Abstract: A light source includes a control unit that controls currents injected into at least one light emitting region and a light emission spectrum conversion region. The at least one light emitting region includes a first light emitting region and a second light emitting region different from the first light emitting region, light that is emitted from the first light emitting region and passes through the light emission spectrum conversion region is combined with the light that is emitted from the first or second light emitting region and does not pass through the light emission spectrum conversion region. The control unit controls the currents injected into the light emission spectrum conversion region and the first light emitting region so that the current density of the light emission spectrum conversion region is smaller than the current density of the first light emitting region.

Abstract: A surface emitting laser according to the present invention includes a lower reflector, a first spacer layer, an active layer, a second spacer layer composed of a semiconductor material, a gap section formed of at least one of vacuum and gas, and an upper reflector in the written order, and also includes a control mechanism that changes a distance between an interface between the second spacer layer and the gap section and an interface between the upper reflector and the gap section. An optical path length neff×d extending from an interface between the lower reflector and the first spacer layer to an interface between the second spacer layer and the gap section satisfies a predetermined relationship.

Abstract: The semiconductor light emitting element, includes a multiple quantum well active layer including a first quantum well and a second quantum well having well widths different from each other. Well layers of the first quantum well and the second quantum well are formed of InxGa1-xAs. A well width Lw and a well layer In content Inx(Lw) of the first quantum well, and a well width Ln and a well layer In content Inx(Ln) of the second quantum well satisfy the following Expression (1): 0.0631(Ln/Lw)2?0.134(Ln/Lw)+0.0712<Inx(Ln)?Inx(Lw)<0.0068(Ln/Lw)2?0.1995(Ln/Lw)+0.192??(1).

Abstract: The present invention provides an optical semiconductor device which can make a wavelength band of emitted light wider than that of a conventional optical semiconductor device. The optical semiconductor device includes: an active layer including a multiple quantum well structure; and at least one electrode pair for injecting an electric current into the active layer, wherein the multiple quantum well structure has a first quantum well and a second quantum well which is different from the first quantum well, and the first quantum well and the second quantum well are mutually different in at least two out of a composition of a well layer, a width of the well layer, and a composition of a barrier layer.

Abstract: Provided is a surface-emitting laser including a periodic gain structure, which is capable of improving uniformity of carrier injection into multiple active regions and carrier confinement, to thereby improve laser characteristics. The surface-emitting laser includes: a first DBR layer; a first cladding layer; multiple active regions each including a multiple quantum well structure; an interbarrier layer disposed between the multiple active regions; a second cladding layer; a current confinement structure; and a second DBR layer. The multiple active regions are disposed at multiple positions at which light intensity of a gain region is maximum, and the interbarrier layer has an energy level at a bottom of a conduction band thereof which is higher than an energy level at a bottom of a conduction band of a barrier layer of the multiple quantum well structure of each of the multiple active regions, which are disposed at the multiple positions.

Abstract: Provided is an LED device which is capable of reducing the emission size without changing the size of an LED and is capable of switching the emission size arbitrarily. The LED device includes, on a substrate, a carrier control layer, a lower current confinement layer, an active layer, and an upper current confinement layer. A p-type electrode is provided on the upper current confinement layer. Two n-type electrodes are arranged on the carrier control layer so as to dispose the p-type electrode between the two n-type electrodes in an in-plane direction of the substrate.

Abstract: A surface emitting laser according to the present invention includes a lower reflector, a first spacer layer, an active layer, a second spacer layer composed of a semiconductor material, a gap section formed of at least one of vacuum and gas, and an upper reflector in the written order, and also includes a control mechanism that changes a distance between an interface between the second spacer layer and the gap section and an interface between the upper reflector and the gap section. An optical path length neff×d extending from an interface between the lower reflector and the first spacer layer to an interface between the second spacer layer and the gap section satisfies a predetermined relationship.

Abstract: A light source includes a control unit that controls currents injected into at least one light emitting region and a light emission spectrum conversion region. The at least one light emitting region includes a first light emitting region and a second light emitting region different from the first light emitting region, light that is emitted from the first light emitting region and passes through the light emission spectrum conversion region is combined with the light that is emitted from the first or second light emitting region and does not pass through the light emission spectrum conversion region. The control unit controls the currents injected into the light emission spectrum conversion region and the first light emitting region so that the current density of the light emission spectrum conversion region is smaller than the current density of the first light emitting region.

Abstract: A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (1010), a compound semiconductor multilayer film (1020), an insulating film (2010), and a semiconductor substrate (2000) on a compound semiconductor substrate (1000), and having a first groove (2005) which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove (1025) which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.

Abstract: A surface emitting laser is provided which can control a beam shape and can provide higher efficiency and higher power. The surface emitting laser includes a gain region that is provided between a first semiconductor multilayer film reflection mirror and a second semiconductor multilayer film reflection mirror, which are arranged so as to oppose to each other, and that has a first active layer and a second active layer. The surface emitting laser has a current constriction layer for constricting an electric current which is injected into the first active layer and the second active layer. The first active layer and the second active layer have different active layer structures from each other.

