side wall. Each groove has an arc shape such that the plurality of grooves concentrate a gas when the gas contacts the plurality of grooves.

Abstract: Disclosed herein is a heat shield assembly for a processing chamber. The processing chamber includes a body having sidewalls, a bottom and a lid that define an interior volume. The heat shield assembly is disposed in the interior volume, and includes a heat shield and a preheat member. The preheat member includes an inner circumference, and is positioned below the heat shield. A susceptor is disposed in the interior volume and configured to support a substrate, and is positioned within the inner circumference of the preheat member. An opening is positioned between the susceptor and the preheat member. A first section of the opening is proximate to a gas inlet, and is covered by the heat shield. A second section of the annular opening is proximate a gas outlet, and is not covered by the heat shield member.

Abstract: An epitaxial deposition chamber having an upper cone for controlling air flow above a dome in the chamber, such as a high growth rate epitaxy chamber, is described herein. The upper cone has first and second components separated by two or more gaps in the chamber, each component having a partial cylindrical region having a first concave inner surface, a first convex outer surface, and a fixed radius of curvature of the first concave inner surface, and a partial conical region extending from the partial cylindrical region, the partial conical region having a second concave inner surface, a second convex outer surface, and a varying radius of curvature of the second concave inner surface, wherein the second concave inner surface extends from the partial cylindrical region to a second radius of curvature less than the fixed radius of curvature.

Abstract: Disclosed herein is a heat shield assembly for a processing chamber. The processing chamber includes a body having sidewalls, a bottom and a lid that define an interior volume. The heat shield assembly is disposed in the interior volume, and includes a heat shield and a preheat member. The preheat member includes an inner circumference, and is positioned below the heat shield. A susceptor is disposed in the interior volume and configured to support a substrate, and is positioned within the inner circumference of the preheat member. An opening is positioned between the susceptor and the preheat member. A first section of the opening is proximate to a gas inlet, and is covered by the heat shield. A second section of the annular opening is proximate a gas outlet, and is not covered by the heat shield member.

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a support shaft assembly. The support shaft assembly has a ring shaped susceptor, a disc shaped heat plate, and a support shaft system. The support shaft system supports the susceptor and the heat plate, such that the susceptor is supported above the heat plate defining a gap between the heat plate and the susceptor. In another embodiment, the heat plate includes a plurality of grooves and the susceptor includes a plurality of fins. The fins are configured to sit within the grooves such that the susceptor is supported above the heat plate, defining a gap between the heat plate and the susceptor. In another embodiment, a method of processing a substrate in the aforementioned embodiments is disclosed herein.

Abstract: Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.

Abstract: An epitaxial deposition chamber having an upper cone for controlling air flow above a dome in the chamber, such as a high growth rate epitaxy chamber, is described herein. The upper cone has first and second components separated by two or more gaps in the chamber, each component having a partial cylindrical region having a first concave inner surface, a first convex outer surface, and a fixed radius of curvature of the first concave inner surface, and a partial conical region extending from the partial cylindrical region, the partial conical region having a second concave inner surface, a second convex outer surface, and a varying radius of curvature of the second concave inner surface, wherein the second concave inner surface extends from the partial cylindrical region to a second radius of curvature less than the fixed radius of curvature.

Abstract: An epitaxial growth device comprises a reaction chamber defined by a substrate setting portion, a ceiling board and a sidewall portion, a heating member and reactant gas-introduction member. The ceiling board is fixed to a ring-like support portion having a through-hole as viewed from above. A diameter of the through-hole becomes reduced gradually toward a substrate-side. The ceiling board is fixed to an end portion of the substrate-side of the through-hole.

Abstract: An epitaxial deposition chamber having an upper cone for controlling air flow above a dome in the chamber, such as a high growth rate epitaxy chamber, is described herein. The upper cone has first and second components separated by two or more gaps in the chamber, each component having a partial cylindrical region having a first concave inner surface, a first convex outer surface, and a fixed radius of curvature of the first concave inner surface, and a partial conical region extending from the partial cylindrical region, the partial conical region having a second concave inner surface, a second convex outer surface, and a varying radius of curvature of the second concave inner surface, wherein the second concave inner surface extends from the partial cylindrical region to a second radius of curvature less than the fixed radius of curvature.