Abstract: Provided is an LED device which is capable of reducing the emission size without changing the size of an LED and is capable of switching the emission size arbitrarily. The LED device includes, on a substrate, a carrier control layer, a lower current confinement layer, an active layer, and an upper current confinement layer. A p-type electrode is provided on the upper current confinement layer. Two n-type electrodes are arranged on the carrier control layer so as to dispose the p-type electrode between the two n-type electrodes in an in-plane direction of the substrate.

Abstract: A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (1010), a compound semiconductor multilayer film (1020), an insulating film (2010), and a semiconductor substrate (2000) on a compound semiconductor substrate (1000), and having a first groove (2005) which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove (1025) which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.

Abstract: An image forming apparatus capable of enhancing the accuracy of the scanning position of a laser beam to thereby obtain a more precise image. Optical sensors detect reflected light from a surface of a photosensitive drum. During image formation, the apparatus detects the scanning speed of the laser beam in a main scanning direction based on detection signals from the respective optical sensors in each of divisional sections of an image forming area in the main scanning direction. The apparatus corrects magnification of the image in the main scanning direction, based on results of detection of the scanning speed of the laser beam in the main scanning direction.

Abstract: A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (1010), a compound semiconductor multilayer film (1020), an insulating film (2010), and a semiconductor substrate (2000) on a compound semiconductor substrate (1000), and having a first groove (2005) which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove (1025) which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.

Abstract: To provide a surface emitting laser having a structure that can suppress the oscillation of a high-order transverse mode. In the surface emitting laser, a plurality of semiconductor layers including a lower DBR, an upper DBR, an active layer interposed therebetween, and a current confinement layer for confining a current injected to the active layer are stacked on a substrate, and a barrier structure limits the migration of a majority carrier, that has passed through a current unconfining portion, in an electric field application direction; the barrier structure is provided between the current confinement layer and the active layer so that an oscillation of a high-order transverse mode is suppressed by the barrier structure promoting the diffusion of the majority carrier in an in-plane direction of the barrier structure.

Abstract: A surface emitting laser is provided which can control a beam shape and can provide higher efficiency and higher power. The surface emitting laser includes a gain region that is provided between a first semiconductor multilayer film reflection mirror and a second semiconductor multilayer film reflection mirror, which are arranged so as to oppose to each other, and that has a first active layer and a second active layer. The surface emitting laser has a current constriction layer for constricting an electric current which is injected into the first active layer and the second active layer. The first active layer and the second active layer have different active layer structures from each other.

Abstract: Provided is a surface-emitting laser including a periodic gain structure, which is capable of improving uniformity of carrier injection into multiple active regions and carrier confinement, to thereby improve laser characteristics. The surface-emitting laser includes: a first DBR layer; a first cladding layer; multiple active regions each including a multiple quantum well structure; an interbarrier layer disposed between the multiple active regions; a second cladding layer; a current confinement structure; and a second DBR layer. The multiple active regions are disposed at multiple positions at which light intensity of a gain region is maximum, and the interbarrier layer has an energy level at a bottom of a conduction band thereof which is higher than an energy level at a bottom of a conduction band of a barrier layer of the multiple quantum well structure of each of the multiple active regions, which are disposed at the multiple positions.

Abstract: To provide a surface emitting laser having a structure that can suppress the oscillation of a high-order transverse mode. In the surface emitting laser, a plurality of semiconductor layers including a lower DBR, an upper DBR, an active layer interposed therebetween, and a current confinement layer for confining a current injected to the active layer are stacked on a substrate, and a barrier structure limits the migration of a majority carrier, that has passed through a current unconfining portion, in an electric field application direction; the barrier structure is provided between the current confinement layer and the active layer so that an oscillation of a high-order transverse mode is suppressed by the barrier structure promoting the diffusion of the majority carrier in an in-plane direction of the barrier structure.

Abstract: An image forming apparatus capable of enhancing the accuracy of the scanning position of a laser beam to thereby obtain a more precise image. Optical sensors detect reflected light from a surface of a photosensitive drum. During image formation, the apparatus detects the scanning speed of the laser beam in a main scanning direction based on detection signals from the respective optical sensors in each of divisional sections of an image forming area in the main scanning direction. The apparatus corrects magnification of the image in the main scanning direction, based on results of detection of the scanning speed of the laser beam in the main scanning direction.

Abstract: Provided is a surface emitting laser which can maintain a fundamental transverse mode to obtain higher power while higher-order transverse mode oscillations are suppressed, and a method of manufacturing the surface emitting laser. The surface emitting laser includes: an aperture portion to be a path for injecting a current to an active layer; a current confinement region provided in the vicinity of the aperture portion; and a current injection region which is provided on an opposite side to a light output side with respect to the active layer therebetween, in which a current injection path in the current injection region has a smaller diameter than the aperture portion.