Abstract: Embodiments described herein relate to a lower side wall for use in a processing chamber. a lower side wall for use in a processing chamber is disclosed herein. The lower side wall includes an inner circumference, an outer circumference, a top surface, a plurality of flanges, and a first concave portion. The outer circumference is concentric with the inner circumference. The plurality of flanges project from the inner circumference. The first concave portion includes a plurality of grooves arranged along a circumferential direction of the lower side wall. Each groove has an arc shape such that the plurality of grooves concentrate a gas when the gas contacts the plurality of grooves.

Abstract: In one embodiment, a gas introduction insert includes a gas distribution assembly having a body, a plurality of gas injection channels formed within the gas distribution assembly, at least a portion of the plurality of gas injection channels being adjacent to a blind channel formed in the gas distribution assembly, and a rectification plate bounding one side of the plurality of gas injection channels and the blind channel, the rectification plate including a non-perforated portion corresponding to the position of the blind channel.

Abstract: Embodiments described herein relate to a lower side wall for use in a processing chamber. In one embodiment, the lower side wall includes an annular body. The annular body as an inner circumference, an outer circumference, a plurality of flanges projecting from the inner circumference, and a first concave portion formed in the outer circumference. The outer circumference has a plurality of grooves arranged in a circumferential direction of the lower side wall. In another embodiment, the annular body further includes a top surface having a mounting surface formed thereon and a second concave portion formed opposite the first concave portion. The second concave portion has a plurality of purge holes. In another embodiment, each groove of the plurality of grooves formed in the first concave portion has an arc shape.

Abstract: An epitaxial deposition chamber having an upper cone for controlling air flow above a dome in the chamber, such as a high growth rate epitaxy chamber, is described herein. The upper cone has first and second components separated by two or more gaps in the chamber, each component having a partial cylindrical region having a first concave inner surface, a first convex outer surface, and a fixed radius of curvature of the first concave inner surface, and a partial conical region extending from the partial cylindrical region, the partial conical region having a second concave inner surface, a second convex outer surface, and a varying radius of curvature of the second concave inner surface, wherein the second concave inner surface extends from the partial cylindrical region to a second radius of curvature less than the fixed radius of curvature.

Abstract: A heat shield assembly for an epitaxy chamber is described herein. The heat shield assembly has a heat shield member and a preheat member. The heat shield member is disposed on the preheat member. The heat shield member has a cutout portion that exposes a portion of the preheat member. The preheat member has a recessed portion to receive the heat shield member.

Abstract: A ceiling portion for use in a processing apparatus and an epitaxial growth apparatus having the ceiling portion are disclosed herein. In one embodiment the ceiling portion includes a ring shaped support and a ceiling plate. The ring shaped support includes an inner surface having a first slope portion decreasing from a top surface of the ring shaped support towards a center of the ring shaped support and a protrusion, protruding from the inner surface, having a second slope portion decreasing in a protruding direction towards the center of the ring shaped support. The ceiling plate is coupled to the support. In another embodiment, the first slope portion and the second slope portion meet at a point, wherein an angle formed by the first slope portion and the second slope portion is less than 90 degrees.

Abstract: A liquefier system includes: a feed line configured to feed a raw material gas from a raw material supply source such that a pressure of the raw material gas in a predetermined portion of the feed line is kept higher than or equal to a predetermined pressure; a cooling medium circulation line configured to cause a cooling medium to circulate; a static pressure gas bearing configured to be supplied with the gas that has a pressure higher than or equal to the predetermined pressure and to rotatably support a rotating shaft of an expansion turbine; and a bearing supply line configured to connect the predetermined portion of the feed line and a gas inlet of the static pressure gas bearing, such that the gas is supplied to the static pressure gas bearing.

Abstract: A heat shield assembly for an epitaxy chamber is described herein. The heat shield assembly has a heat shield member and a preheat member. The heat shield member is disposed on the preheat member. The heat shield member has a cutout portion that exposes a portion of the preheat member. The preheat member has a recessed portion to receive the heat shield member.

Abstract: Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.

Abstract: Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.